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BC490AG

Onsemi

BC490AG by Onsemi

BC490AG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for switching applications due to its single configuration and cylindrical package style with through-hole terminals. Operating temp up to 150 °C makes it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 5,000 parts In-Stock

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Digiode

USA . 1,446 parts In-Stock

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Vyrian

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Component Stockers USA

USA . 652 parts In-Stock

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Kulean Microsystems

USA . 7,557 parts In-Stock

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TANS Electronics

Latvia . 7,117 parts In-Stock

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Problanco Electronics

Mexico . 5,403 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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SupplyDigital Components

Austria . 2,849 parts In-Stock

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Corphita

USA . 2,412 parts In-Stock

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Northwest PG Solutions

USA . 1,134 parts In-Stock

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Corohmni

South Africa . 356 parts In-Stock

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UHIMA Technologies

Türkiye . 171 parts In-Stock

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Native Components

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Overview

Enhance your electronic projects with the BC490AG by Onsemi. This Small Signal Bipolar Junction Transistor (BJT) offers superior quality and reliability, thanks to its manufacturer's reputation for excellence. Ideal for switching applications, this PNP transistor provides a seamless performance that exceeds expectations. Its compact design and high operating temperature make it versatile for various projects. Trust in the BC490AG to deliver exceptional results and bring your creations to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy incorporation into circuits where PNP transistors are required, providing compatibility and flexibility for different design requirements.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making it easier to integrate this transistor into a variety of electronic devices and systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits, enabling fast and reliable switching operations.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation of 1.5 W, this transistor can handle significant power levels without overheating, ensuring reliable performance in demanding conditions.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80 V allows for the safe operation of the transistor in applications where higher voltages may be present, enhancing overall reliability.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150 MHz indicates fast switching speeds and high-frequency performance, making this transistor suitable for applications requiring swift signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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