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AR0238IRSH12SUD20

Onsemi

AR0238IRSH12SUD20 by Onsemi

The Onsemi AR0238IRSH12SUD20 is a CMOS image sensor with 1928x1088 pixels, 3x3 um pixel size, and 96 dB dynamic range. It operates at -30 to 85 °C with a supply voltage range of 1.7-1.95 V. Ideal for applications requiring high-resolution imaging at up to 60 fps such as surveillance cameras and industrial machine vision systems.

Median Price

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Vyrian

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AZTECH Wire

Italy . 653 parts In-Stock

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Native Components

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Northwest PG Solutions

USA . 919 parts In-Stock

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TANS Electronics

Latvia . 5,468 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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UHIMA Technologies

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SupplyDigital Components

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Overview

Capture every moment in stunning detail with the AR0238IRSH12SUD20 by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-quality products that excel in various applications. This CMOS image sensor boasts a 3x3 pixel size and a 96 dB dynamic range, providing crystal-clear images with exceptional clarity. From security cameras to automotive systems, this sensor offers unmatched value, benefits, and advantages to customers seeking high-performance imaging solutions. Elevate your projects with the AR0238IRSH12SUD20 and experience the difference that Onsemi quality can make.

Feature Benefit Bullets

Pixel Size (um): 3X3

The small pixel size allows for high resolution and detailed image capture, making this product ideal for applications where image quality is crucial.

Maximum Supply Voltage: 1.95 V

With a high maximum supply voltage, this image sensor can operate efficiently and reliably even under varying voltage conditions.

Master Clock: 48 MHz

The high master clock frequency of 48 MHz enables fast and accurate image processing, making this sensor suitable for high-speed imaging applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and excellent noise performance, making it a versatile choice for various imaging applications.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage requirement allows for flexibility in power source selection and energy-efficient operation of this image sensor.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this image sensor can withstand elevated temperatures, making it suitable for use in harsh environmental conditions.

Horizontal Pixel: 1928

A high horizontal pixel count of 1928 contributes to the sensor's ability to capture detailed and wide-angle images, making it an excellent choice for surveillance and monitoring applications.

Output Range: -22-22mA

The broad output range of -22-22mA allows for flexible signal transmission and compatibility with a variety of output devices, enhancing the versatility of this image sensor.

Output Type: DIGITAL CURRENT

The digital current output type simplifies signal processing and integration with digital systems, offering reliable and accurate data transmission for optimal image capture.

Minimum Operating Temperature: -30 °C

With a low minimum operating temperature of -30 °C, this image sensor can function in cold environments, expanding its usability in a wide range of applications.

Maximum Operating Current: 130 mA

The moderate maximum operating current requirement of 130 mA ensures efficient power usage and extends battery life, making this image sensor a practical choice for portable devices.

Dynamic Range: 96 dB

The high dynamic range of 96 dB allows for accurate and vivid image representation with details in both bright and dark areas, providing excellent image quality and clarity.

Vertical Pixel: 1088

The vertical pixel count of 1088 contributes to the sensor's ability to capture clear and detailed images with precise vertical resolution, enhancing its performance in vertical-oriented applications.

Optical Format (inch): 1/2.7

The optical format of 1/2.7 inch offers a good balance between sensor size and imaging performance, making this product suitable for compact devices without compromising image quality.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with external devices, enabling easy integration of this image sensor into various systems for seamless data transfer.

Frame Rate: 60 fps

With a high frame rate of 60 frames per second, this image sensor can capture fast-moving subjects with smooth motion and minimal blurring, making it ideal for dynamic imaging applications.

Array Type: FRAME

The frame array type offers a structured arrangement of pixels for efficient data capture and processing, resulting in accurate and consistent image output from this sensor.

Technical Specifications

Image Sensors AR0238IRSH12SUD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8V NOMINAL ANALOG SUPPLY VOLTAGE

Array Type:

FRAME

Dynamic Range:

96 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

Master Clock:

48 MHz

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1088

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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