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MTFC64GAZAQHD-AIT

Micron Technology

MTFC64GAZAQHD-AIT by Micron Technology

Micron Technology's MTFC64GAZAQHD-AIT is a 64GX8 NAND flash memory with 68719476736 words capacity. Operating at 200 MHz, it has a low profile of 0.9 mm and supports industrial temperature grade applications. With a package style of GRID ARRAY, it offers high memory density and synchronous operation for various electronic devices.

Median Price

$57.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 635 parts In-Stock

1+ parts

$54.950

100+ parts

-

1k+ parts

-

10k+ parts

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635

$54.950

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-

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Farnell

UK . 703 parts In-Stock

1+ parts

$59.050

100+ parts

-

1k+ parts

-

10k+ parts

-

703

$59.050

-

-

-

Element14

Singapore . 703 parts In-Stock

1+ parts

$104.620

100+ parts

-

1k+ parts

-

10k+ parts

-

703

$104.620

-

-

-

Verical

USA . 733 parts In-Stock

1+ parts

-

100+ parts

$27.072

1k+ parts

$27.072

10k+ parts

$27.072

733

-

$27.072

$27.072

$27.072

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,049 parts In-Stock

1+ parts

$20.644

100+ parts

-

1k+ parts

-

10k+ parts

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2,049

$20.644

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-

-

Vyrian

USA . 7,789 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,789

-

-

-

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Chip Stock

USA . 5,195 parts In-Stock

1+ parts

-

100+ parts

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5,195

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-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,244 parts In-Stock

1+ parts

$19.557

100+ parts

-

1k+ parts

-

10k+ parts

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1,244

$19.557

-

-

-

Continental Prestige Electronics

USA . 730 parts In-Stock

1+ parts

$27.310

100+ parts

-

1k+ parts

-

10k+ parts

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730

$27.310

-

-

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Ampacity Inc.

Singapore . 373 parts In-Stock

1+ parts

$40.200

100+ parts

-

1k+ parts

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10k+ parts

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373

$40.200

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,000

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-

-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,000

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Overview

Unlock the power of reliable and high-quality flash memory with the MTFC64GAZAQHD-AIT by Micron Technology. Designed for industrial applications, this NAND type memory card offers a seamless experience with its synchronous operation and fast clock frequency of up to 200 MHz. With a compact package style and a wide operating temperature range, this memory card is perfect for a variety of industrial settings. Trust in Micron Technology's expertise to deliver top-notch performance and durability, making the MTFC64GAZAQHD-AIT an essential component for your next project. Elevate your system's capabilities with this innovative flash memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material is durable and can protect the flash memory from external elements, making it a reliable choice.

Nominal Supply Voltage (Vsup): 1.8V

The low nominal supply voltage of 1.8V helps in reducing power consumption, making the flash memory energy-efficient.

Maximum Clock Frequency (fCLK): 200 MHz

With a maximum clock frequency of 200 MHz, this flash memory can operate at high speeds, making it suitable for applications that require fast data transfer.

Memory Density: 549755813888 bit

The high memory density of 549755813888 bits allows for storing a large amount of data in a compact form factor, making this flash memory ideal for applications with high storage requirements.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures that data is transferred in sync with the clock signal, improving overall performance and reliability of the flash memory.

Technical Specifications

Flash Memory MTFC64GAZAQHD-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC64GAZAQHD-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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