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N25Q512A13GSF40G

Micron Technology

N25Q512A13GSF40G by Micron Technology

N25Q512A13GSF40G by Micron Technology is a NOR flash memory with 512Mx1 organization, operating at 108MHz clock frequency. It features hardware/software write protection and offers 100,000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage.

Median Price

$8.349

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$8.349

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10

$8.349

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Vyrian

USA . 4,802 parts In-Stock

1+ parts

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4,802

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Chip Stock

USA . 4,000 parts In-Stock

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4,000

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Sternenhof Electronics

Switzerland . 1,986 parts In-Stock

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1,986

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Digiode

USA . 1,339 parts In-Stock

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1,339

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Prism Electronics

USA . 1 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 561 parts In-Stock

1+ parts

$5.000

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561

$5.000

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Advanced Electronics

New Zealand . 15 parts In-Stock

1+ parts

$6.435

100+ parts

$5.856

1k+ parts

$5.277

10k+ parts

-

15

$6.435

$5.856

$5.277

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Continental Prestige Electronics

USA . 494 parts In-Stock

1+ parts

$8.349

100+ parts

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$8.182

494

$8.349

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$8.182

AZTECH Wire

Italy . 538 parts In-Stock

1+ parts

$19.073

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538

$19.073

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Perfect Parts

USA . 10,840 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,492 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Argo Parts USA

USA . 1,566 parts In-Stock

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Kepictronics

USA . 1,225 parts In-Stock

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Corphita

USA . 338 parts In-Stock

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338

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Microchip USA

USA . 336 parts In-Stock

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336

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Overview

Unlock the power of reliable and high-performance flash memory technology with the N25Q512A13GSF40G by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-notch quality and innovation in every product. This flash memory device is perfect for a wide range of applications, providing fast and efficient data storage solutions. With its exceptional endurance, ease of use, and low power consumption, customers can trust that the N25Q512A13GSF40G will meet their needs while offering excellent value and performance. Experience the difference with Micron Technology's cutting-edge flash memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration of the flash memory into electronic circuits or devices.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures data transfers are synchronized with the clock signal, enhancing overall performance and reliability.

Maximum Clock Frequency: 108 MHz

The high maximum clock frequency allows for fast data access and transfer speeds, making the flash memory suitable for high-performance applications.

Memory Density: 536870912 bit

With a high memory density, this flash memory product offers ample storage capacity for storing large amounts of data efficiently.

Endurance: 100000 Write/Erase Cycles

The high endurance level of 100,000 write/erase cycles ensures the longevity and reliability of the flash memory for frequent data read/write operations.

Technical Specifications

Flash Memory N25Q512A13GSF40G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0005 Amp

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q512A13GSF40G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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