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N25Q00AA13GSF40G

Micron Technology

N25Q00AA13GSF40G by Micron Technology

Micron Technology's N25Q00AA13GSF40G is a NOR type Flash Memory with 1GX1 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at -40 to 85 °C, has 100000 Write/Erase cycles endurance, and is ideal for industrial applications requiring high-speed data storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Avnet

USA . 2,594 parts In-Stock

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Vyrian

USA . 6,430 parts In-Stock

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Digiode

USA . 2,238 parts In-Stock

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Chip Stock

USA . 524 parts In-Stock

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Cyclops Electronics Ltd

UK . 414 parts In-Stock

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Nova Conductors

Japan . 80 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5 parts In-Stock

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PC Components Company LLC

USA . 1 parts In-Stock

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Bristol Electronics

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Ampacity Inc.

Singapore . 279 parts In-Stock

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$8.000

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AZTECH Wire

Italy . 484 parts In-Stock

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$15.740

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QUARKTWIN TECHNOLOGY LTD

USA . 25,484 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 6,025 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

Canada . 2,250 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Futuretech Components

Singapore . 720 parts In-Stock

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Kepictronics

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Corphita

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Benley Electronics

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Microchip USA

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Cyclops Electronics Ltd (Excess)

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iodParts Technologies Inc.

India . 1 parts In-Stock

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Overview

Experience top-notch quality and reliability with Micron Technology's N25Q00AA13GSF40G Flash Memory. This cutting-edge product offers endless possibilities in various applications, providing customers with exceptional value and benefits. With a focus on performance and efficiency, this Flash Memory is designed to meet your needs with ease. Trust in Micron Technology for innovative solutions that deliver unmatched advantages in the ever-evolving world of technology. Step into the future with the N25Q00AA13GSF40G and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and improved overall performance.

Maximum Clock Frequency (fCLK): 108 MHz

High clock frequency enables quick access to data, making this flash memory ideal for high-speed applications.

Memory Density: 1073741824 bit

With a high memory density, this flash memory can store a large amount of data efficiently.

Endurance: 100000 Write/Erase Cycles

The high endurance rate means this flash memory can handle frequent read and write operations without degradation.

Technical Specifications

Flash Memory N25Q00AA13GSF40G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.41

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q00AA13GSF40G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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