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MT29F128G08AUCBBH3-12IT:B

Micron Technology

MT29F128G08AUCBBH3-12IT:B by Micron Technology

MT29F128G08AUCBBH3-12IT:B by Micron Technology is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 3.3V. It features synchronous mode, industrial temperature grade, and parallel interface. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,981 parts In-Stock

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5,981

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Digiode

USA . 305 parts In-Stock

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305

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Nova Conductors

Japan . 200 parts In-Stock

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200

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SPM Sales

USA . 110 parts In-Stock

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110

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 444 parts In-Stock

1+ parts

$4.698

100+ parts

-

1k+ parts

$4.510

10k+ parts

$4.510

444

$4.698

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$4.510

$4.510

AZTECH Wire

Italy . 330 parts In-Stock

1+ parts

$12.046

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330

$12.046

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Ampacity Inc.

Singapore . 1,448 parts In-Stock

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$27.000

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1,448

$27.000

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Corphita

USA . 199 parts In-Stock

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199

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Microchip USA

USA . 132 parts In-Stock

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132

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Overview

Unlock the power of reliable and high-performance flash memory with Micron Technology's MT29F128G08AUCBBH3-12IT:B. Designed for industrial applications, this top-of-the-line flash memory offers unparalleled quality and performance. With a wide operating temperature range and low profile package style, this flash memory is perfect for a variety of demanding environments. Trust in Micron Technology's reputation for excellence and invest in the MT29F128G08AUCBBH3-12IT:B to ensure seamless operations and unmatched reliability for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

With the ability to be surface mounted, this flash memory can be easily integrated into a variety of electronic devices for efficient use of space.

Package Shape: RECTANGULAR

The rectangular shape allows for a compact design, making it easy to fit into tight spaces within electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient communication and data transfer, resulting in faster performance.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage ensures compatibility with a wide range of devices, making this flash memory a versatile choice.

No. of Terminals: 100

With 100 terminals, this flash memory offers ample connectivity options for seamless integration into electronic systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The grid array, low profile package style offers a space-saving design while maintaining reliability and performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand a wide range of environmental conditions.

Organization: 16GX8

The 16GX8 organization provides a high level of memory organization and efficiency, making it ideal for storing and accessing large amounts of data.

Minimum Operating Temperature: -40 °C

The -40°C minimum operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The tin, silver, and copper terminal finish provides excellent conductivity and corrosion resistance for long-lasting performance.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure connections, ensuring a reliable electrical connection within electronic devices.

Maximum Seated Height: 1.4 mm

The low maximum seated height makes this flash memory suitable for space-constrained applications where height is a critical factor.

Width: 12 mm

The 12mm width offers a compact form factor, making this flash memory easy to integrate into various electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

With a minimum supply voltage of 2.7V, this flash memory is energy-efficient and suitable for battery-powered devices.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper soldering and reliability during the manufacturing process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this flash memory can withstand high-temperature soldering processes without damage.

Type: MLC NAND TYPE

The MLC NAND type offers high density and reliability, making this flash memory suitable for storing large amounts of data.

Length: 18 mm

The 18mm length provides a compact size for easy integration into various electronic devices without sacrificing performance.

Programming Voltage (V): 2.7

The 2.7V programming voltage ensures efficient and reliable data programming for optimal performance.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh environmental conditions, making this flash memory ideal for industrial applications.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed performance, making this flash memory energy-efficient and reliable.

Parallel or Serial: PARALLEL

The parallel interface allows for high-speed data transfer and efficient communication with other components in a system.

Terminal Form: BALL

The ball terminal form provides a reliable and secure connection, ensuring consistent electrical contact in various electronic devices.

No. of Words: 17179869184 words

With over 17 billion words, this flash memory offers a high storage capacity for storing a vast amount of data.

Memory Width: 8

The 8-bit memory width provides efficient data transfer and storage capabilities, making this flash memory suitable for diverse applications.

Terminal Pitch: 1 mm

The 1mm terminal pitch allows for easy and accurate connections, ensuring proper alignment and reliable electrical contact.

No. of Words Code: 16G

The 16G word code provides a standardized format for organizing and accessing data efficiently within the flash memory.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this flash memory can safely operate within a wide voltage range, enhancing compatibility with different devices.

Memory Density: 137438953472 bit

With a memory density of over 137 billion bits, this flash memory offers a high-capacity storage solution for demanding applications.

Memory IC Type: FLASH

Being of flash memory IC type ensures fast read and write speeds, making it suitable for high-performance data storage and retrieval requirements.

Technical Specifications

Flash Memory MT29F128G08AUCBBH3-12IT:B attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

MLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F128G08AUCBBH3-12IT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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