Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTB60N06LT4
Onsemi
NTB60N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
LOGIC LEVEL COMPATIBLE
454 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
60 A
.016 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e0
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
N-CHANNEL
150 W
180 A
Not Qualified
FET General Purpose Power
YES
Tin/Lead (Sn/Pb)
GULL WING
SINGLE
30
SWITCHING
SILICON
NTB60N06L
NTB60N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.016 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power circuit designs requiring efficient switching capabilities.
TIN LEAD
NTP60N06L
NTP60N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 150W and can withstand temperatures up to 175 °C.
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
NO
THROUGH-HOLE
NTP60N06
NTP60N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS. It's used for SWITCHING applications due to its 150W Pdiss, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.
.014 ohm
NTP75N03L09
NTP75N03L09 by Onsemi is a Power FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(on). It's an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with THROUGH-HOLE terminals, suitable for ENHANCEMENT MODE operation up to 150 °C.
AVALANCHE RATED
1500 mJ
30 V
75 A
.008 ohm
150 Cel
225 A
SPB80N06S2L-11
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 80 A; JEDEC-95 Code: TO-263AB;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
280 mJ
55 V
80 A
.0147 ohm
TO-263AB
e3
320 A
MATTE TIN
SPP80N06S2L-11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
SPD100N03S2L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: MATTE TIN;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
325 mJ
100 A
.0063 ohm
TO-252
R-PSSO-G4
4
400 A
SPD35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
245 mJ
100 V
35 A
.044 ohm
260
140 A
SPB35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 2; No. of Elements: 1;
220
SPP35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 35 A; Terminal Finish: MATTE TIN;
STD150NH02LT4
STMicroelectronics
STD150NH02LT4 by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 150 A, breakdown voltage of 24 V, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
LOW THRESHOLD
500 mJ
24 V
150 A
.0035 ohm
TO-252AA
600 A
STP10NK70Z
STP10NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 34A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
350 mJ
700 V
8.6 A
.85 ohm
34 A
STP17NK40Z
STP17NK40Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 400V breakdown voltage, 15A max drain current, and 150W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
450 mJ
400 V
15 A
.25 ohm
IPB03N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 960 mJ; No. of Terminals: 2;
960 mJ
25 V
.0041 ohm
385 A
IPP03N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 3; Transistor Element Material: SILICON;
.0044 ohm
STB32N65M5
STB32N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 96A IDM, and 0.119 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 150W.
AVALANCHE ENERGY RATED
650 mJ
650 V
24 A
.119 ohm
245
96 A
Matte Tin (Sn) - annealed
STI32N65M5
STI32N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 24A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-262AA
R-PSIP-T3
IN-LINE
STP32N65M5
STP32N65M5 from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a 650V breakdown voltage, 24A max drain current, and 150W power dissipation. Its robust design suits high-efficiency power management systems.
STW32N65M5
STW32N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 24A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247
Matte Tin (Sn)
STW70N10F4
STW70N10F4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 65 A and a breakdown voltage of 100 V. It offers low on-resistance at 0.0195 Ω and operates up to 175 °C. Its robust design ensures reliable performance in demanding environments.
120 mJ
65 A
.0195 ohm
260 A
NTB75N03L09G
NTB75N03L09G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS. Ideal for SWITCHING applications, it features a built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 150W at 150 °C.
TIN
NTP60N06G
NTP60N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its 150W Pdiss, 454mJ EAS rating, and -55 °C to +175°C operating temp range.
Tin (Sn)
40
NTP75N03L09G
NTP75N03L09G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
STP40NF12
STP40NF12 by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a max drain current of 40 A, breakdown voltage of 120 V, and power dissipation up to 150 W. Ideal for high-efficiency power management in various electronic devices.
150 mJ
120 V
40 A
.032 ohm
160 A
NTB60N06G
NTB60N06G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 180A and EAS of 454mJ, operating in ENHANCEMENT MODE. With a Drain Current of 60A and 0.014 ohm RDS(on), this MOSFET is suitable for high-power circuit designs.
NTP60N06LG
NTP60N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
STP8NK85Z
STP8NK85Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.7 A and a breakdown voltage of 850 V. It operates in enhancement mode with a power dissipation of up to 150 W. Ideal for high-voltage circuits, it ensures efficient performance in compact designs.
ISOLATED
850 V
6.7 A
1.4 ohm
26.7 A
IPB03N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Case Connection: DRAIN; Maximum Operating Temperature: 175 Cel;
580 mJ
.0039 ohm
IPP03N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 580 mJ; Terminal Position: SINGLE;
.0042 ohm
STP12NK60Z
STP12NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 150W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY
260 mJ
600 V
10 A
.64 ohm
NTB60N06LG
NTB60N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.016 ohm RDS(on), and 150W Pdiss. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power electronics.
NTB60N06LT4G
NTB60N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 180A, EAS of 454mJ, and ID of 60A. With a 0.016 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power circuits.
STP9NK80Z
STP9NK80Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 7.5 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 150 W. This robust transistor is suitable for high-voltage circuits.
800 V
7.5 A
1.2 ohm
30 A
NTB5405NG
The Onsemi NTB5405NG is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 116A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 280A Pulsed Drain Current, and 0.0058 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
800 mJ
40 V
116 A
.0058 ohm
280 A
STL23NM60ND
STL23NM60ND by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 78A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
700 mJ
19.5 A
.18 ohm
S-XDSO-N4
UNSPECIFIED
SQUARE
78 A
NO LEAD
DUAL
STP6N120K3
STP6N120K3 by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current and 2.4Ω Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
180 mJ
1200 V
5 A
6 A
2.4 ohm
20 A
STW6N120K3
STW6N120K3 by STMicroelectronics is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A IDM, 180mJ EAS, and 150W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150°C, making it suitable for high-power electronic systems.
STB70N10F4
STB70N10F4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 65 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
STP78N75F4
STP78N75F4 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 78 A, a breakdown voltage of 75 V, and operates at up to 175 °C. Its compact design suits various power management needs.
185 mJ
75 V
.011 ohm
312 A
STP90N55F4
STP90N55F4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 90 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
ULTRA LOW-ON RESISTANCE
290 mJ
90 A
360 A
FDB3652-F085
FDB3652-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 61A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low 0.016 ohm On Resistance.
182 mJ
61 A
9 A
FDB42AN15A0-F085
FDB42AN15A0-F085 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 35A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.042 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power requirements in automotive and industrial electronics.
78 mJ
150 V
.042 ohm
AEC-Q101
IPP057N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 80 V;
210 mJ
80 V
.0057 ohm
STB24N65M2
STB24N65M2 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 64A IDM, 150W Abs Power Dissipation, and 0.23 ohm Drain-Source On Resistance. Suitable for ENHANCEMENT MODE operation in various electronic devices.
16 A
.23 ohm
-55 Cel
NOT SPECIFIED
64 A
STH175N4F6-2AG
STH175N4F6-2AG by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 120 A and power dissipation of 150 W, operating up to 175 °C. Ideal for power management in various electronic devices.
120 A
STH175N4F6-6AG
STH175N4F6-6AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 120 A and power dissipation of 150 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
STP24N65M2
STP24N65M2 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 16A max drain current, and operates at temperatures up to 150 °C. Ideal for high-efficiency power management solutions.
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