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150 W Power Field Effect Transistors (FET) 102

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STH160N4LF6-2 by STMicroelectronics

STH160N4LF6-2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 120 A; No. of Elements: 1;

SINGLE

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

150 W

FET General Purpose Power

YES

NOT SPECIFIED

STP160N4LF6 by STMicroelectronics

STP160N4LF6

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 120 A;

SINGLE

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

150 W

FET General Purpose Power

NO

NOT SPECIFIED

SCT10N120 by STMicroelectronics

SCT10N120

STMicroelectronics

SCT10N120 by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage and 24A IDM. It is used for SWITCHING applications, featuring SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can handle up to 12A drain current.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

12 A

.69 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

R-PSFM-T3

1

3

ENHANCEMENT MODE

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

24 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

FDD9409L-F085 by Onsemi

FDD9409L-F085

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Terminal Position: SINGLE; Case Connection: DRAIN;

33.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

90 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

150 W

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

70 ns

47 ns

FDP4D5N10C by Onsemi

FDP4D5N10C

Onsemi

FDP4D5N10C by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 512A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 150W, this transistor has a turn on time of 126ns and turn off time of 90ns.

486 mJ

SINGLE WITH BUILT-IN DIODE

100 V

128 A

91 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

2.4 W

150 W

512 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

90 ns

126 ns

C3M0060065K by Wolfspeed

C3M0060065K

Wolfspeed

C3M0060065K by Wolfspeed is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 99A and 0.079 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE with a max power dissipation of 150W at temperatures ranging from -40 to 175 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

37 A

.079 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

99 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE