Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BUK9213-30A,118
NXP Semiconductors
BUK9213-30A,118 from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 55 A and power dissipation of 150 W, making it ideal for high-performance applications in automotive and industrial sectors. With a max operating temp of 175 °C, it ensures reliability in demanding environments.
SINGLE
55 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
175 Cel
N-CHANNEL
150 W
FET General Purpose Power
YES
Matte Tin (Sn)
2SK3700(F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 5 A; Maximum Drain Current (ID): 5 A;
5 A
150 Cel
260
NO
30
2SK2967(F)
Toshiba's 2SK2967(F) is a N-CHANNEL Power FET with max ID of 30A and Pd of 150W. Ideal for high-power applications, it operates in enhancement mode at up to 150°C.
30 A
AOT284L
Alpha & Omega Semiconductor
AOT284L by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 211mJ EAS, and 0.0057 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175 °C.
211 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
80 V
105 A
.0057 ohm
48 pF
TO-220AB
R-PSFM-T3
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
400 A
THROUGH-HOLE
SWITCHING
SILICON
STP80N70F4
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 68 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
185 mJ
68 V
85 A
.0098 ohm
340 A
MATTE TIN
STI11NM80
STI11NM80 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 400mJ EAS, operating in ENHANCEMENT MODE at up to 150 °C. With 0.4 ohm RDS(on) and 150W Pd, it's suitable for high-power circuits requiring reliable performance.
ULTRA-LOW RESISTANCE
400 mJ
800 V
11 A
.4 ohm
TO-262AA
R-PSIP-T3
IN-LINE
44 A
STW12NK60Z
STW12NK60Z by STMicroelectronics is a N-CHANNEL FET with 10A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for various industrial and automotive uses due to its robust single-channel configuration.
10 A
STB31N65M5
STB31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount configurations, this MOSFET is designed for efficient power management in various electronic devices.
22 A
NOT SPECIFIED
FET General Purpose Powers
STW31N65M5
STW31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C, utilizing metal-oxide semiconductor technology for efficient performance.
STH110N10F7-2
STH110N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.
110 A
STH110N10F7-6
STH110N10F7-6 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount designs, this MOSFET offers efficient power management in various electronic systems.
STP110N55F6
STMicroelectronics' STP110N55F6 is a single N-channel Power FET with 110A max drain current and 150W power dissipation. Utilizes metal-oxide semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
STP80N6F6
STMicroelectronics' STP80N6F6 is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for demanding environments requiring efficient power management.
IPB049NE7N3GATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Terminal Position: SINGLE; JESD-30 Code: R-PSSO-G2;
370 mJ
75 V
80 A
.0049 ohm
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
320 A
Not Qualified
TIN
GULL WING
IPD200N15N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 50 A; Package Style (Meter): SMALL OUTLINE;
170 mJ
150 V
50 A
.02 ohm
TO-252
200 A
STB60NE06L-16T4
STB60NE06L-16T4 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
LOW THRESHOLD
60 V
60 A
.016 ohm
240 A
STP60NE06L-16
STP60NE06L-16 by STMicroelectronics is a N-channel FET with 60V DS breakdown voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
STP50NE08
STP50NE08 by STMicroelectronics is a N-CHANNEL FET with 80V DS Breakdown Voltage, 200A IDM, and 0.024 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C temperature range.
300 mJ
.024 ohm
STP50NE10
STP50NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 300mJ EAS, and 0.027 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power circuits.
100 V
.027 ohm
STP60NE06-16
STP60NE06-16 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 240A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.016 ohm max RDS(on). Operating in enhancement mode, this MOSFET has a max power dissipation of 150W at 175°C.
350 mJ
STP80NE06-10
STP80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 80A max drain current. Ideal for switching applications, it features a built-in diode, 320A pulsed drain current, and 0.01 ohm max on-resistance. Suitable for enhancement mode operation in various power electronics systems.
250 mJ
.01 ohm
e0
TIN LEAD
STP80NE03L-06
STP80NE03L-06 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.009 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
AVALANCHE RATED
600 mJ
30 V
.009 ohm
700 pF
405 ns
STB50NE10T4
STB50NE10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.027 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
STB80NE03L-06T4
STB80NE03L-06T4 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. Package: PLASTIC/EPOXY, GULL WING terminals, and small outline style.
.008 ohm
STB40NF10T4
STB40NF10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
150 mJ
40 A
.028 ohm
245
Matte Tin (Sn) - annealed
STL34N65M5
STL34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 510mJ EAS, and 0.12 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 150W at 150 °C.
510 mJ
650 V
22.5 A
.12 ohm
6.3 pF
S-PSSO-N4
4
SQUARE
90 A
NO LEAD
NTE2395
Nte Electronics
NTE2395 by Nte Electronics is a Power FET with 60V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
100 mJ
STP90NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
.0065 ohm
360 A
IPI057N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Operating Mode: ENHANCEMENT MODE;
210 mJ
STP130NH02L
STP130NH02L by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage, 360A IDM, and 0.0044 ohm RDS(on). Ideal for SWITCHING applications due to its 175°C Max Operating Temp and 150W Power Dissipation. It features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package.
900 mJ
24 V
.0044 ohm
STB23NM60N
STB23NM60N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 19A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
700 mJ
600 V
19 A
.18 ohm
76 A
STI23NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSIP-T3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
40
STP23NM60N
STP23NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and a max drain current of 19A. It offers a low on-resistance of 0.18Ω and operates at up to 150 °C. This robust FET is suitable for high-power circuits.
STW23NM60N
STW23NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247
STP15NM65N
STP15NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 15.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
187 mJ
15.5 A
12 A
.38 ohm
48 A
STP70N10F4
STP70N10F4 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 65 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.
120 mJ
65 A
.0195 ohm
260 A
STW28NM50N
STW28NM50N by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 84A IDM and 0.158 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 150W and can withstand temperatures up to 150°C.
430 mJ
500 V
21 A
.158 ohm
84 A
IPI052NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
.0052 ohm
STB23NM60ND
STB23NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 78A IDM, and 0.18 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 150W Pdiss and 700mJ EAS.
19.5 A
78 A
STI23NM60ND
STI23NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 19.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP23NM60ND
STP23NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 78A IDM, 700mJ EAS, and 0.18 ohm RDS(on). Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals. Operating in ENHANCEMENT MODE up to 150°C.
STW23NM60ND
STW23NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 19.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP19NM65N
STP19NM65N by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 62A IDM, 400mJ EAS, and 0.27ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and operates up to 150°C.
.27 ohm
62 A
STW19NM65N
STW19NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 15.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
BUK9635-100A,118
NXP Semiconductors' BUK9635-100A,118 is a N-channel Power FET with 100V DS breakdown voltage and 165A IDM. Ideal for switching applications, it features a built-in diode, 0.039 ohm RDS(on), and 175°C max operating temp.
125 mJ
41 A
.039 ohm
165 A
Tin (Sn)
IRF540,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Pulsed Drain Current (IDM): 92 A; No. of Elements: 1;
230 mJ
28 A
23 A
.077 ohm
92 A
PHP152NQ03LTA,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
560 mJ
25 V
75 A
.005 ohm
IPI200N15N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
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