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.5 A Power Bipolar Junction Transistors (BJT) 24

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ULQ2003AN by Texas Instruments

ULQ2003AN

Texas Instruments

ULQ2003AN by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with terminal finish in Ni/Pd/Au, suitable for complex configurations.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULN2003APWRG4 by Texas Instruments

ULN2003APWRG4

Texas Instruments

ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MO-153AB

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NCV1413BDR2 by Onsemi

NCV1413BDR2

Onsemi

NCV1413BDR2 by Onsemi is a NPN BJT transistor for switching applications. It has a min hFE of 1000, max VCE of 50V, and max IC of 0.5A. This surface-mount transistor comes in a small outline package with 16 terminals and Gull Wing form factor, ideal for compact electronic designs.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

1000

R-PDSO-G16

e0

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

MC1413PG by Onsemi

MC1413PG

Onsemi

MC1413PG by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 1000.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

1000

R-PDIP-T16

e3

7

16

150 Cel

-20 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

Not Qualified

NO

Tin (Sn)

THROUGH-HOLE

DUAL

40

SWITCHING

SILICON

MPSW42RLRAG by Onsemi

MPSW42RLRAG

Onsemi

MPSW42RLRAG by Onsemi is a NPN BJT with max VCEsat of 0.5V, hFE of 40, and max IC of 0.5A. Ideal for power applications in temperatures ranging from -55 to 150 °C, it features a collector-emitter voltage of 300V. Its through-hole package makes it suitable for various cylindrical power designs.

.5 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

.5 V

MC1413BPG by Onsemi

MC1413BPG

Onsemi

MC1413BPG by Onsemi is a NPN BJT transistor with 16 terminals. It has a hFE of 1000, IC of 0.5A, and VCE of 50V. Primarily used for switching applications due to its complex configuration and max operating temperature of 150°C.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

1000

R-PDIP-T16

e3

7

16

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

2N5655G by Onsemi

2N5655G

Onsemi

2N5655G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V and max. power dissipation of 20W. Ideal for switching applications, it has a min. DC current gain of 5 and operates at up to 150°C, making it suitable for various electronic circuits.

.5 A

250 V

SINGLE

5

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

20 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N5657G by Onsemi

2N5657G

Onsemi

The Onsemi 2N5657G is a NPN power BJT with max. collector-emitter voltage of 350V and max. collector current of 0.5A, ideal for switching applications with a max. power dissipation of 20W. Its single configuration and through-hole terminal form make it suitable for various electronic circuits requiring high-speed operation up to 10MHz transition frequency.

.5 A

350 V

SINGLE

5

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

BD159G by Onsemi

BD159G

Onsemi

The Onsemi BD159G is a NPN BJT transistor with 3 terminals and a max power dissipation of 20W. It has a min DC current gain of 30, operates at up to 150 °C, and can handle a collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration and flange mount package style.

HIGH RELIABILITY

.5 A

350 V

SINGLE

30

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MC1413BDG by Onsemi

MC1413BDG

Onsemi

MC1413BDG by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 1000.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

1000

R-PDSO-G16

e3

1

7

16

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

MJD350G by Onsemi

MJD350G

Onsemi

MJD350G by Onsemi is a PNP BJT transistor with 300V VCE, 0.5A IC, and 15W power dissipation. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers a min hFE of 30 and tin finish on single terminal.

COLLECTOR

.5 A

300 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

MJE344G by Onsemi

MJE344G

Onsemi

The Onsemi MJE344G is a NPN BJT transistor with 200V VCEO, 0.5A IC, and 20W Ptot. Ideal for amplifier applications, it has hFE of 30, fT of 15MHz, and operates up to 150°C. The package is rectangular with flange mount style and matte tin finish in a through-hole configuration.

.5 A

200 V

SINGLE

30

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

15 MHz

MPS6717G by Onsemi

MPS6717G

Onsemi

MPS6717G by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications, it operates b/w -55 to 150 °C with a max VCE of 80V. The package is cylindrical with through-hole terminals and can dissipate up to 2.5W power.

.5 A

30 pF

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

.5 V

MPS6717RLRAG by Onsemi

MPS6717RLRAG

Onsemi

MPS6717RLRAG by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications due to its high power dissipation (2.5W) and collector-emitter voltage of 80V. Its package style is cylindrical with through-hole terminals for easy mounting in various electronic circuits.

.5 A

30 pF

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

.5 V

MPSW42G by Onsemi

MPSW42G

Onsemi

MPSW42G by Onsemi is a NPN BJT with 300V VCE, 0.5A IC, and 40 hFE. It is used in power applications due to its 2.5W Pdiss and -55 °C to 150°C operating temp range. The transistor's through-hole package makes it suitable for various cylindrical style designs.

.5 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

.5 V

MPSW55G by Onsemi

MPSW55G

Onsemi

The Onsemi MPSW55G is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 50, and max IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and low collector-emitter voltage of 60V. With a package style of cylindrical, it can dissipate up to 2.5W power in ambient temperatures up to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSW55RLRAG by Onsemi

MPSW55RLRAG

Onsemi

MPSW55RLRAG by Onsemi is a PNP BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications. It has a min hFE of 50 and can handle a max collector-emitter voltage of 60V. With a package style of cylindrical and terminal finish of Tin Silver Copper, it operates b/w -55 to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

ULN2002ANE4 by Texas Instruments

ULN2002ANE4

Texas Instruments

ULN2002ANE4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and through-hole terminal form in a rectangular package style.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

1.6 V

ULN2004ANE4 by Texas Instruments

ULN2004ANE4

Texas Instruments

ULN2004ANE4 by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications due to its complex configuration and max VCE of 50V in a rectangular package style (IN-LINE).

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

1.6 V

SN75468NE4 by Texas Instruments

SN75468NE4

Texas Instruments

SN75468NE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. Ideal for switching applications in temperatures ranging from 0 to 70°C, it features a PLASTIC/EPOXY package with 16 terminals in an IN-LINE style.

LOGIC LEVEL COMPATIBLE

.5 A

100 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

70 Cel

0 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

Not Qualified

NO

NICKEL PALLADIUM GOLD

THROUGH-HOLE

DUAL

SWITCHING

SILICON

1.6 V

FZT657QTA by Diodes Incorporated

FZT657QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): .5 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

COLLECTOR

.5 A

300 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

30 MHz

FZT795AQTA by Diodes Incorporated

FZT795AQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

HIGH RELIABILITY

COLLECTOR

.5 A

140 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2DA1971Q-7 by Diodes Incorporated

2DA1971Q-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

HIGH RELIABILITY

COLLECTOR

.5 A

400 V

SINGLE

140

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

75 MHz

ZDT795AQTA by Diodes Incorporated

ZDT795AQTA

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2.75 W; Maximum Collector Current (IC): .5 A;

.5 A

15 pF

140 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G8

e3

1

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.75 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

.3 V