Loading...

ULN2004ANE4

Texas Instruments

ULN2004ANE4 by Texas Instruments

ULN2004ANE4 by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications due to its complex configuration and max VCE of 50V in a rectangular package style (IN-LINE).

Median Price

$0.278

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 314 parts In-Stock

1+ parts

$0.174

100+ parts

$0.163

1k+ parts

$0.148

10k+ parts

-

314

$0.174

$0.163

$0.148

-

Adafruit Industries

USA . 95 parts In-Stock

1+ parts

$0.278

100+ parts

$0.278

1k+ parts

$0.278

10k+ parts

-

95

$0.278

$0.278

$0.278

-

Mouser Electronics

USA . 151 parts In-Stock

1+ parts

$1.340

100+ parts

$0.545

1k+ parts

$0.376

10k+ parts

$0.284

151

$1.340

$0.545

$0.376

$0.284

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,488 parts In-Stock

1+ parts

$0.165

100+ parts

-

1k+ parts

-

10k+ parts

-

3,488

$0.165

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.273

-

-

-

Component Electronics Inc.

Canada . 37 parts In-Stock

1+ parts

$0.580

100+ parts

$0.430

1k+ parts

$0.380

10k+ parts

-

37

$0.580

$0.430

$0.380

-

Vyrian

USA . 7,695 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,695

-

-

-

-

Bristol Electronics

USA . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 312 parts In-Stock

1+ parts

$0.148

100+ parts

$0.144

1k+ parts

$0.144

10k+ parts

-

312

$0.148

$0.144

$0.144

-

Ampacity Inc.

Singapore . 217 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

-

10k+ parts

-

217

$0.148

-

-

-

Corphita

USA . 2,621 parts In-Stock

1+ parts

$0.157

100+ parts

-

1k+ parts

-

10k+ parts

-

2,621

$0.157

-

-

-

Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

$0.273

100+ parts

$0.259

1k+ parts

$0.246

10k+ parts

$0.243

1,000

$0.273

$0.259

$0.246

$0.243

Continental Prestige Electronics

USA . 3,163 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

$0.268

3,163

$0.273

-

-

$0.268

Argo Parts USA

USA . 459 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

$0.265

459

$0.273

-

-

$0.265

Advanced Electronics

New Zealand . 95 parts In-Stock

1+ parts

$0.278

100+ parts

$0.278

1k+ parts

$0.278

10k+ parts

-

95

$0.278

$0.278

$0.278

-

Corohmni

South Africa . 438 parts In-Stock

1+ parts

$0.385

100+ parts

-

1k+ parts

-

10k+ parts

-

438

$0.385

-

-

-

Microchip USA

USA . 1,149 parts In-Stock

1+ parts

$1.020

100+ parts

$1.010

1k+ parts

$1.010

10k+ parts

$1.000

1,149

$1.020

$1.010

$1.010

$1.000

Parana Technologies

USA . 1,758 parts In-Stock

1+ parts

$1.067

100+ parts

-

1k+ parts

$1.920

10k+ parts

-

1,758

$1.067

-

$1.920

-

DigiPath Technology Company

USA . 1,742 parts In-Stock

1+ parts

$1.175

100+ parts

$1.081

1k+ parts

-

10k+ parts

-

1,742

$1.175

$1.081

-

-

ChromeModa Solutions

Germany . 5,729 parts In-Stock

1+ parts

$1.199

100+ parts

$0.983

1k+ parts

-

10k+ parts

-

5,729

$1.199

$0.983

-

-

IDEA Electronic Components Group

UK . 809 parts In-Stock

1+ parts

$1.199

100+ parts

-

1k+ parts

$1.079

10k+ parts

-

809

$1.199

-

$1.079

-

Perfect Parts

USA . 1,027 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,027

-

-

-

-

Overview

Upgrade your electronic designs with the ULN2004ANE4 by Texas Instruments, a high-quality power bipolar junction transistor that offers reliable performance and durability. Manufactured by a trusted industry leader, this transistor is perfect for a wide range of applications, from switching circuits to motor control. With its superior functionality and efficiency, the ULN2004ANE4 provides exceptional value and benefits to customers, ensuring optimal performance and long-lasting results. Trust Texas Instruments for all your electronic component needs and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, ensuring a longer lifespan and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and suitable for a wide range of uses.

Configuration: COMPLEX

The complex configuration indicates that this transistor is designed for more advanced and specialized applications, offering enhanced performance and capabilities.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in scenarios where rapid on/off switching is required.

Maximum VCEsat: 1.6 V

Low VCEsat minimizes power dissipation and heat generation, improving overall efficiency and reducing the risk of thermal issues.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to mount and integrate the transistor into various electronic circuits and designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections, making installation and soldering easier and more reliable.

No. of Elements: 7

Seven elements in one package offer increased functionality and potential for complex circuit designs, suitable for more advanced projects.

No. of Terminals: 16

Having 16 terminals allows for more connectivity options and flexibility in circuit design, enabling the transistor to be used in a variety of configurations.

Package Style (Meter): IN-LINE

In-line package style is convenient for space-constrained applications, offering a compact and streamlined design for easy integration.

Maximum Collector-Emitter Voltage: 50 V

High maximum VCE voltage rating ensures safe operation in circuits with higher voltage requirements, making this transistor suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, making the transistor ideal for demanding and long-lasting applications.

Maximum Collector Current (IC): 0.5 A

With a maximum IC of 0.5 A, this transistor is capable of handling moderate current loads, making it suitable for various electronics and power supply circuits.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Nickel/palladium/gold terminal finish offers excellent conductivity and corrosion resistance, ensuring stable connections and optimal performance over time.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in mounting and circuit layout, allowing for different configuration options to meet specific project requirements.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2004ANE4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULN2004ANE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 20