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ULN2002ANE4

Texas Instruments

ULN2002ANE4 by Texas Instruments

ULN2002ANE4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and through-hole terminal form in a rectangular package style.

Median Price

$0.585

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 30 parts In-Stock

1+ parts

$0.585

100+ parts

-

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30

$0.585

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Vyrian

USA . 6,389 parts In-Stock

1+ parts

-

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6,389

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Digiode

USA . 3,747 parts In-Stock

1+ parts

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3,747

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,572 parts In-Stock

1+ parts

$0.050

100+ parts

-

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1,572

$0.050

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Continental Prestige Electronics

USA . 6,436 parts In-Stock

1+ parts

$0.585

100+ parts

-

1k+ parts

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$0.573

6,436

$0.585

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-

$0.573

Argo Parts USA

USA . 3,507 parts In-Stock

1+ parts

$0.585

100+ parts

-

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10k+ parts

$0.567

3,507

$0.585

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-

$0.567

Parana Technologies

USA . 2,312 parts In-Stock

1+ parts

$0.967

100+ parts

-

1k+ parts

$1.865

10k+ parts

-

2,312

$0.967

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$1.865

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DigiPath Technology Company

USA . 1,513 parts In-Stock

1+ parts

$1.064

100+ parts

$0.979

1k+ parts

-

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1,513

$1.064

$0.979

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ChromeModa Solutions

Germany . 620 parts In-Stock

1+ parts

$1.086

100+ parts

$0.891

1k+ parts

-

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620

$1.086

$0.891

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IDEA Electronic Components Group

UK . 156 parts In-Stock

1+ parts

$1.086

100+ parts

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$0.977

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156

$1.086

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$0.977

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Corohmni

South Africa . 219 parts In-Stock

1+ parts

$1.566

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219

$1.566

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AZTECH Wire

Italy . 747 parts In-Stock

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$9.107

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747

$9.107

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Semicontronic

India . 208 parts In-Stock

1+ parts

$15.050

100+ parts

$14.674

1k+ parts

$14.598

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208

$15.050

$14.674

$14.598

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Ampacity Inc.

Singapore . 373 parts In-Stock

1+ parts

$55.050

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373

$55.050

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Microchip USA

USA . 4,359 parts In-Stock

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4,359

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Corphita

USA . 2,417 parts In-Stock

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2,417

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.573

1k+ parts

$0.556

10k+ parts

$0.544

1,000

-

$0.573

$0.556

$0.544

Overview

Enhance your power management solutions with the ULN2002ANE4 by Texas Instruments. Manufactured with precision and expertise, this Power Bipolar Junction Transistor offers reliable performance and durability. Ideal for switching applications, this complex transistor provides a maximum VCEsat of 1.6V and a maximum collector-emitter voltage of 50V. With 7 elements and 16 terminals, this product boasts a high-quality plastic/epoxy package body material for added protection. Trust in Texas Instruments to deliver top-notch components that add value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, making it ideal for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: COMPLEX

Complex configuration allows for more advanced circuit designs and functionality, making this transistor suitable for complex applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and fast switching capabilities.

Maximum VCEsat: 1.6 V

Low VCEsat value indicates minimal saturation voltage, leading to efficient operation and low power dissipation.

Package Shape: RECTANGULAR

Rectangular shape provides ease of handling and mounting in circuit boards, ensuring convenient integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, making installation and replacement hassle-free.

No. of Elements: 7

Multiple elements provide increased functionality and performance, allowing for complex circuit configurations.

No. of Terminals: 16

With 16 terminals, this transistor offers ample connectivity options for various circuit configurations and external connections.

Package Style (Meter): IN-LINE

In-line package style ensures compact design and efficient use of space, ideal for applications with limited board space.

Maximum Collector-Emitter Voltage: 50 V

High maximum VCE voltage rating allows for versatile use in a wide range of voltage applications, increasing compatibility.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance, ensuring long-term stability and durability of the transistor.

Maximum Collector Current (IC): 0.5 A

With a maximum IC of 0.5 A, this transistor can handle moderate current loads, suitable for a variety of low to medium power applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Nickel/Palladium/Gold terminal finish offers excellent conductivity and corrosion resistance, ensuring reliable connections for long-term use.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connection orientation, allowing for easy integration into different circuit layouts.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2002ANE4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULN2002ANE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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