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260 W Insulated Gate Bipolar Transistors (IGBT) 25

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB30H60DF by STMicroelectronics

STGB30H60DF

STMicroelectronics

STGB30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Ptot of 260W. Ideal for power control applications, it operates b/w -40 to 175 °C with a VCEmax of 600V.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

NGTB30N120IHLWG by Onsemi

NGTB30N120IHLWG

Onsemi

NGTB30N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 260W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

60 A

1200 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

260 W

Insulated Gate BIP Transistors

NO

TIN

NGTB40N120FLWG by Onsemi

NGTB40N120FLWG

Onsemi

NGTB40N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 260W max power dissipation. Ideal for power control applications, it features a built-in diode, 630ns turn-off time, and operates up to 150°C.

COLLECTOR

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

630 ns

172 ns

NGTB40N120IHLWG by Onsemi

NGTB40N120IHLWG

Onsemi

NGTB40N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It has a nominal turn off time of 565ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can handle up to 260W of power dissipation.

COLLECTOR

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

565 ns

NGTB40N120LWG by Onsemi

NGTB40N120LWG

Onsemi

NGTB40N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is designed for motor control applications, featuring a nominal turn-off time of 565ns and a max power dissipation of 260W. The transistor has a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.

COLLECTOR

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

565 ns

178 ns

STGW30H60DF by STMicroelectronics

STGW30H60DF

STMicroelectronics

STGW30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 60A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and can dissipate up to 260W at temperatures ranging from -40 to 175 °C.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

STGB30V60F by STMicroelectronics

STGB30V60F

STMicroelectronics

STGB30V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 225ns, ton of 59ns, and can handle up to 260W power dissipation. Suitable for surface mount with operating temperature range from -55°C to 175°C.

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGP30V60F by STMicroelectronics

STGP30V60F

STMicroelectronics

STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGW30V60F by STMicroelectronics

STGW30V60F

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Transistor Element Material: SILICON;

60 A

600 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGWT30V60F by STMicroelectronics

STGWT30V60F

STMicroelectronics

STGWT30V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Ptot of 260W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 225ns and high operating temperature range (-55 to 175 °C).

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGWT30H65FB by STMicroelectronics

STGWT30H65FB

STMicroelectronics

STGWT30H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 260W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 223ns and low VCEsat of 2V. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGP30H65F by STMicroelectronics

STGP30H65F

STMicroelectronics

STMicroelectronics' STGP30H65F is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2.4V VCEsat. Ideal for POWER CONTROL applications, it has a toff of 234ns and ton of 64ns. The transistor operates b/w -55 °C to 175°C in a PLASTIC/EPOXY package with FLANGE MOUNT style.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

STGWA35HF60WDI by STMicroelectronics

STGWA35HF60WDI

STMicroelectronics

STGWA35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 70A current capacity, and a fast turn-off time of 295ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGE50NC60WD by STMicroelectronics

STGE50NC60WD

STMicroelectronics

STGE50NC60WD from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.6V, supports up to 100A collector current, and operates at a max temp of 150 °C. Its compact flange mount design ensures efficient thermal management.

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

343 ns

69 ns

2.6 V

STGE50NC60VD by STMicroelectronics

STGE50NC60VD

STMicroelectronics

STGE50NC60VD by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 90A, and Pmax of 260W. Ideal for power control applications due to its fast turn-off time (toff) of 247ns and turn-on time (ton) of 61ns. Operates at a max temperature of 150°C with a collector-emitter voltage rating of 600V.

ISOLATED

90 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

247 ns

61 ns

2.5 V

STGY40NC60VD by STMicroelectronics

STGY40NC60VD

STMicroelectronics

STMicroelectronics' STGY40NC60VD is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 260W Ptot. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and a turn-off time of 247ns. The package is RECTANGULAR in shape with THROUGH-HOLE terminals.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

61 ns

STGB30H60DLFB by STMicroelectronics

STGB30H60DLFB

STMicroelectronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;

60 A

600 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

260 W

Insulated Gate BIP Transistors

YES

NOT SPECIFIED

STGW30H60DLFB by STMicroelectronics

STGW30H60DLFB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

60 A

600 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

260 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWA30H60DFB by STMicroelectronics

STGWA30H60DFB

STMicroelectronics

STGWA30H60DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with a built-in diode.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWT30HP65FB by STMicroelectronics

STGWT30HP65FB

STMicroelectronics

STGWT30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Its robust design ensures reliable performance in demanding environments.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

169 ns

2 V

STGB30H60DLLFBAG by STMicroelectronics

STGB30H60DLLFBAG

STMicroelectronics

STGB30H60DLLFBAG from STMicroelectronics is a robust N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 2.15V, supports up to 60A collector current, and operates within -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

2.5 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

370 ns

2.15 V

STGB30H65FB by STMicroelectronics

STGB30H65FB

STMicroelectronics

STGB30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWA30H65FB by STMicroelectronics

STGWA30H65FB

STMicroelectronics

STGWA30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.

60 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWA30H65DFB by STMicroelectronics

STGWA30H65DFB

STMicroelectronics

STGWA30H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

62.8 ns

2 V

STGWA30HP65FB by STMicroelectronics

STGWA30HP65FB

STMicroelectronics

STGWA30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

169 ns

2 V