Loading...

25 A Insulated Gate Bipolar Transistors (IGBT) 28

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGP14N60D by STMicroelectronics

STGP14N60D

STMicroelectronics

STMicroelectronics' STGP14N60D is an N-CHANNEL IGBT with 600V VCE, 25A IC, and 95W Ptot. It operates up to 175 °C making it ideal for high-power applications in industrial electronics and motor control systems.

25 A

600 V

6.5 V

20 V

175 Cel

N-CHANNEL

95 W

Insulated Gate BIP Transistors

NO

DDB2U30N08VRBOMA1 by Infineon Technologies

DDB2U30N08VRBOMA1

Infineon Technologies

DDB2U30N08VRBOMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 145ns nominal turn off time. It is used in single phase diode bridge applications due to its built-in diode and thermistor, featuring a rectangular package style for flange mount installation at temperatures up to 150°C.

ISOLATED

25 A

600 V

SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

R-XUFM-X12

1

12

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

145 ns

38 ns

BSM15GD120DN2BOSA1 by Infineon Technologies

BSM15GD120DN2BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Nominal Turn Off Time (toff): 470 ns; Terminal Position: UPPER;

ISOLATED

25 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

470 ns

100 ns

BSM15GD120DN2E3224BOSA1 by Infineon Technologies

BSM15GD120DN2E3224BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;

ISOLATED

25 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

470 ns

100 ns

FP15R12KT3BOSA1 by Infineon Technologies

FP15R12KT3BOSA1

Infineon Technologies

FP15R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 25A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.

ISOLATED

25 A

1200 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

140 ns

FS20R06VE3BOMA1 by Infineon Technologies

FS20R06VE3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

25 A

600 V

COMPLEX

R-XUFM-W13

6

13

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

WIRE

UPPER

NOT SPECIFIED

SILICON

250 ns

320 ns

FS20R06VE3B2BOMA1 by Infineon Technologies

FS20R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-XUFM-X15; Terminal Position: UPPER;

ISOLATED

25 A

600 V

COMPLEX

R-XUFM-X15

6

15

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

250 ns

32 ns

STGB20N40LZ by STMicroelectronics

STGB20N40LZ

STMicroelectronics

STGB20N40LZ IGBT from STMicroelectronics features a max VCEsat of 1.8V, supports automotive ignition applications, and operates at up to 175 °C. It offers a max collector current of 25A and includes built-in TVS diode for enhanced protection. Ideal for compact designs with its surface mount configuration.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.5 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

8200 ns

5200 ns

1.8 V

STGB14NC60KT4 by STMicroelectronics

STGB14NC60KT4

STMicroelectronics

STGB14NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic systems.

25 A

600 V

SINGLE

6.5 V

20 V

R-PDSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

POWER CONTROL

SILICON

340 ns

31.5 ns

STGD18N40LZ-1 by STMicroelectronics

STGD18N40LZ-1

STMicroelectronics

STGD18N40LZ-1 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 125 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

25 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-251

R-PSIP-T3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGD19N40LZ by STMicroelectronics

STGD19N40LZ

STMicroelectronics

STGD19N40LZ by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.85V, IC of 25A, and Ptot of 125W. It is used for power control applications in a small outline package with a max operating temperature of 175°C.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

125 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

STGB7NC60HDT4 by STMicroelectronics

STGB7NC60HDT4

STMicroelectronics

STGB7NC60HDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 25A collector current, and a fast turn-off time of 221ns. Ideal for high-performance switching in compact designs.

25 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

221 ns

25.5 ns

STGP7NC60H by STMicroelectronics

STGP7NC60H

STMicroelectronics

STGP7NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

25 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

221 ns

25.5 ns

MG1215H-XBN2MM by Littelfuse

MG1215H-XBN2MM

Littelfuse

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

25 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X24

7

24

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

610 ns

140 ns

2.15 V

FP20R06KL4BOMA1 by Infineon Technologies

FP20R06KL4BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn On Time (ton): 60 ns;

ISOLATED

25 A

600 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

185 ns

60 ns

STGB25N40LZAG by STMicroelectronics

STGB25N40LZAG

STMicroelectronics

STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.

COLLECTOR

25 A

435 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

A1P25S12M3 by STMicroelectronics

A1P25S12M3

STMicroelectronics

A1P25S12M3 by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.45V, supports up to 197W dissipation, and operates b/w -40 °C to 150 °C. Ideal for complex applications requiring robust performance.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

139 ns

2.45 V

A2C25S12M3-F by STMicroelectronics

A2C25S12M3-F

STMicroelectronics

STMicroelectronics A2C25S12M3-F is an N-CHANNEL IGBT for POWER CONTROL applications. With VCEsat of 2.45V, IC of 25A, and toff of 338ns, it offers efficient power management. Operating b/w -40°C to 150°C, this transistor has a max VCE of 1200V in a RECTANGULAR package with 35 terminals.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

338 ns

125.2 ns

2.45 V

A2C25S12M3 by STMicroelectronics

A2C25S12M3

STMicroelectronics

A2C25S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.45V, 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. Its robust design includes a bridge configuration with built-in diodes.

25 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X35

6

35

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

338 ns

125.2 ns

2.45 V

A1P25S12M3-F by STMicroelectronics

A1P25S12M3-F

STMicroelectronics

A1P25S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, 197W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

139 ns

2.45 V

NXH25T120L2Q1PG by Onsemi

NXH25T120L2Q1PG

Onsemi

NXH25T120L2Q1PG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 25A IC, and 77ns ton. Ideal for POWER CONTROL applications, it has a max power dissipation of 81W and operates b/w -40 to 150 °C.

ISOLATED

25 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X44

12

44

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

81 W

YES

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

551 ns

77 ns

2.5 V

NXH25T120L2Q1PTG by Onsemi

NXH25T120L2Q1PTG

Onsemi

NXH25T120L2Q1PTG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 25A IC, and 81W power dissipation. Ideal for power control applications, it features a turn-off time of 551ns and operates b/w -40 to 150 °C.

ISOLATED

25 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X44

12

44

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

81 W

YES

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

551 ns

77 ns

2.5 V

STGB19N40LZ by STMicroelectronics

STGB19N40LZ

STMicroelectronics

STGB19N40LZ by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 1.85V, supports up to 150W power dissipation, and operates b/w -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management.

BULK: 1000

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

150 W

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

FP25R12W1T7B11BPSA1 by Infineon Technologies

FP25R12W1T7B11BPSA1

Infineon Technologies

Infineon Technologies' FP25R12W1T7B11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 25A max collector current, and 730ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.

ISOLATED

25 A

1200 V

COMPLEX

6.45 V

20 V

R-XUFM-X23

7

23

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

730 ns

65 ns

NXH25C120L2C2SG by Onsemi

NXH25C120L2C2SG

Onsemi

NXH25C120L2C2SG by Onsemi is an IGBT transistor with 1200V VCEsat, 25A IC, and 320ns toff. Ideal for motor control applications due to its N-CHANNEL polarity and BRIDGE configuration with built-in diode. Operates in temperatures from -40 °C to 150°C, making it suitable for various industrial settings.

ISOLATED

25 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

6.8 V

20 V

R-PDIP-T26

7

26

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

NO

THROUGH-HOLE

DUAL

MOTOR CONTROL

SILICON

320 ns

128 ns

2.4 V

STGB25N36LZAG by STMicroelectronics

STGB25N36LZAG

STMicroelectronics

STGB25N36LZAG IGBT from STMicroelectronics features a max VCEsat of 1.25V, supports up to 25A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for automotive ignition applications, it ensures reliable performance with built-in TVS diode. Its compact surface mount design enhances space efficiency in electronic circuits.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

STGI25N36LZAG by STMicroelectronics

STGI25N36LZAG

STMicroelectronics

STGI25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, supports up to 25A collector current, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in harsh environments.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

R-PSIP-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

150 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

STGD25N36LZAG by STMicroelectronics

STGD25N36LZAG

STMicroelectronics

STGD25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, power dissipation of 150W, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in demanding environments.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-252

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V