Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FS100R17KS4F
Infineon Technologies
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
100 A
1700 V
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
20 V
R-XUFM-X23
6
23
150 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
960 W
Insulated Gate BIP Transistors
NO
UPPER
POWER CONTROL
SILICON
515 ns
141 ns
4.7 V
STGW50H60DF
STMicroelectronics
STGW50H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 100A max collector current. It has a built-in diode, 285ns turn-off time, and 360W power dissipation. Ideal for power control applications requiring high efficiency and reliability in a flange mount package.
600 V
SINGLE WITH BUILT-IN DIODE
TO-247
R-PSFM-T3
e3
1
3
PLASTIC/EPOXY
360 W
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
285 ns
91 ns
NGTB50N60FLWG
Onsemi
NGTB50N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 223W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
6.5 V
223 W
Tin (Sn)
IGW60T120FKSA1
Infineon's IGW60T120FKSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and 730ns turn-off time. The package is rectangular in shape with through-hole terminals.
COLLECTOR
1200 V
TO-247AD
TIN
730 ns
95 ns
NGTB50N60FWG
NGTB50N60FWG by Onsemi is an N-CHANNEL IGBT with 223W power dissipation, 600V collector-emitter voltage, and 100A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
SIGC81T60SNCX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Nominal Turn Off Time (toff): 540 ns; Nominal Turn On Time (ton): 115 ns;
S-XUUC-N10
10
SQUARE
UNCASED CHIP
Not Qualified
YES
NO LEAD
540 ns
115 ns
FS75R12KS4BOSA1
Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
ISOLATED
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X39
39
390 ns
190 ns
BSM15GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; Nominal Turn Off Time (toff): 400 ns;
COMPLEX
R-XUFM-X24
7
24
175 Cel
400 ns
140 ns
BSM75GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;
BSM75GB60DLCHOSA1
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: UNSPECIFIED;
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
205 ns
90 ns
SIGC81T60NCX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Package Style (Meter): UNCASED CHIP; Nominal Turn On Time (ton): 125 ns;
235 ns
125 ns
IGP50N60TXKSA1
IGP50N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can operate at temperatures up to 175°C.
FAST SWITCHING
TO-220AB
396 ns
60 ns
IGW50N60TFKSA1
IGW50N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
TO-247AC
SGW50N60HSFKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Transistor Application: MOTOR CONTROL; Case Connection: COLLECTOR;
MOTOR CONTROL
370 ns
79 ns
BSM50GD170DLBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; JESD-30 Code: R-XUFM-X21; Package Style (Meter): FLANGE MOUNT;
R-XUFM-X21
21
930 ns
200 ns
IGW50N60H3FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; JEDEC-95 Code: TO-247;
297 ns
54 ns
IKW50N60H3FKSA1
IKW50N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 297ns toff. Ideal for power control applications due to its single configuration with built-in diode. Operates at a max temperature of 175°C in a rectangular package style.
FS100R17N3E4BOSA1
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
600 W
2.3 V
SIGC109T120R3LEX1SA2
N-CHANNEL; Maximum Collector Current (IC): 100 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
FS75R12KE3GBOSA1
FS75R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V, collector current of 100A, and turn-off time of 610ns. Ideal for applications requiring high power switching such as motor drives and inverters due to its silicon transistor element material and isolated case connection.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
35
610 ns
340 ns
FS75R12KT3GBOSA1
FS75R12KT3GBOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 610 ns and ton of 340 ns, suitable for high-power applications. With a Vce(max) of 1200V and Ic(max) of 100A, it operates at temperatures up to 150°C, making it ideal for industrial power systems.
FF75R12YT3BOMA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Terminal Position: UPPER; Nominal Turn Off Time (toff): 710 ns;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X9
9
125 Cel
710 ns
108 ns
FS75R07U1E4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 275 W; Maximum Collector Current (IC): 100 A; Package Shape: RECTANGULAR;
650 V
R-XUFM-X32
32
-40 Cel
275 W
UL APPROVED
302 ns
43 ns
1.95 V
NGTB50N120FL2WG
NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
535 W
MATTE TIN
F475R06W1E3BOMA1
Infineon's F475R06W1E3BOMA1 IGBT features N-CHANNEL polarity, 600V max. collector-emitter voltage, and 100A max. collector current. Ideal for power control applications with a complex configuration, it offers fast turn-off time of 330ns and turn-on time of 45ns in a rectangular package with flange mount style.
R-XUFM-X11
4
11
330 ns
45 ns
F475R12KS4B11BOSA1
F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
F475R12KS4BOSA1
F475R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max VCEsat of 3.75V and a max collector-emitter voltage of 1200V, making it ideal for power control applications requiring high voltage handling capabilities. With a nominal turn-off time of 390ns and a max power dissipation of 500W, this rectangular package transistor offers efficient performance in various power control systems.
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
500 W
3.75 V
NGTB50N60FL2WG
NGTB50N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 417W Pd. It operates up to 175 °C making it ideal for high-power applications like motor drives and inverters.
417 W
IXGN60N60
IXYS Corporation
IXYS Corporation's IXGN60N60 is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 250W Pd. Ideal for POWER CONTROL applications, it features a toff of 650ns, tf of 700ns, and ton of 50ns. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures efficient heat dissipation up to 150°C.
FAST
700 ns
5 V
R-PUFM-X4
250 W
NICKEL
650 ns
50 ns
NGTB30N60L2WG
NGTB30N60L2WG by Onsemi is an N-CHANNEL IGBT with 225W power dissipation, 600V collector-emitter voltage, and 100A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control equipment.
225 W
NGTB50N65FL2WG
NGTB50N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 417W Pd. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
IFS100B12N3E4_B39
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X34
34
515 W
UL RECOGNIZED
210 ns
2.1 V
STGE50NC60WD
STGE50NC60WD from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.6V, supports up to 100A collector current, and operates at a max temp of 150 °C. Its compact flange mount design ensures efficient thermal management.
260 W
343 ns
69 ns
2.6 V
STGW50NC60W
STGW50NC60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 285 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
5.75 V
285 W
STGE50NB60HD
STGE50NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max VCEsat of 2.8V, 600V collector-emitter voltage, and handles up to 100A current. With a compact flange mount design, it operates efficiently at temperatures up to 150 °C.
300 W
2.8 V
SIGC109T120R3
Infineon's SIGC109T120R3 is an N-CHANNEL IGBT with a max voltage of 1200V and max current of 100A. Ideal for POWER CONTROL applications, it has a turn-off time of 610ns and turn-on time of 330ns. Suitable for surface mount with a max operating temp of 150°C.
R-XUUC-N
FMG1G100US60L
Fairchild Semiconductor
FMG1G100US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 2.8V VCE. Ideal for MOTOR CONTROL applications, it has a toff of 320ns and ton of 85ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and SILICON element.
LOW CONDUCTION LOSS
R-PUFM-X7
400 W
320 ns
85 ns
NGTB50N60S1WG
NGTB50N60S1WG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2V and a max IC of 100A. It is used for power control applications, featuring a built-in diode and operating temperature range from -55 to 175 °C.
-55 Cel
341 ns
139 ns
2 V
NGTB75N60SWG
NGTB75N60SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2V, IC of 100A, and Pdiss of 595W. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range in a rectangular package style.
595 W
380 ns
150 ns
NGTB60N65FL2WG
NGTB60N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 100A IC, and 595W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. The transistor has a turn-off time of 278ns and turn-on time of 168ns in a rectangular package with through-hole terminals.
Matte Tin (Sn) - annealed
278 ns
168 ns
IKZ75N65EL5XKSA1
IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
5.8 V
R-PSFM-T4
536 W
474 ns
133 ns
1.35 V
IGW50N60TPXKSA1
IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
SIGC54T60R3EX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; Terminal Position: UPPER;
R-XUUC-N10
IKQ50N120CH3XKSA1
IKQ50N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it has a turn-off time of 466ns and turn-on time of 68ns. Package style is flange mount with through-hole terminals.
466 ns
68 ns
IKY50N120CH3XKSA1
IKY50N120CH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 100A. It has a turn-off time of 462ns and turn-on time of 62ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
462 ns
62 ns
MG0675S-BN4MM
Littelfuse
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
310 ns
1.9 V
FGHL50T65SQ
The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.
6.4 V
268 W
FGHL50T65SQDT
FGHL50T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 100A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.
RC-IGBT
159 ns
40.4 ns
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