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100 A Insulated Gate Bipolar Transistors (IGBT) 52

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DGTD65T50S1PT by Diodes Incorporated

DGTD65T50S1PT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel;

100 A

650 V

SINGLE WITH BUILT-IN DIODE

6.2 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

375 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

399 ns

117 ns

2.4 V

DGTD65T60S2PT by Diodes Incorporated

DGTD65T60S2PT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 428 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V;

HIGH SPEED SWITCHING

100 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

428 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

187 ns

83 ns

2.4 V

NXH100T120L3Q0S1NG by Onsemi

NXH100T120L3Q0S1NG

Onsemi

NXH100T120L3Q0S1NG by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.3V, and IC of 100A. Ideal for POWER CONTROL applications, it has a toff of 412ns and ton of 93ns. Operating temperature ranges from -40 °C to 175°C making it suitable for high-power systems.

100 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X20

4

20

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

328 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

412 ns

93 ns

2.3 V

FS100R12KT4PB11BPSA1 by Infineon Technologies

FS100R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;

ISOLATED

100 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-XUFM-X25

6

25

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

515 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

490 ns

185 ns

2.1 V