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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
PC28F128P30BF65A by Micron Technology

PC28F128P30BF65A

Micron Technology

Micron Technology's PC28F128P30BF65A is a 1.8V NOR Flash Memory with 8MX16 organization, operating from -40 to 85°C. Featuring 8388608 words and 134217728 bits memory density, it offers fast access time of 65ns for industrial applications requiring reliable non-volatile storage solutions.

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

W25Q64FVSFIG by Winbond Electronics

W25Q64FVSFIG

Winbond Electronics

W25Q64FVSFIG by Winbond Electronics is an 8MX8 flash memory IC with a memory density of 67108864 bit. It operates in synchronous mode with a max clock frequency of 104 MHz and features hardware/software write protection. This small outline package is ideal for industrial applications requiring reliable data storage and retrieval at temperatures ranging from -40 to 85 °C.

1

104 MHz

20

R-PDSO-G16

10.31 mm

67108864 bit

FLASH

8

1

16

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

Not Qualified

2.64 mm

SPI

.00005 Amp

3.6 V

3 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

7.49 mm

HARDWARE/SOFTWARE

PC28F00BM29EWHA by Micron Technology

PC28F00BM29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Data Polling: YES;

100 ns

8

YES

YES

YES

R-PBGA-B64

e1

13 mm

2147483648 bit

FLASH

16

1

2K

64

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00048 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

MX25L3235EZNI-10G by Macronix

MX25L3235EZNI-10G

Macronix

MX25L3235EZNI-10G by Macronix is a NOR flash memory with 8MX4 organization, SPI serial bus type, and 104 MHz clock frequency. Ideal for industrial applications requiring 33554432 bit memory density, it offers 100000 write/erase cycles endurance and operates at temperatures ranging from -40 to 85 °C.

IT ALSO CONFIGURED AS 32M X 1

2

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

33554432 bit

FLASH

4

3

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX4

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

.8 mm

SPI

.00004 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MX25L512EMI-10G by Macronix

MX25L512EMI-10G

Macronix

Macronix's MX25L512EMI-10G is a 256KX2 NOR flash memory with SPI serial bus, 104 MHz clock frequency, and 100000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage in compact devices.

1

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

FLASH

2

3

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX2

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

MX25L6435EXCI-10G by Macronix

MX25L6435EXCI-10G

Macronix

MX25L6435EXCI-10G by Macronix is a 3.3V NOR Flash Memory with 16Mx4 organization, SPI serial bus type, and 104MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K cycles, it offers a memory density of 67108864 bits in a compact GRID ARRAY package.

IT ALSO CONFIGURED AS 64M X 1

2

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

67108864 bit

FLASH

4

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3/3.3

2.7

Not Qualified

1.2 mm

SPI

Flash Memories

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

40

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25U12835FMI-10G by Macronix

MX25U12835FMI-10G

Macronix

Macronix MX25U12835FMI-10G is a 128Mb NOR flash memory with SPI interface, operating at 104MHz. It has 100K write/erase cycles and supports hardware/software write protection. Ideal for industrial applications requiring high endurance and low power consumption.

CAN BE ORGANISED AS 128 MBIT X 1

2

104 MHz

10

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.3 mm

134217728 bit

FLASH

4

3

1

16

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

1.8

Not Qualified

2.65 mm

SPI

.00002 Amp

Flash Memories

20 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

7.52 mm

HARDWARE/SOFTWARE

MX25U2033EM1I-12G by Macronix

MX25U2033EM1I-12G

Macronix

Macronix's MX25U2033EM1I-12G is a NOR flash memory with 512Mx4 organization, operating at 80MHz clock frequency. It features 100K write/erase cycles, SPI serial bus type, and industrial temperature grade. Ideal for applications requiring high endurance and fast data access in compact designs.

CAN BE ORGANISED AS 2 MBIT X 1

2

80 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

2147483648 bit

FLASH

4

3

1

8

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX4

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

1.8

Not Qualified

1.75 mm

SPI

.000008 Amp

Flash Memories

25 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

MX29GL128FHT2I-70G by Macronix

MX29GL128FHT2I-70G

Macronix

Macronix's MX29GL128FHT2I-70G is a 3V NOR flash memory with 8MX16 organization, 128 sectors, and 8388608 words. Operating at -40 to 85°C, it offers fast access time of 70ns and low standby current of 0.00003A. Ideal for industrial applications requiring reliable non-volatile memory with parallel interface.

70 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

3

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00003 Amp

Flash Memories

100 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

MX30LF1G08AA-TI by Macronix

MX30LF1G08AA-TI

Macronix

Macronix's MX30LF1G08AA-TI is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating at -40 to 85°C. It features a 2K word page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

1K

48

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

260

3/3.3

3.3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

JS28F128P33TF70A by Micron Technology

JS28F128P33TF70A

Micron Technology

Micron Technology's JS28F128P33TF70A is a NOR flash memory with 8MX16 organization, 8388608 words capacity, and 16K/64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring high-density memory with fast access speeds.

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

W25Q32FVSSIG by Winbond Electronics

W25Q32FVSSIG

Winbond Electronics

W25Q32FVSSIG by Winbond Electronics is a 32Mbit NOR flash memory with synchronous operation, SPI serial bus type, and 104MHz clock frequency. It is ideal for industrial applications requiring high endurance of 100K write/erase cycles and operates at temperatures ranging from -40 to 85°C.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

e3

5.28 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

PC28F00AG18FE by Micron Technology

PC28F00AG18FE

Micron Technology

Micron Technology's PC28F00AG18FE is a 64MX16 NOR flash memory with 512 sectors, operating at 1.8V. It features synchronous operation, AEC-Q100 screening, and industrial temperature grade. With a max access time of 96ns and memory density of 1073741824 bits, it is ideal for automotive applications requiring high-speed data storage in compact spaces.

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

512

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.000185 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F128G18FE by Micron Technology

PC28F128G18FE

Micron Technology

Micron Technology's PC28F128G18FE is a 1.8V NOR Flash Memory with 8MX16 organization, 128K sector size, and 8388608 words capacity. Operating in synchronous mode with a programming voltage of 2.7V, it offers fast access time of 96ns. Ideal for applications requiring high-density memory storage and common flash interface integration.

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

64

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-30 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

1.2 mm

128K

.000115 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F256G18FE by Micron Technology

PC28F256G18FE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

128

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.00013 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F512G18FE by Micron Technology

PC28F512G18FE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

96 ns

SUBGROUP FL1.8V

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

256

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.00016 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

N25Q128A11E1240E by Micron Technology

N25Q128A11E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11E1241E by Micron Technology

N25Q128A11E1241E

Micron Technology

Micron Technology's N25Q128A11E1241E is a 128M NOR flash memory with 108 MHz clock frequency, suitable for industrial applications. It operates at 1.8V, has 100000 write/erase cycles endurance, and uses SPI serial bus type. The package is rectangular in shape with a thin profile and terminal finish of tin silver copper.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11EF840E by Micron Technology

N25Q128A11EF840E

Micron Technology

Micron Technology's N25Q128A11EF840E is a NOR type Flash Memory with 128Mx1 organization, operating at 108MHz clock frequency. It has a small outline package style and is suitable for industrial temperature grade applications requiring high endurance of 100000 write/erase cycles.

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8

1.8

Not Qualified

1 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11ESE40G by Micron Technology

N25Q128A11ESE40G

Micron Technology

N25Q128A11ESE40G by Micron Technology is a NOR flash memory with 128Mx1 organization, operating at 108MHz. It features a programming voltage of 3V and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact form factors.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

1.8

3

Not Qualified

2.16 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q128A11ESF40G by Micron Technology

N25Q128A11ESF40G

Micron Technology

Micron Technology's N25Q128A11ESF40G is a NOR type Flash Memory with 128Mx1 organization, operating at 108MHz clock frequency. It has a small outline package style and supports SPI serial bus type for industrial applications. With 100000 write/erase cycles endurance, it offers high performance in a compact form factor.

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

1

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

1.8

Not Qualified

2.65 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

W25X10CLSNIG by Winbond Electronics

W25X10CLSNIG

Winbond Electronics

Winbond Electronics' W25X10CLSNIG is a 1MX1 NOR type flash memory with SPI serial bus, 104 MHz clock frequency, and 3V programming voltage. Ideal for industrial applications requiring high endurance, it offers 100K write/erase cycles and operates in a temperature range of -40 to 85°C.

IT ALSO OPERATES AT 2.3 V AT 80 MHZ

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

1048576 bit

FLASH

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.5/3.3

3

Not Qualified

1.75 mm

SPI

.000005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

W25Q32FVSFIG by Winbond Electronics

W25Q32FVSFIG

Winbond Electronics

Winbond Electronics' W25Q32FVSFIG is a 32M NOR Flash Memory with SPI interface. It operates at 3V, supports up to 104MHz clock frequency, and has 100K Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factors.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

33554432 bit

FLASH

1

1

16

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.64 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q32FVSSIQ by Winbond Electronics

W25Q32FVSSIQ

Winbond Electronics

W25Q32FVSSIQ by Winbond Electronics is a NOR type flash memory with 32Mx1 organization, SPI serial bus type, and 104 MHz clock frequency. It operates at temperatures ranging from -40 to 85°C and has a small outline package suitable for industrial applications. With 100000 write/erase cycles endurance, it is ideal for embedded systems requiring reliable non-volatile memory storage.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.23 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.23 mm

HARDWARE/SOFTWARE

W25Q32FVTCIG by Winbond Electronics

W25Q32FVTCIG

Winbond Electronics

W25Q32FVTCIG by Winbond Electronics is a NOR flash memory with 32Mx1 organization, operating at 104MHz clock frequency. It features hardware/software write protection and offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory with SPI serial bus interface.

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

33554432 bit

FLASH

1

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q32FVZEIG by Winbond Electronics

W25Q32FVZEIG

Winbond Electronics

Winbond Electronics' W25Q32FVZEIG is a 32M NOR Flash Memory with SPI interface, operating at up to 104 MHz. It features 100000 Write/Erase Cycles endurance and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed data transfer and reliable non-volatile memory storage.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

.8 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q32FVZPIG by Winbond Electronics

W25Q32FVZPIG

Winbond Electronics

Winbond Electronics' W25Q32FVZPIG is a 32M NOR flash memory with SPI serial bus, operating at 104 MHz. It has 100000 write/erase cycles endurance and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed data transfer and reliable non-volatile memory storage.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

.8 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

PC28F128P30TF65A by Micron Technology

PC28F128P30TF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

W25Q128FVAIG by Winbond Electronics

W25Q128FVAIG

Winbond Electronics

W25Q128FVAIG by Winbond Electronics is a 128Mbit NOR flash memory with synchronous operation, SPI serial bus type, and 104MHz clock frequency. It has a package size of 9.27mm x 7.62mm x 5.33mm and is ideal for industrial applications requiring high endurance with 100000 write/erase cycles.

104 MHz

20

100000 Write/Erase Cycles

R-PDIP-T8

9.27 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

3

Not Qualified

5.33 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOR TYPE

7.62 mm

HARDWARE/SOFTWARE

W25Q128FVEIG by Winbond Electronics

W25Q128FVEIG

Winbond Electronics

Winbond Electronics' W25Q128FVEIG is a 128Mbit NOR flash memory with SPI serial bus, operating at 104MHz. It has 100000 write/erase cycles endurance and supports hardware/software write protection. With a small outline package style, it's ideal for industrial applications requiring reliable data storage in temperatures ranging from -40 to 85°C.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

.8 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q128FVFIG by Winbond Electronics

W25Q128FVFIG

Winbond Electronics

Winbond Electronics' W25Q128FVFIG is a 128M NOR flash memory with SPI serial bus, operating at up to 104 MHz. It features hardware/software write protection and offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory with a small outline package style.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.31 mm

134217728 bit

FLASH

1

3

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.64 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q128FVFIQ by Winbond Electronics

W25Q128FVFIQ

Winbond Electronics

Winbond Electronics' W25Q128FVFIQ is a 128M NOR flash memory with SPI serial bus, 104 MHz clock frequency, and 100000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

134217728 bit

FLASH

1

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.64 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q128FVPIG by Winbond Electronics

W25Q128FVPIG

Winbond Electronics

W25Q128FVPIG by Winbond Electronics is a 128M NOR flash memory with SPI serial bus, operating at 104 MHz. It has a supply voltage of 2.7-3.6 V and endurance of 100K cycles. Ideal for industrial applications requiring fast data transfer and reliable non-volatile storage in compact devices.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

.8 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

W25Q128FVSIG by Winbond Electronics

W25Q128FVSIG

Winbond Electronics

W25Q128FVSIG by Winbond Electronics is a NOR flash memory with 128Mx1 organization, SPI serial bus type, and 104 MHz clock frequency. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3.6V. Ideal for industrial applications requiring high endurance with 100000 write/erase cycles.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

e3

5.28 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

W25Q128FVSIQ by Winbond Electronics

W25Q128FVSIQ

Winbond Electronics

Winbond Electronics' W25Q128FVSIQ is a 128Mbit NOR flash memory with SPI interface, operating at up to 104MHz. It has 100000 write/erase cycles endurance and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory with low standby current of 0.00002Amp.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

RC28F128J3F75G by Micron Technology

RC28F128J3F75G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

75 ns

8

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

10 mm

RC28F640P33BF60A by Micron Technology

RC28F640P33BF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

60 ns

BOTTOM

YES

YES

NO

R-PBGA-B64

e0

10 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

NOT SPECIFIED

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

8 mm

SST39VF3201-70-4C-EKE-T by Microchip Technology

SST39VF3201-70-4C-EKE-T

Microchip Technology

SST39VF3201-70-4C-EKE-T by Microchip: NOR flash memory, 2Mx16 organization, 1K sectors. Ideal for commercial applications requiring 3V supply voltage and 70°C max operating temp. Features include 100k write/erase cycles, 70ns access time, and asynchronous operation.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

1

1K

48

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST39VF3201-70-4I-EKE-T by Microchip Technology

SST39VF3201-70-4I-EKE-T

Microchip Technology

SST39VF3201-70-4I-EKE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time, and 100K cycles endurance. Ideal for industrial applications requiring fast, reliable non-volatile memory storage in a compact package. Supports asynchronous operation and features a common flash interface for easy integration.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

1

1K

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

PC28F640P30TF65B by Micron Technology

PC28F640P30TF65B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F512P30BFB by Micron Technology

PC28F512P30BFB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

100 ns

BOTTOM BOOT

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

4,511

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,20

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F512M29EWHG by Micron Technology

PC28F512M29EWHG

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

100 ns

8

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

RC28F256P30TFE by Micron Technology

RC28F256P30TFE

Micron Technology

Micron Technology's RC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous operation, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP

YES

YES

NO

R-PBGA-B64

e0

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC28F00AP30TFA by Micron Technology

RC28F00AP30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Technology: CMOS;

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

4,1023

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

235

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC28F256P30BFF by Micron Technology

PC28F256P30BFF

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

ASYNCHRONOUS READ MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

MX25L1606EXCI-12G by Macronix

MX25L1606EXCI-12G

Macronix

MX25L1606EXCI-12G by Macronix is a 16Mb NOR flash memory with SPI interface. It operates at 3V, supports up to 86MHz clock frequency, and has 100K write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory in a compact package.

1

86 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

16777216 bit

FLASH

8

1

24

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A13G1240E by Micron Technology

N25Q512A13G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A13GSF40G by Micron Technology

N25Q512A13GSF40G

Micron Technology

N25Q512A13GSF40G by Micron Technology is a NOR flash memory with 512Mx1 organization, operating at 108MHz clock frequency. It features hardware/software write protection and offers 100,000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage.

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

1

1

16

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE