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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST39SF010A-70-4I-WHE-T by Microchip Technology

SST39SF010A-70-4I-WHE-T

Microchip Technology

SST39SF010A-70-4I-WHE-T by Microchip: 128KX8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, featuring 100000 Write/Erase Cycles and 70 ns Access Time. Package style is small outline, thin profile with shrink pitch.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

e3

12.4 mm

1048576 bit

FLASH

8

3

1

1

32

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39VF3201C-70-4I-B3KE-T by Microchip Technology

SST39VF3201C-70-4I-B3KE-T

Microchip Technology

SST39VF3201C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications requiring high endurance (100K cycles) and fast data polling. Features 8 sectors, 2097152 words, and common flash interface for parallel programming.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF3202C-70-4I-B3KE-T by Microchip Technology

SST39VF3202C-70-4I-B3KE-T

Microchip Technology

SST39VF3202C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, featuring 100K cycles endurance and 2097152 words capacity in a compact GRID ARRAY package.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF6401B-70-4C-B1KE-T by Microchip Technology

SST39VF6401B-70-4C-B1KE-T

Microchip Technology

SST39VF6401B-70-4C-B1KE-T by Microchip: 3V NOR Flash Memory, 4Mx16 organization, 2K sectors. Ideal for commercial applications requiring fast access time and high endurance with a max operating temperature of 70°C.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

10 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

YES

NOR TYPE

8 mm

SST39VF6401B-70-4C-EKE-T by Microchip Technology

SST39VF6401B-70-4C-EKE-T

Microchip Technology

SST39VF6401B-70-4C-EKE-T by Microchip: NOR flash memory, 3V supply, 4Mx16 organization. Ideal for commercial applications with 100K write/erase cycles, 70ns access time, and 2K sector size.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST38VF6401-90-5I-B3KE-T by Microchip Technology

SST38VF6401-90-5I-B3KE-T

Microchip Technology

SST38VF6401-90-5I-B3KE-T by Microchip: 4MX16 NOR Flash Memory with 1K sectors, 4194304 words, and 100000 Write/Erase Cycles. Ideal for industrial applications requiring fast access time (90 ns) and low standby current (0.00003 Amp).

90 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

1

1K

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K

.00003 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F64G08AKCCBH2-10Z:C by Micron Technology

MT29F64G08AKCCBH2-10Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

16K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABAEAH4-ITX:E by Micron Technology

MT29F2G08ABAEAH4-ITX:E

Micron Technology

MT29F2G08ABAEAH4-ITX:E by Micron Technology is a 256MX8 SLC NAND flash memory with 2K sectors, 128K sector size, and 268M words. It operates at -40 to 85 °C, with 0.8mm terminal pitch and 0.0001A standby current. Ideal for industrial applications requiring fast access time and low power consumption.

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABBEAH4-ITX:E by Micron Technology

MT29F2G08ABBEAH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G08ABADAH4-ITX:D by Micron Technology

MT29F4G08ABADAH4-ITX:D

Micron Technology

MT29F4G08ABADAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors and 128K word sector size. Operating at -40 to 85°C, it has a peak reflow temp of 260°C and consumes max 35mA current. Ideal for industrial applications requiring fast access time of 25ns and high memory density of 4294967296 bits.

25 ns

YES

NO

R-PBGA-B63

e1

4294967296 bit

FLASH

8

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F8G16ADADAH4:D by Micron Technology

MT29F8G16ADADAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

8K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

3/3.3

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F32G08ABAAAWP-Z:A by Micron Technology

MT29F32G08ABAAAWP-Z:A

Micron Technology

Micron Technology's MT29F32G08ABAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 4GX8 organization, 8K page size, and 1M sector size. It operates b/w 0-70°C, has a memory density of 34359738368 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

34359738368 bit

FLASH

8

4K

48

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F32G08ABCABH1-10Z:A by Micron Technology

MT29F32G08ABCABH1-10Z:A

Micron Technology

Micron Technology's MT29F32G08ABCABH1-10Z:A is a 4GX8 SLC NAND flash memory with 4294967296 words capacity. It operates at temperatures from 0 to 70°C, with a max access time of 20 ns. Ideal for commercial applications requiring high memory density and low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AFAAAWP-Z:A by Micron Technology

MT29F64G08AFAAAWP-Z:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AECABH1-10ITZ:A by Micron Technology

MT29F64G08AECABH1-10ITZ:A

Micron Technology

MT29F64G08AECABH1-10ITZ:A by Micron Technology is an 8GX8 SLC NAND flash memory with 8K sectors. Operating at -40 to 85 °C, it has a memory density of 68719476736 bit and max access time of 20 ns. Ideal for industrial applications requiring fast, reliable data storage with low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10Z:A by Micron Technology

MT29F64G08AECABH1-10Z:A

Micron Technology

MT29F64G08AECABH1-10Z:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors and 1M word sector size. Operating at 0-70 °C, it has a max access time of 20 ns and consumes up to 50 mA current. Ideal for commercial applications requiring high memory density and fast data access.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABJ1-10Z:A by Micron Technology

MT29F64G08AECABJ1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 132; Technology: CMOS; Toggle Bit: NO; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

68719476736 bit

FLASH

8

8K

132

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA132,11X17,40

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-Z:A by Micron Technology

MT29F128G08AJAAAWP-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AKAAAC5-Z:A by Micron Technology

MT29F128G08AKAAAC5-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; Maximum Supply Current: 50 mA; Surface Mount: YES;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKAAAC5-ITZ:A by Micron Technology

MT29F128G08AKAAAC5-ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Ready or Busy: YES; Memory Width: 8;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10Z:A by Micron Technology

MT29F128G08AKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Page Size (words): 8K;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10ITZ:A by Micron Technology

MT29F128G08AKCABH2-10ITZ:A

Micron Technology

Micron Technology's MT29F128G08AKCABH2-10ITZ:A is a 16GX8 SLC NAND flash memory with 1M sector size and 8K page size. It operates at industrial temperature grade, with parallel interface and 100 terminals in a grid array package. Ideal for applications requiring high-speed data storage and retrieval.

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMAAAC5-Z:A by Micron Technology

MT29F128G08AMAAAC5-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; Command User Interface: YES; Parallel or Serial: PARALLEL;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMAAAC5-ITZ:A by Micron Technology

MT29F128G08AMAAAC5-ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Maximum Access Time: 20 ns; Type: SLC NAND TYPE;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10ITZ:A by Micron Technology

MT29F128G08AMCABH2-10ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8,3/3.3;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

260

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10Z:A by Micron Technology

MT29F128G08AMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABJ2-10Z:A by Micron Technology

MT29F128G08AMCABJ2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 132; Sector Size (Words): 1M; Page Size (words): 8K; Minimum Operating Temperature: 0 Cel;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

132

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA132,11X17,40

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO

SLC NAND TYPE

MT29F256G08AUAAAC5-ITZ:A by Micron Technology

MT29F256G08AUAAAC5-ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Data Polling: NO; Surface Mount: YES;

20 ns

YES

NO

274877906944 bit

FLASH

32K

52

85 Cel

-40 Cel

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10ITZ:A by Micron Technology

MT29F256G08AUCABH3-10ITZ:A

Micron Technology

Micron Technology's MT29F256G08AUCABH3-10ITZ:A is a SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates at temperatures from -40 to 85°C and has a max access time of 20 ns. Ideal for industrial applications requiring high-density memory with low standby current.

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10Z:A by Micron Technology

MT29F256G08AUCABH3-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABJ3-10Z:A by Micron Technology

MT29F256G08AUCABJ3-10Z:A

Micron Technology

MT29F256G08AUCABJ3-10Z:A by Micron Technology is a 1.8/3.3V SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates in commercial temperature grade with parallel interface and consumes max 50mA supply current. Ideal for applications requiring fast access time and low standby current.

20 ns

YES

NO

274877906944 bit

FLASH

32K

132

70 Cel

0 Cel

PLASTIC/EPOXY

BGA132,11X17,40

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO

SLC NAND TYPE

MT29F2G08ABBFAH4:F by Micron Technology

MT29F2G08ABBFAH4:F

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Toggle Bit: NO;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

N25Q064A13E14D0E by Micron Technology

N25Q064A13E14D0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

67108864 bit

FLASH

8

24

8388608 words

8M

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

BGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY

SERIAL

3/3.3

Not Qualified

SPI

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

M29W128GL70ZA6DE by Micron Technology

M29W128GL70ZA6DE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSH70N6E by Micron Technology

M29W128GSH70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 128;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

M29W128GSH70ZA6E by Micron Technology

M29W128GSH70ZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; No. of Words Code: 8M;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSH70ZS6E by Micron Technology

M29W128GSH70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; No. of Words: 8388608 words;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSL70N6E by Micron Technology

M29W128GSL70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .0001 Amp;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

M29W128GSL70ZA6E by Micron Technology

M29W128GSL70ZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Organization: 8MX16;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSL70ZS6E by Micron Technology

M29W128GSL70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Package Equivalence Code: BGA64,8X8,40;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

PC28F256P30TFE by Micron Technology

PC28F256P30TFE

Micron Technology

Micron Technology's PC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, 16K/64K sector sizes, and a common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

W25Q64CVSSIG by Winbond Electronics

W25Q64CVSSIG

Winbond Electronics

W25Q64CVSSIG by Winbond Electronics is a NOR flash memory with 8MX8 organization, operating at 80 MHz. It features a small outline package and SPI serial bus type, suitable for industrial applications requiring high endurance of 100000 Write/Erase cycles. With a max clock frequency of 80 MHz and low standby current of 0.000005 Amp, it offers reliable performance in various electronic devices.

8.5 ns

80 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.000005 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

SST39VF3202C-70-4I-B3KE by Microchip Technology

SST39VF3202C-70-4I-B3KE

Microchip Technology

SST39VF3202C-70-4I-B3KE by Microchip: 2MX16 Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, offers 100K write/erase cycles and operates in asynchronous mode.

70 ns

TOP BOOT-BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

3

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

N25Q128A13B1240E by Micron Technology

N25Q128A13B1240E

Micron Technology

N25Q128A13B1240E by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has a min data retention time of 20 years. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13BF840E by Micron Technology

N25Q128A13BF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13BSF40G by Micron Technology

N25Q128A13BSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q128A13TF840E by Micron Technology

N25Q128A13TF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

TOP

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13TSF40G by Micron Technology

N25Q128A13TSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Boot Block: TOP;

TOP

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE