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MX25L512EMI-10G

Macronix

MX25L512EMI-10G by Macronix

Macronix's MX25L512EMI-10G is a 256KX2 NOR flash memory with SPI serial bus, 104 MHz clock frequency, and 100000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage in compact devices.

Median Price

$0.726

Lifecycle Status

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Arrow

USA . 2,982 parts In-Stock

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Verical

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Chip Stock

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Rebound Electronics

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Classic Components Corporation

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IBS Electronics

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Cyclops Electronics Ltd

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NAC Semi

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Netsource Technology, Inc.

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ACDS - Activité Composants Distribution Service

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PC Components Company LLC

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Bristol Electronics

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Connector Distribution Corp

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Right Parts Inc.

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Ashlea Components Ltd

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Nova Conductors

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Inventory MP

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4 Star Electronics, Inc.

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Aztec Data Supply Inc.

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Corohmni

South Africa . 357 parts In-Stock

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AZTECH Wire

Italy . 671 parts In-Stock

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Argo Parts USA

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iodParts Technologies Inc.

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GreenTree Electronics

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Futuretech Components

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Glotronic Ltd.

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Speed Components Ltd (Excess)

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Overview

Enhance your electronics projects with the high-quality MX25L512EMI-10G Flash Memory by Macronix. As a leading manufacturer in the industry, Macronix delivers top-notch products that excel in performance and reliability. Ideal for various applications, this Flash Memory offers customers unbeatable value with its superior write/erase cycle endurance, wide temperature range, and easy integration thanks to its small outline package style. Upgrade your devices with Macronix's innovative technology and experience seamless operation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body makes this flash memory lightweight and durable, ideal for portable devices.

Surface Mount: YES

With surface mount capability, this flash memory is easy to integrate into compact electronic designs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular package shape of this flash memory allows for efficient use of PCB real estate, making it suitable for densely populated circuit boards.

Operating Mode: SYNCHRONOUS

Operating in synchronous mode ensures fast and reliable data transfer, making this flash memory a high-performance choice for demanding applications.

Nominal Supply Voltage / Vsup (V): 3

With a nominal supply voltage of 3V, this flash memory is energy-efficient and compatible with a wide range of electronics.

Power Supplies (V): 3/3.3

Supporting dual power supplies of 3V and 3.3V, this flash memory offers flexibility in different system configurations.

No. of Terminals: 8

The 8 terminals provide a secure and stable connection, ensuring reliable operation in varied environmental conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this flash memory simplifies PCB layout and contributes to an overall compact design.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand heat stress and maintain reliable performance in demanding environments.

Organization: 256KX2

The 256KX2 organization of this flash memory offers a high storage capacity, making it suitable for data-intensive applications.

Technical Specifications

Flash Memory MX25L512EMI-10G attributes and parameters. Explore more Flash Memory devices from Macronix

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

104 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

2

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX2

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MX25L512EMI-10G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Macronix

Macronix, a leading integrated device manufacturer in the Non-Volatile Memory (NVM) market, provides a full range of NOR Flash, NAND Flash, and ROM products. With its world-class R&D and manufacturing capability, Macronix continues to deliver high-quality, innovative and performance driven products to its customers in the consumer, communication, computing, industrial, automotive, networking and other segment markets. Macronix was established in 1989 in the Science Park, Hsinchu, Taiwan. Since its inception, Macronix is dedicated to developing top-notch home-grown technologies and improving its manufacturing capability to offer its customers high quality products and services. We have successfully established remarkable strategic alliances and long-lasting relationships with first tier world-class companies. Macronix has also been adhering to high standards of corporate governance, enhancing shareholders' rights and advocating social responsibilities. The Corporate Governance Association awarded Macronix with the CG6002 certification. Macronix was the first semiconductor manufacturer certified with Social Accountability International Standard (SA 8000: 2001) in Hsinchu Science Park.

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