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Microchip Technology Flash Memory 71

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST39SF010A-55-4C-NHE-T by Microchip Technology

SST39SF010A-55-4C-NHE-T

Microchip Technology

SST39SF010A-55-4C-NHE-T by Microchip Technology is a NOR type Flash Memory with 128Kx8 organization, operating at 5V. It offers 100000 Write/Erase cycles endurance, 55ns access time, and supports asynchronous operation. Ideal for applications requiring high-speed data storage in commercial temperature environments.

55 ns

YES

YES

100

100000 Write/Erase Cycles

R-PQCC-J32

13.97 mm

1048576 bit

FLASH

8

1

1

32

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.556 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

SST39SF040-55-4I-WHE-T by Microchip Technology

SST39SF040-55-4I-WHE-T

Microchip Technology

SST39SF040-55-4I-WHE-T by Microchip: 512Kx8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, offering 100000 Write/Erase Cycles and fast access time of 55 ns.

55 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

4194304 bit

FLASH

8

1

1

128

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39SF040-70-4C-WHE-T by Microchip Technology

SST39SF040-70-4C-WHE-T

Microchip Technology

SST39SF040-70-4C-WHE-T by Microchip: 512Kx8 NOR Flash Memory with 70°C max temp, 5V supply, and 70ns access time. Ideal for commercial applications requiring high endurance, featuring 100k Write/Erase cycles and a compact form factor of 12.4mm x 8mm.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

4194304 bit

FLASH

8

1

1

128

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39SF040-70-4I-WHE-T by Microchip Technology

SST39SF040-70-4I-WHE-T

Microchip Technology

SST39SF040-70-4I-WHE-T by Microchip: NOR flash memory with 512Kx8 organization, 128 sectors of 4K words each. Operating at -40 to 85°C, it offers fast access time of 70ns and endurance up to 100k cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

e3

12.4 mm

4194304 bit

FLASH

8

3

1

1

128

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

8 mm

SST39VF1601-70-4C-B3KE-T by Microchip Technology

SST39VF1601-70-4C-B3KE-T

Microchip Technology

SST39VF1601-70-4C-B3KE-T by Microchip Technology is a 1MX16 NOR flash memory with 512 sectors and 3V nominal voltage. It operates in asynchronous mode, has 100000 write/erase cycles endurance, and supports common flash interface. Ideal for applications requiring fast access time, such as embedded systems and consumer electronics.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

16777216 bit

FLASH

16

1

1

512

48

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39SF010A-70-4I-WHE-T by Microchip Technology

SST39SF010A-70-4I-WHE-T

Microchip Technology

SST39SF010A-70-4I-WHE-T by Microchip: 128KX8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, featuring 100000 Write/Erase Cycles and 70 ns Access Time. Package style is small outline, thin profile with shrink pitch.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

e3

12.4 mm

1048576 bit

FLASH

8

3

1

1

32

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39VF3201C-70-4I-B3KE-T by Microchip Technology

SST39VF3201C-70-4I-B3KE-T

Microchip Technology

SST39VF3201C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications requiring high endurance (100K cycles) and fast data polling. Features 8 sectors, 2097152 words, and common flash interface for parallel programming.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF3202C-70-4I-B3KE-T by Microchip Technology

SST39VF3202C-70-4I-B3KE-T

Microchip Technology

SST39VF3202C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, featuring 100K cycles endurance and 2097152 words capacity in a compact GRID ARRAY package.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF6401B-70-4C-B1KE-T by Microchip Technology

SST39VF6401B-70-4C-B1KE-T

Microchip Technology

SST39VF6401B-70-4C-B1KE-T by Microchip: 3V NOR Flash Memory, 4Mx16 organization, 2K sectors. Ideal for commercial applications requiring fast access time and high endurance with a max operating temperature of 70°C.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

10 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

YES

NOR TYPE

8 mm

SST39VF6401B-70-4C-EKE-T by Microchip Technology

SST39VF6401B-70-4C-EKE-T

Microchip Technology

SST39VF6401B-70-4C-EKE-T by Microchip: NOR flash memory, 3V supply, 4Mx16 organization. Ideal for commercial applications with 100K write/erase cycles, 70ns access time, and 2K sector size.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST38VF6401-90-5I-B3KE-T by Microchip Technology

SST38VF6401-90-5I-B3KE-T

Microchip Technology

SST38VF6401-90-5I-B3KE-T by Microchip: 4MX16 NOR Flash Memory with 1K sectors, 4194304 words, and 100000 Write/Erase Cycles. Ideal for industrial applications requiring fast access time (90 ns) and low standby current (0.00003 Amp).

90 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

1

1K

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K

.00003 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF3202C-70-4I-B3KE by Microchip Technology

SST39VF3202C-70-4I-B3KE

Microchip Technology

SST39VF3202C-70-4I-B3KE by Microchip: 2MX16 Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, offers 100K write/erase cycles and operates in asynchronous mode.

70 ns

TOP BOOT-BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

3

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39LF401C-55-4C-B3KE by Microchip Technology

SST39LF401C-55-4C-B3KE

Microchip Technology

SST39LF401C-55-4C-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 100000 Write/Erase Cycles. Operating at 3.3V, it offers fast access time of 55ns and features a parallel interface for high-speed data transfer. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

55 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39LF402C-55-4C-B3KE by Microchip Technology

SST39LF402C-55-4C-B3KE

Microchip Technology

SST39LF402C-55-4C-B3KE by Microchip: 256Kx16 NOR Flash Memory with 70°C max temp, 55ns access time, and 100k Write/Erase cycles. Ideal for commercial applications requiring fast data access and high endurance.

55 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39VF402C-70-4I-B3KE by Microchip Technology

SST39VF402C-70-4I-B3KE

Microchip Technology

SST39VF402C-70-4I-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 3V nominal voltage. It features 100,000 write/erase cycles, operates in industrial temperature range (-40 to 85°C), and has a max access time of 70ns. Ideal for applications requiring fast, reliable non-volatile memory storage in compact electronic devices.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST25VF016B-75-4I-S2AF-T by Microchip Technology

SST25VF016B-75-4I-S2AF-T

Microchip Technology

SST25VF016B-75-4I-S2AF-T by Microchip: 16MX1 NOR Flash Memory with 80MHz clock, SPI serial bus. Ideal for industrial applications, offers 100000 Write/Erase cycles and operates at -40 to 85 °C.

80 MHz

100

100000 Write/Erase Cycles

S-PDSO-G8

e4

5.275 mm

16777216 bit

FLASH

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOR TYPE

5.275 mm

HARDWARE/SOFTWARE

SST25VF032B-66-4I-S2AF-T by Microchip Technology

SST25VF032B-66-4I-S2AF-T

Microchip Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Endurance: 100000 Write/Erase Cycles;

80 MHz

100

100000 Write/Erase Cycles

S-PDSO-G8

e4

5.275 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOR TYPE

5.275 mm

HARDWARE/SOFTWARE

SST25VF032B-80-4I-S2AF-T by Microchip Technology

SST25VF032B-80-4I-S2AF-T

Microchip Technology

SST25VF032B-80-4I-S2AF-T by Microchip: NOR Flash Memory, 80MHz clock, 30mA supply current. Ideal for industrial applications requiring high-speed data storage with 100k write/erase cycles and SPI serial bus interface.

80 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e4

33554432 bit

FLASH

8

8

4194304 words

4M

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

Not Qualified

SPI

.00002 Amp

Flash Memories

30 mA

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOR TYPE

HARDWARE/SOFTWARE

SST39VF040-70-4C-NHE-T by Microchip Technology

SST39VF040-70-4C-NHE-T

Microchip Technology

SST39VF040-70-4C-NHE-T by Microchip Technology is a 512Kx8 NOR flash memory chip with 128 sectors of 4K words each. Operating at 3V, it offers fast access time of 70ns and endurance up to 100,000 write/erase cycles. Ideal for commercial applications requiring reliable data storage in a compact chip carrier package.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

3

1

1

128

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3/3.3

3

Not Qualified

3.556 mm

4K

.000015 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

SST39VF3201-70-4C-EKE-T by Microchip Technology

SST39VF3201-70-4C-EKE-T

Microchip Technology

SST39VF3201-70-4C-EKE-T by Microchip: NOR flash memory, 2Mx16 organization, 1K sectors. Ideal for commercial applications requiring 3V supply voltage and 70°C max operating temp. Features include 100k write/erase cycles, 70ns access time, and asynchronous operation.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

1

1K

48

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST39VF3201-70-4I-EKE-T by Microchip Technology

SST39VF3201-70-4I-EKE-T

Microchip Technology

SST39VF3201-70-4I-EKE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time, and 100K cycles endurance. Ideal for industrial applications requiring fast, reliable non-volatile memory storage in a compact package. Supports asynchronous operation and features a common flash interface for easy integration.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

1

1K

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST25PF020B-80-4C-QAE by Microchip Technology

SST25PF020B-80-4C-QAE

Microchip Technology

SST25PF020B-80-4C-QAE by Microchip Technology is a NOR type Flash Memory with 2MX1 organization, SPI serial bus type, and 80 MHz clock frequency. It is used for applications requiring 100000 write/erase cycles, such as consumer electronics and industrial automation.

80 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

2097152 bit

FLASH

1

1

1

8

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2.5/3.3

Not Qualified

.8 mm

SPI

.00003 Amp

Flash Memories

30 mA

3.6 V

2.3 V

YES

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST38VF6401B-70I/TV by Microchip Technology

SST38VF6401B-70I/TV

Microchip Technology

SST38VF6401B-70I/TV by Microchip: 4MX16 Flash Memory with 128 Sectors, 3V Operating Voltage. Ideal for industrial applications, offers 100000 Write/Erase Cycles and fast access time of 70ns. Supports NOR type interface with 4194304 words capacity in a small outline package.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

3/3.3

3

Not Qualified

YES

TS 16949

1.2 mm

32K

.00004 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST26VF064BA-104I/MF by Microchip Technology

SST26VF064BA-104I/MF

Microchip Technology

SST26VF064BA-104I/MF by Microchip is a 64M NOR flash memory with SPI serial bus, 104 MHz clock frequency, and 100000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage in a compact package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016B-104I/MF by Microchip Technology

SST26WF016B-104I/MF

Microchip Technology

SST26WF016B-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications with -40 to 85 °C temp range, offering 100000 Write/Erase cycles and 16777216 bit memory density.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016B-104I/SN by Microchip Technology

SST26WF016B-104I/SN

Microchip Technology

SST26WF016B-104I/SN by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 1.8V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BA-104I/MF by Microchip Technology

SST26WF016BA-104I/MF

Microchip Technology

SST26WF016BA-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring 100K write/erase cycles, operating b/w -40 to 85 °C with a supply voltage range of 1.65V to 1.95V.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BA-104I/SN by Microchip Technology

SST26WF016BA-104I/SN

Microchip Technology

SST26WF016BA-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance and 100000 write/erase cycles.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BAT-104I/MF by Microchip Technology

SST26WF016BAT-104I/MF

Microchip Technology

SST26WF016BAT-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring high endurance, with 100K write/erase cycles and operating temp range of -40 to 85°C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BAT-104I/SN by Microchip Technology

SST26WF016BAT-104I/SN

Microchip Technology

SST26WF016BAT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and operating temperature range of -40 to 85°C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BT-104I/CS by Microchip Technology

SST26WF016BT-104I/CS

Microchip Technology

SST26WF016BT-104I/CS by Microchip: NOR flash memory with 16Mx1 organization, operates at 104MHz clock frequency. Ideal for industrial applications, offers 100K write/erase cycles and SPI serial bus type for high-speed data transfer. Operating range from -40 to 85°C ensures reliable performance in various environments.

104 MHz

100

100000 Write/Erase Cycles

e1

16777216 bit

FLASH

1

1

1

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

SERIAL

1.8

TS 16949

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

CMOS

INDUSTRIAL

TIN SILVER COPPER

NOR TYPE

HARDWARE/SOFTWARE

SST26WF016BT-104I/MF by Microchip Technology

SST26WF016BT-104I/MF

Microchip Technology

SST26WF016BT-104I/MF by Microchip: NOR Flash Memory, 16MX1 organization, SPI serial bus type. Ideal for industrial applications with -40 to 85 °C operating temp range. Features 104 MHz clock frequency and 100000 write/erase cycles endurance.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BT-104I/SN by Microchip Technology

SST26WF016BT-104I/SN

Microchip Technology

SST26WF016BT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and low standby current of 0.000005Amp.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF032B-104I/TD by Microchip Technology

SST26VF032B-104I/TD

Microchip Technology

SST26VF032B-104I/TD by Microchip: 3V supply, 104MHz clock freq, SPI serial bus. Ideal for industrial applications requiring EEPROM memory with 100K write/erase cycles and -40 to 85°C operating range. Compact package with 24 terminals, suitable for thin profile designs.

104 MHz

100

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

EEPROM

8

3

1

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

AEC-Q100

1.2 mm

SPI

.000045 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

SST25WF080B-40I/SN by Microchip Technology

SST25WF080B-40I/SN

Microchip Technology

SST25WF080B-40I/SN by Microchip: 8MX1 organization, 40MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring 8388608-bit memory density and 100000 write/erase cycles endurance.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST25WF080BT-40I/SN by Microchip Technology

SST25WF080BT-40I/SN

Microchip Technology

SST25WF080BT-40I/SN by Microchip: 8MX1 flash memory with 8388608 bit density, operates at 40 MHz clock frequency. Ideal for industrial applications requiring 100000 Write/Erase cycles, SPI serial bus interface, and -40 to 85 °C temperature range.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST26VF016BEUI-104I/SN by Microchip Technology

SST26VF016BEUI-104I/SN

Microchip Technology

SST26VF016BEUI-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring 100K write/erase cycles, with 3V supply voltage and -40 to 85°C operating temp range.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-C48

4.89 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

LSOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

SERIAL

3

TS 16949

1.68 mm

SPI

.000025 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF032BEUI-104I/SM by Microchip Technology

SST26VF032BEUI-104I/SM

Microchip Technology

SST26VF032BEUI-104I/SM by Microchip: 32MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles and 3V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

5.26 mm

33554432 bit

FLASH

1

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3

TS 16949

2.03 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

SST39SF010A-70-4C-WHE-T by Microchip Technology

SST39SF010A-70-4C-WHE-T

Microchip Technology

SST39SF010A-70-4C-WHE-T by Microchip is a NOR flash memory with 128Kx8 organization, operating at 5V. It offers 100000 Write/Erase cycles, 70ns access time, and supports asynchronous mode. Ideal for applications requiring fast data access and reliable non-volatile storage in commercial temperature environments.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

1048576 bit

FLASH

8

1

1

32

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

SST26VF016BT-104V/SM by Microchip Technology

SST26VF016BT-104V/SM

Microchip Technology

SST26VF016BT-104V/SM by Microchip: NOR Flash Memory, 16Mx1 organization, SPI serial bus type. Ideal for industrial applications with -40 to 105°C operating temp range. Features 104MHz clock frequency and 100K write/erase cycles endurance.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

5.26 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100

2.03 mm

SPI

.000025 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

SST26VF032B-104V/MF by Microchip Technology

SST26VF032B-104V/MF

Microchip Technology

SST26VF032B-104V/MF by Microchip: NOR Flash Memory, 3V supply, 104MHz clock freq. Ideal for industrial applications requiring high endurance EEPROM with SPI interface and 4Mx8 organization.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

33554432 bit

EEPROM

8

1

1

8

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

AEC-Q100

.8 mm

SPI

.000045 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26VF064B-104V/SO by Microchip Technology

SST26VF064B-104V/SO

Microchip Technology

SST26VF064B-104V/SO by Microchip is a 64M NOR flash memory with 100000 Write/Erase Cycles. Operating at 3V, it offers a max clock frequency of 104 MHz and supports SPI serial bus type. Ideal for industrial applications requiring reliable data storage in a compact package style.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.3 mm

67108864 bit

FLASH

1

3

1

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

AEC-Q100

2.65 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

SST26VF064BT-104V/MF by Microchip Technology

SST26VF064BT-104V/MF

Microchip Technology

SST26VF064BT-104V/MF by Microchip: NOR flash memory with 64Mx1 organization, SPI serial bus type, and 104 MHz clock frequency. Ideal for industrial applications requiring high endurance, operating b/w -40 to 105 °C with 100000 write/erase cycles.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

AEC-Q100

.8 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26VF064BT-104V/SO by Microchip Technology

SST26VF064BT-104V/SO

Microchip Technology

SST26VF064BT-104V/SO by Microchip: 64MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 67108864 bit memory density.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.3 mm

67108864 bit

FLASH

1

3

1

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

AEC-Q100

2.65 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

SST25PF040CT-40I/MF by Microchip Technology

SST25PF040CT-40I/MF

Microchip Technology

SST25PF040CT-40I/MF by Microchip Technology is a NOR type Flash Memory with 4Mx1 organization, operating at 3.3V and up to 40MHz clock frequency. It features SPI serial bus, 100K write/erase cycles endurance, and -40 to 85°C temperature range. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

40 MHz

20

100000 Write/Erase Cycles

S-PDSO-N10

e3

3 mm

4194304 bit

FLASH

1

1

1

10

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC10,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

TS 16949

1 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.5 mm

DUAL

NOR TYPE

3 mm

SOFTWARE

SST26WF040B-104I/SN by Microchip Technology

SST26WF040B-104I/SN

Microchip Technology

SST26WF040B-104I/SN by Microchip: NOR Flash Memory, 4Mx1 organization, SPI serial bus type. Operating at 104MHz with 1.8V programming voltage. Ideal for industrial applications requiring high endurance and fast data transfer speeds.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

4194304 bit

FLASH

1

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF080B-104I/MF by Microchip Technology

SST26WF080B-104I/MF

Microchip Technology

SST26WF080B-104I/MF by Microchip: 8MX1 NOR Flash Memory with 104 MHz clock, SPI interface. Operating at -40 to 85 °C, it offers 100K cycles endurance for industrial applications. Features include 8388608 bit density, 1.65-1.95 V supply voltage, and 0.8 mm seated height in a small outline package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF064C-104I/MF by Microchip Technology

SST26WF064C-104I/MF

Microchip Technology

SST26WF064C-104I/MF by Microchip Technology is a 64MX1 NOR flash memory with 104 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and fast data transfer in a compact package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000015 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE