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SST26VF016BT-104V/SM

Microchip Technology

SST26VF016BT-104V/SM by Microchip Technology

SST26VF016BT-104V/SM by Microchip: NOR Flash Memory, 16Mx1 organization, SPI serial bus type. Ideal for industrial applications with -40 to 105°C operating temp range. Features 104MHz clock frequency and 100K write/erase cycles endurance.

Median Price

$2.320

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 4,200 parts In-Stock

1+ parts

$2.320

100+ parts

$2.100

1k+ parts

$1.890

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4,200

$2.320

$2.100

$1.890

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Vyrian

USA . 8,286 parts In-Stock

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8,286

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ComSIT Distribution GmbH

Germany . 1,991 parts In-Stock

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1,991

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Nova Conductors

Japan . 85 parts In-Stock

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85

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,222 parts In-Stock

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$2.440

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$2.440

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Corohmni

South Africa . 354 parts In-Stock

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$4.188

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354

$4.188

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AZTECH Wire

Italy . 767 parts In-Stock

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$17.216

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767

$17.216

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Ampacity Inc.

Singapore . 324 parts In-Stock

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$28.000

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324

$28.000

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Fulton Briggs Corp.

USA . 8,395 parts In-Stock

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8,395

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Continental Prestige Electronics

USA . 1,785 parts In-Stock

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Argo Parts USA

USA . 556 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Unlock the power of reliable and high-performance flash memory with Microchip Technology's SST26VF016BT-104V/SM. Designed to meet the stringent quality standards of AEC-Q100, this small outline package offers 16Mx1 organization for seamless operation in industrial applications. With a maximum clock frequency of 104 MHz and endurance of 100,000 write/erase cycles, this NOR-type memory device ensures smooth data transmission and long-lasting performance. Trust in Microchip's expertise to deliver top-notch memory solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory chip, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, making for efficient assembly in electronic devices.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard voltage level of 3V ensures compatibility with a wide range of electronic systems.

Output Characteristics: 3-STATE

3-state output allows for multiple devices to share the same bus line, increasing flexibility and efficiency in data transfer.

Temperature Grade: INDUSTRIAL

Designed to operate in industrial temperature ranges, making it suitable for use in harsh industrial environments.

Endurance: 100000 Write/Erase Cycles

High endurance ensures reliability and longevity of the flash memory chip, making it ideal for applications that require frequent read/write operations.

Memory IC Type: FLASH

Flash memory technology offers fast access times and non-volatile storage, making it a popular choice for storing program data in electronic devices.

Technical Specifications

Flash Memory SST26VF016BT-104V/SM attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

104 MHz

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.26 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

2.03 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000025 Amp

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

5.25 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

SST26VF016BT-104V/SM Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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