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VFBGA Flash Memory 146

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MX25U12835FBBI-10G by Macronix

MX25U12835FBBI-10G

Macronix

Macronix's MX25U12835FBBI-10G is a 128Mb flash memory with synchronous operation, 104MHz clock frequency, and industrial temperature grade. Ideal for applications requiring high-speed data transfer and reliable storage in harsh environments.

IT CAN ALSO BE CONFIGURABLE AS 128MX1

2

104 MHz

R-PBGA-B23

134217728 bit

FLASH

4

1

23

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

1.8

.52 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

W29N01HZBINA by Winbond Electronics

W29N01HZBINA

Winbond Electronics

W29N01HZBINA by Winbond Electronics is a 128MX8 SLC NAND flash memory with 1.8V programming voltage. Operating in industrial temperature range (-40 to 85 °C), it offers high memory density of 1073741824 bits for parallel applications. The package style is grid array, very thin profile, fine pitch, making it suitable for various embedded systems and storage solutions.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

IS34ML01G081-BLI by Integrated Silicon Solution

IS34ML01G081-BLI

Integrated Silicon Solution

IS34ML01G081-BLI by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface for industrial applications. Measuring 11mm x 9mm x 1mm, this memory IC features a grid array package with very thin profile and fine pitch terminals.

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

3

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

SLC NAND TYPE

9 mm

MT29F4G08ABBDAH4-ITX:D by Micron Technology

MT29F4G08ABBDAH4-ITX:D

Micron Technology

MT29F4G08ABBDAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors, operating at 1.8V. It features a very thin profile grid array package, suitable for industrial applications requiring fast access times of 25ns and low standby current of 0.00005Amp.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G08ABADAH4-AITX:D by Micron Technology

MT29F4G08ABADAH4-AITX:D

Micron Technology

Micron Technology's MT29F4G08ABADAH4-AITX:D is a 512MX8 SLC NAND flash memory with 4294967296 bit density. Operating at 3.3V, it has a programming voltage of 1.8V and supports industrial temperature grade applications. With a compact size of 11mm x 9mm x 1mm, this flash memory features parallel interface and very thin profile package for high-speed data storage solutions.

R-PBGA-B63

11 mm

4294967296 bit

FLASH

8

1

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABADAH4-ITX:D by Micron Technology

MT29F1G08ABADAH4-ITX:D

Micron Technology

MT29F1G08ABADAH4-ITX:D by Micron Technology is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating from -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBEAH4-IT:E by Micron Technology

MT29F1G16ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11 mm;

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

IS21ES04G-JCLI-TR by Integrated Silicon Solution

IS21ES04G-JCLI-TR

Integrated Silicon Solution

IS21ES04G-JCLI-TR by Integrated Silicon Solution is a synchronous flash memory with 4GX8 organization, 34359738368 bit memory density, and operates at industrial temperature grade. It features a very thin profile grid array package with 153 terminals and is suitable for applications requiring high-speed data storage in industrial environments.

R-PBGA-B153

13 mm

34359738368 bit

FLASH

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

IS21ES08G-JCLI-TR by Integrated Silicon Solution

IS21ES08G-JCLI-TR

Integrated Silicon Solution

IS21ES08G-JCLI-TR by Integrated Silicon Solution is an 8GX8 flash memory with 68719476736 bit density. Operating at 3.3V, it features a very thin profile grid array package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed synchronous flash memory with parallel interface.

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC16GAKAEJP-4MIT by Micron Technology

MTFC16GAKAEJP-4MIT

Micron Technology

MTFC16GAKAEJP-4MIT by Micron Technology is a 16GX8 Flash Memory with 17179869184 words capacity. Operating in synchronous mode, it has a memory width of 8 and memory density of 137438953472 bit. Ideal for industrial applications, this very thin profile package offers parallel programming with a terminal pitch of 0.5 mm.

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAKAEJP-4MIT by Micron Technology

MTFC32GAKAEJP-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm;

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

EM04APGD4-BA000-2 by Delkin Devices

EM04APGD4-BA000-2

Delkin Devices

Delkin Devices' EM04APGD4-BA000-2 is a Flash Memory with 4GX8 organization, 34359738368 bit memory density, and operates at 3.3V. Ideal for industrial applications, it features a very thin profile GRID ARRAY package with 153 terminals and can withstand temperatures from -40 to 85 °C.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

EM04APYD3-BA000-2 by Delkin Devices

EM04APYD3-BA000-2

Delkin Devices

Delkin Devices' EM04APYD3-BA000-2 is a 4GX8 flash memory card with 34359738368 bit memory density. Operating at 3.3V, it features a very thin profile and fine pitch design for industrial applications. With a temperature range of -40 to 85 °C, this rectangular package offers synchronous operation in parallel mode.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC2GMDEA-0MWTA by Micron Technology

MTFC2GMDEA-0MWTA

Micron Technology

MTFC2GMDEA-0MWTA by Micron Technology is a 2GX8 flash memory with 17179869184 bit density. Operating at 52 MHz, it has a very thin profile and fine pitch package style suitable for synchronous applications. With a voltage range of 2.7V to 3.6V, it is ideal for high-speed data storage in electronic devices.

ALSO HAVING MMC CONTROLLER

52 MHz

R-PBGA-B153

e2

13 mm

17179869184 bit

FLASH

8

1

153

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

30

11.5 mm

MT29F2G16ABBEAH4-IT:E by Micron Technology

MT29F2G16ABBEAH4-IT:E

Micron Technology

MT29F2G16ABBEAH4-IT:E by Micron Technology is a 128MX16 SLC NAND flash memory with 1.8V supply, operating from -40 to 85°C. It features a 1K word page size, 64K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G01AAADDH4-ITX:D by Micron Technology

MT29F1G01AAADDH4-ITX:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-ITX:D is a 1GX1 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it offers synchronous mode and supports up to 50MHz clock frequency. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

SFEM008GB1EA1TO-I-GE-111-STD by Swissbit Ag

SFEM008GB1EA1TO-I-GE-111-STD

Swissbit Ag

Swissbit Ag's SFEM008GB1EA1TO-I-GE-111-STD is a Flash Memory with 8GX8 organization, MLC NAND type, and 68719476736 bit memory density. It has a very thin profile, fine pitch GRID ARRAY package style suitable for applications requiring high memory capacity in compact spaces. Operating temperature ranges from -40 to 85 °C making it versatile for various environments.

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-4MITTR by Micron Technology

MTFC4GACAJCN-4MITTR

Micron Technology

Micron Technology's MTFC4GACAJCN-4MITTR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at up to 52 MHz, it features a very thin profile and fine pitch grid array package suitable for industrial applications. With a wide temperature range (-40 to 85 °C), this synchronous memory offers high performance in compact dimensions.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

SST25VF080B-50-4I-ZCE by Microchip Technology

SST25VF080B-50-4I-ZCE

Microchip Technology

SST25VF080B-50-4I-ZCE by Microchip Technology is a serial flash memory with 8Mx1 organization and 8388608-bit memory density. It operates in synchronous mode with a max clock frequency of 50 MHz. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

50 MHz

100

100000 Write/Erase Cycles

S-PBGA-B16

2 mm

8388608 bit

FLASH

1

1

1

16

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

VFBGA

BGA16,4X2,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

.4 mm

SPI

.00003 Amp

30 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOR TYPE

2 mm

HARDWARE/SOFTWARE

MX25U51245GBFI0A by Macronix

MX25U51245GBFI0A

Macronix

Macronix MX25U51245GBFI0A is a 64MX8 NOR flash memory with 166 MHz clock frequency, 1.8V programming voltage, and SPI serial bus type. Ideal for applications requiring high-speed synchronous operation, such as automotive electronics and industrial control systems.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B68

536870912 bit

FLASH

8

1

68

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X10,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

1.8

.44 mm

SPI

.00005 Amp

40 mA

2 V

1.65 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

MTFC8GAKAJCN-4MITTR by Micron Technology

MTFC8GAKAJCN-4MITTR

Micron Technology

Micron Technology's MTFC8GAKAJCN-4MITTR is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 52 MHz clock frequency, suitable for industrial applications. The package style is grid array with very thin profile and fine pitch, making it ideal for compact electronic devices.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC64GAPALGT-AIT by Micron Technology

MTFC64GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA153,14X14,20;

200 MHz

5

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GAPALGT-AAT by Micron Technology

MTFC32GAPALGT-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

200 MHz

5

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAMALGT-AIT by Micron Technology

MTFC8GAMALGT-AIT

Micron Technology

MTFC8GAMALGT-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a very thin profile, fine pitch package style suitable for industrial applications. With a memory density of 68719476736 bits and AEC-Q100 screening level, it offers reliable performance in automotive electronics.

200 MHz

5

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAMALGT-AAT by Micron Technology

MTFC8GAMALGT-AAT

Micron Technology

Micron Technology's MTFC8GAMALGT-AAT is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 105°C max operating temp. Ideal for industrial applications requiring high-speed data storage in compact devices due to its fine pitch grid array package and low power consumption.

200 MHz

5

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GAPALGT-AIT by Micron Technology

MTFC32GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

200 MHz

5

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GAZAQJP-AIT by Micron Technology

MTFC128GAZAQJP-AIT

Micron Technology

MTFC128GAZAQJP-AIT by Micron Technology is a 128GX8 NAND flash memory with 1.8V programming voltage, operating at up to 200MHz clock frequency. It is designed for industrial applications requiring high memory density and operates in synchronous mode with a temperature range of -40 to 85°C.

200 MHz

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

AEC-Q100

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GAZAQHD-AIT by Micron Technology

MTFC64GAZAQHD-AIT

Micron Technology

Micron Technology's MTFC64GAZAQHD-AIT is a 64GX8 NAND flash memory with 68719476736 words capacity. Operating at 200 MHz, it has a low profile of 0.9 mm and supports industrial temperature grade applications. With a package style of GRID ARRAY, it offers high memory density and synchronous operation for various electronic devices.

200 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

AEC-Q100

.9 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GASAQJP-AIT by Micron Technology

MTFC128GASAQJP-AIT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm; Maximum Supply Voltage (Vsup): 3.6 V;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

1 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GASAQJP-AAT by Micron Technology

MTFC128GASAQJP-AAT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Data Polling: NO;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

1 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GASAQHD-AAT by Micron Technology

MTFC64GASAQHD-AAT

Micron Technology

MTFC64GASAQHD-AAT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 200 MHz, it offers synchronous operation and a very thin profile package style. Ideal for automotive applications due to AEC-Q104 screening level and wide temperature range from -40°C to 105°C.

200 MHz

NO

NO

1

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC32GASAQHD-AIT by Micron Technology

MTFC32GASAQHD-AIT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q104; Command User Interface: NO;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GASAQHD-AIT by Micron Technology

MTFC64GASAQHD-AIT

Micron Technology

Micron Technology's MTFC64GASAQHD-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it suits applications requiring high-speed data storage. With AEC-Q104 screening and -40 to 85 °C temp range, it's ideal for automotive electronics.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GASAQHD-AAT by Micron Technology

MTFC32GASAQHD-AAT

Micron Technology

Micron's MTFC32GASAQHD-AAT is a 32GX8 NAND flash memory with 34359738368 words. Operating in synchronous mode at up to 200 MHz, it offers a memory density of 274877906944 bits. Ideal for applications requiring high-speed data storage and retrieval in automotive electronics due to AEC-Q104 screening level.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GAZAQHD-WT by Micron Technology

MTFC64GAZAQHD-WT

Micron Technology

MTFC64GAZAQHD-WT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating in synchronous mode, it has a package style of GRID ARRAY, suitable for applications requiring high-speed data storage. With a very thin profile and fine pitch, it offers parallel operation at temperatures ranging from -25 to 85 °C.

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

SFEM032GB1EA1TO-I-HG-12P-STD by Swissbit Ag

SFEM032GB1EA1TO-I-HG-12P-STD

Swissbit Ag

Swissbit Ag's SFEM032GB1EA1TO-I-HG-12P-STD is a 32GX8 SLC NAND flash memory with 20000 Write/Erase Cycles endurance. Operating at 3.3V, it offers 34359738368 words capacity and supports up to 200 MHz clock frequency. Ideal for applications requiring high-speed synchronous memory in compact form factors.

200 MHz

NO

NO

1

20000 Write/Erase Cycles

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

SLC NAND TYPE

11.5 mm

MT29F1G08ABBEAH4-ITX:E by Micron Technology

MT29F1G08ABBEAH4-ITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-ITX:E is a 128Mx8 SLC NAND flash memory with 1.8V supply voltage, operating from -40 to 85°C. Featuring 100K write/erase cycles, it has a page size of 2K words and sector size of 128K words. Ideal for applications requiring high endurance and reliable data storage in compact devices.

NO

YES

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

YES

SLC NAND TYPE

9 mm

S29GL256S10GHB010 by Infineon Technologies

S29GL256S10GHB010

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit; Parallel or Serial: PARALLEL;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

8

3

1

256

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

S29GL128S10GHB010 by Infineon Technologies

S29GL128S10GHB010

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES; No. of Words: 16777216 words;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

BOTTOM/TOP

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

134217728 bit

FLASH

8

3

1

128

56

16777216 words

16M

ASYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

S29GL256S10GHB013 by Infineon Technologies

S29GL256S10GHB013

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 100 ns; Programming Voltage (V): 3;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

8

3

1

256

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

MT29F8G08ADADAH4-IT:DTR by Micron Technology

MT29F8G08ADADAH4-IT:DTR

Micron Technology

Micron Technology's MT29F8G08ADADAH4-IT:DTR is a 3.3V SLC NAND flash memory with 1GX8 organization, offering 2K page size and 128K sector size. It features a very thin profile grid array package suitable for applications requiring high endurance of up to 100,000 write/erase cycles. Operating in asynchronous mode, it has a max temperature of 85°C and min of -40°C, making it ideal for various industrial and automotive uses.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

YES

1 mm

128K

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

ASFC8G31M-51BIN by Alliance Memory

ASFC8G31M-51BIN

Alliance Memory

ASFC8G31M-51BIN by Alliance Memory is a 3V, 200MHz synchronous flash memory with 8GX8 organization and MLC NAND type. It features a very thin profile, fine pitch grid array package suitable for applications requiring high-speed data storage in compact spaces. With a wide operating temperature range of -40 to 85 °C, it is ideal for industrial and automotive electronics.

200 MHz

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

ASFC4G31M-51BINTR by Alliance Memory

ASFC4G31M-51BINTR

Alliance Memory

Alliance Memory's ASFC4G31M-51BINTR is a 3V, 4GX8 MLC NAND flash memory with 200MHz clock frequency. With 34359738368-bit density and 4294967296 words, it's ideal for high-speed data storage applications. Featuring a very thin profile and fine pitch grid array package, it operates b/w -40°C to 85°C.

200 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

S29GL064S90BHI040 by Infineon Technologies

S29GL064S90BHI040

Infineon Technologies

FLASH; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; No. of Words Code: 4M;

90 ns

8

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B48

8.15 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3

YES

TS 16949

1 mm

64K

.0001 Amp

80 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6.15 mm

60 ms

HARDWARE/SOFTWARE

THGAMVT0T43BAIR by Kioxia Holdings

THGAMVT0T43BAIR

Kioxia Holdings

Kioxia Holdings' THGAMVT0T43BAIR is a NAND flash memory with 128GX8 organization, operating at 52 MHz clock frequency. It features a package style of GRID ARRAY, very thin profile, and fine pitch. Suitable for applications requiring high-speed data storage in compact devices due to its synchronous operation and 1.8V programming voltage.

3.3V SUPPLY IS ALSO AVAILABLE

52 MHz

YES

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

.00104 Amp

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

EM32FQYHY-BA000-2 by Delkin Devices

EM32FQYHY-BA000-2

Delkin Devices

Delkin Devices' EM32FQYHY-BA000-2 is a 32GX8 TLC NAND flash memory with 3.3V programming voltage and 85°C max temp. Ideal for hardware write protection, it features a compact rectangular package style with 153 terminals in a grid array layout for various applications requiring high-density memory storage.

NO

NO

R-PBGA-B156

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

TLC NAND TYPE

11.5 mm

HARDWARE

MTFC4GMXEA-WT by Micron Technology

MTFC4GMXEA-WT

Micron Technology

MTFC4GMXEA-WT by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating at 52 MHz, it has a low profile of 0.8 mm and supports hardware write protection. Ideal for embedded MMC applications, this synchronous memory features a very thin grid array package with 153 terminals.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

Embedded MMC

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC8GLXEA-WT by Micron Technology

MTFC8GLXEA-WT

Micron Technology

MTFC8GLXEA-WT by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 1.8V programming voltage. It is used in embedded MMC applications due to its 68719476736 bit memory density and synchronous operation mode.

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

Embedded MMC

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE