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VFBGA Flash Memory 146

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F1G08ABBDAHC:D by Micron Technology

MT29F1G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAH4-IT:D by Micron Technology

MT29F1G16ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAH4:D by Micron Technology

MT29F1G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAHC-IT:D by Micron Technology

MT29F1G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAHC:D by Micron Technology

MT29F1G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F2G01AAAEDH4-ITX:E by Micron Technology

MT29F2G01AAAEDH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B63;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G08ABBEAH4-AITX:E by Micron Technology

MT29F1G08ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications due to its very thin profile and fine pitch grid array package style.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABAEAH4-AITX:E by Micron Technology

MT29F1G08ABAEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABAEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel programming with 0.8mm terminal pitch. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G16ABBEAH4-AITX:E by Micron Technology

MT29F1G16ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G16ABBEAH4-AITX:E is a 64MX16 SLC NAND flash memory with 1073741824-bit density. Operating at 1.8V, it features a very thin profile package style and industrial temperature grade suitability. Ideal for applications requiring high-speed parallel data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G01AAAEDH4-IT:E by Micron Technology

MT29F2G01AAAEDH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MTFC4GMDEA-1MWT by Micron Technology

MTFC4GMDEA-1MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC16GJDEC-2MWT by Micron Technology

MTFC16GJDEC-2MWT

Micron Technology

Micron Technology's MTFC16GJDEC-2MWT is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a voltage range of 2.7V to 3.6V and operates in parallel mode. With a compact size of 14mm x 18mm, it is suitable for applications requiring high-speed data storage and retrieval in devices like smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B169

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GJDED-3MWT by Micron Technology

MTFC32GJDED-3MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

52 MHz

NO

NO

R-PBGA-B169

18 mm

274877906944 bit

FLASH CARD

8

1

169

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC4GLDEA-0MWT by Micron Technology

MTFC4GLDEA-0MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC8GLDEA-1MWT by Micron Technology

MTFC8GLDEA-1MWT

Micron Technology

MTFC8GLDEA-1MWT by Micron Technology is a 3.3V MLC NAND Flash Memory with 8GX8 organization, operating at up to 52 MHz clock frequency. It features a very thin profile, fine pitch grid array package and is suitable for applications requiring high memory density and parallel operation in devices with limited space constraints.

52 MHz

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MT29F1G08ABBEAH4-IT:E by Micron Technology

MT29F1G08ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MX25R6435FBDIL0 by Macronix

MX25R6435FBDIL0

Macronix

Macronix's MX25R6435FBDIL0 is a 16MX4 flash memory with 16777216 words and 67108864 bit memory density. Operating at 1.8V, it supports synchronous mode up to 33 MHz clock frequency for industrial applications. With a very thin profile and fine pitch grid array package, it offers reliable performance in various electronic devices.

ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT

2

33 MHz

R-PBGA-B22

e1

67108864 bit

FLASH

4

3

1

22

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

3

.52 mm

3.6 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

MX25R8035FBDIL0 by Macronix

MX25R8035FBDIL0

Macronix

Macronix's MX25R8035FBDIL0 is a 8-terminal, 1.8V synchronous flash memory with 2Mx4 organization and 104MHz clock frequency. Ideal for industrial applications, it offers a memory density of 8388608 bits in a very thin profile grid array package.

IT IS ALSO CONFIGURED AS 8M X 1

2

104 MHz

R-PBGA-B8

8388608 bit

FLASH

4

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

1.8

.52 mm

3.6 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

NOT SPECIFIED

MT29F2G08ABBEAHC:E by Micron Technology

MT29F2G08ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MX25R3235FBDIL0 by Macronix

MX25R3235FBDIL0

Macronix

Macronix's MX25R3235FBDIL0 is a NOR flash memory with 4MX8 organization, 80 MHz clock frequency, and SPI serial bus. It operates at -40 to 85 °C, has 100000 Write/Erase Cycles endurance, and is ideal for industrial applications requiring high-speed data storage.

2

80 MHz

20

100000 Write/Erase Cycles

R-PBGA-B12

33554432 bit

FLASH

8

1

12

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA12,5X7,14/8

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

1.8

.52 mm

SPI

.000024 Amp

6 mA

3.6 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.35 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

HARDWARE/SOFTWARE

S40410081B1B1I000 by Cypress Semiconductor

S40410081B1B1I000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1I000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at -40 to 85 °C, it has a supply voltage range of 2.7-3.6 V and features synchronous operation for industrial applications.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410081B1B1W000 by Cypress Semiconductor

S40410081B1B1W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1W000 is a synchronous flash memory with 8GX8 organization, MLC NAND type, and 68719476736-bit memory density. It operates at 3V with a temperature range of -25 to 85 °C. Suitable for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B1I010 by Cypress Semiconductor

S40410161B1B1I010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1I010 is a 16GX8 MLC NAND Flash Memory with 17179869184 words capacity. Operating at -40 to 85 °C, it has a supply voltage range of 2.7V to 3.6V for industrial applications. This rectangular package features a very thin profile, fine pitch grid array design suitable for synchronous operations in various electronic devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B1W010 by Cypress Semiconductor

S40410161B1B1W010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1W010 is a 16GX8 MLC NAND flash memory with 17179869184 words. Operating at 3V, it has a memory density of 137438953472 bits and supports synchronous mode. With a very thin profile and fine pitch grid array package, it is ideal for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-4MIT by Micron Technology

MTFC4GACAJCN-4MIT

Micron Technology

MTFC4GACAJCN-4MIT by Micron Technology is a 4GX8 MLC NAND flash memory with 34359738368 bit density. Operating at -40 to 85 °C, it has a clock frequency of 52 MHz and supports parallel interface. Ideal for industrial applications requiring high-speed data storage in compact devices.

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC8GAKAJCN-4MIT by Micron Technology

MTFC8GAKAJCN-4MIT

Micron Technology

MTFC8GAKAJCN-4MIT by Micron Technology is a 8GX8 MLC NAND flash memory with 52 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and has a memory density of 68719476736 bit. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MT28EW128ABA1HPN-0SIT by Micron Technology

MT28EW128ABA1HPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

70 ns

8

R-PBGA-B56

e1

9 mm

134217728 bit

FLASH

16

1

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NOR TYPE

7 mm

MT28EW128ABA1LPN-0SIT by Micron Technology

MT28EW128ABA1LPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

70 ns

8

R-PBGA-B56

e1

9 mm

134217728 bit

FLASH

16

1

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NOR TYPE

7 mm

MT28EW256ABA1HPN-0SIT by Micron Technology

MT28EW256ABA1HPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOR TYPE

7 mm

MT28EW256ABA1LPN-0SIT by Micron Technology

MT28EW256ABA1LPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

70 ns

8

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1HPN-0SIT by Micron Technology

MT28EW512ABA1HPN-0SIT

Micron Technology

MT28EW512ABA1HPN-0SIT by Micron Technology is a 32MX16 flash memory IC with 33554432 words. It operates at 3V, has a very thin profile, and offers a max access time of 95ns. Ideal for industrial applications requiring high-density parallel memory solutions.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1LPN-0SIT by Micron Technology

MT28EW512ABA1LPN-0SIT

Micron Technology

Micron Technology's MT28EW512ABA1LPN-0SIT is a Flash Memory with 32MX16 organization, 8-bit width, and 33554432 words. Operating at -40 to 85 °C, it has a very thin profile package style suitable for industrial applications requiring fast access times of up to 95 ns.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7 mm

MT29F2G08ABAEAH4-AATX:E by Micron Technology

MT29F2G08ABAEAH4-AATX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAWP-AATX:E by Micron Technology

MT29F2G08ABAEAWP-AATX:E

Micron Technology

Micron Technology's MT29F2G08ABAEAWP-AATX:E is a 256MX8 SLC NAND flash memory with 2K sectors. Operating at 3.3V, it offers fast access time of 25ns and industrial temperature grade. With a package style of GRID ARRAY, it is suitable for applications requiring high-speed data storage in harsh environments.

25 ns

YES

NO

R-PBGA-B63

e3

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

TSSOP48,.8,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3/3.3

3.3

Not Qualified

YES

AEC-Q100

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G08ABBEAH4:ETR by Micron Technology

MT29F2G08ABBEAH4:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G16ABDHC:DTR by Micron Technology

MT29F2G16ABDHC:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

16

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F2G16ABDHC-ET:DTR by Micron Technology

MT29F2G16ABDHC-ET:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

16

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F4G01AAADDHC-ITX:DTR by Micron Technology

MT29F4G01AAADDHC-ITX:DTR

Micron Technology

Micron Technology's MT29F4G01AAADDHC-ITX:DTR is a 3.3V SLC NAND Flash Memory with 4294967296-bit density, operating at up to 50MHz clock frequency. Ideal for industrial applications, it features a very thin profile grid array package and operates in synchronous mode.

50 MHz

R-PBGA-B63

e1

13 mm

4294967296 bit

FLASH

1

1

63

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G01AAADDH4-IT:DTR by Micron Technology

MT29F1G01AAADDH4-IT:DTR

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:DTR is a 3.3V SLC NAND Flash Memory with 1073741824-bit memory density. Operating at up to 50MHz, it features a very thin profile grid array package and is suitable for industrial applications requiring high-speed synchronous operation.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G08ABADAH4:DTR by Micron Technology

MT29F1G08ABADAH4:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAH4-ITX:ETR by Micron Technology

MT29F2G08ABAEAH4-ITX:ETR

Micron Technology

Micron Technology's MT29F2G08ABAEAH4-ITX:ETR is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3.3V, it offers industrial-grade temperature range of -40 to 85 °C. Suitable for applications requiring high-speed parallel memory access in compact devices.

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MTFC16GAKAECN-4MIT by Micron Technology

MTFC16GAKAECN-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

IS21ES04G-JCLI by Integrated Silicon Solution

IS21ES04G-JCLI

Integrated Silicon Solution

IS21ES04G-JCLI by Integrated Silicon Solution is a 4GX8 Flash Memory with 3.3V programming voltage and 85°C max operating temp. Ideal for industrial applications, it features a very thin profile grid array package with 153 terminals and operates in synchronous mode.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

IS21ES08G-JCLI by Integrated Silicon Solution

IS21ES08G-JCLI

Integrated Silicon Solution

IS21ES08G-JCLI by Integrated Silicon Solution is a 3.3V synchronous flash memory with 8GX8 organization, operating at up to 200MHz clock frequency. Ideal for industrial applications, this MLC NAND type memory offers a memory density of 68719476736 bits and features a very thin profile grid array package with fine pitch terminals.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH

8

3

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES16G-JCLI by Integrated Silicon Solution

IS21ES16G-JCLI

Integrated Silicon Solution

IS21ES16G-JCLI by Integrated Silicon Solution is a 16GX8 Flash Memory with synchronous operation and a max clock frequency of 200 MHz. It has a memory density of 137438953472 bit and is suitable for industrial applications.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH

8

3

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES32G-JCLI by Integrated Silicon Solution

IS21ES32G-JCLI

Integrated Silicon Solution

IS21ES32G-JCLI by Integrated Silicon Solution is a 32GX8 MLC NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a very thin profile grid array package suitable for industrial applications requiring high memory density and a wide operating temperature range from -40°C to 85°C.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH

8

3

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS22ES04G-JCLA1 by Integrated Silicon Solution

IS22ES04G-JCLA1

Integrated Silicon Solution

IS22ES04G-JCLA1 by Integrated Silicon Solution is a 4GX8 flash memory with 3.3V programming voltage and operates synchronously at -40 to 85°C. With a package style of GRID ARRAY, it's ideal for industrial applications requiring high memory density and reliability in harsh environments.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

AEC-Q100

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

MT29F1G16ABBEAHC:E by Micron Technology

MT29F1G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm