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VFBGA Flash Memory 146

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
PZ28F032M29EWBA by Micron Technology

PZ28F032M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

65 ns

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F032M29EWHA by Micron Technology

PZ28F032M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 25 mA;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

64

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWBA by Micron Technology

PZ28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

60 ns

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWHA by Micron Technology

PZ28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWLA by Micron Technology

PZ28F064M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 6 mm;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWLX by Micron Technology

PZ28F064M29EWLX

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 65 ns;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWTA by Micron Technology

PZ28F064M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

65 ns

8

TOP

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

YES

NOR TYPE

6 mm

PZ28F064M29EWTX by Micron Technology

PZ28F064M29EWTX

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

65 ns

8

TOP

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F2G08ABBEAH4:E by Micron Technology

MT29F2G08ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAHC:E by Micron Technology

MT29F2G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 2147483648 bit;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G08ABBDAHC:D by Micron Technology

MT29F4G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABADAH4-IT:D by Micron Technology

MT29F4G16ABADAH4-IT:D

Micron Technology

MT29F4G16ABADAH4-IT:D by Micron Technology is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in industrial temperatures (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAH4:D by Micron Technology

MT29F4G16ABADAH4:D

Micron Technology

Micron Technology's MT29F4G16ABADAH4:D is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in asynchronous mode with a max access time of 25ns. Ideal for commercial applications requiring fast data storage and retrieval in compact devices.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABBDAH4:D by Micron Technology

MT29F4G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F4G16ABBDAHC-IT:D by Micron Technology

MT29F4G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 25 ns;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABBDAHC:D by Micron Technology

MT29F4G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F8G08ADBDAH4-IT:D by Micron Technology

MT29F8G08ADBDAH4-IT:D

Micron Technology

MT29F8G08ADBDAH4-IT:D by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, operating in industrial temperature range. Featuring 2K word page size and 128K word sector size, it offers fast access time of 25ns for applications requiring high-speed data storage and retrieval. With a low standby current of 0.00005A, it is suitable for power-sensitive devices.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F8G08ADBDAH4:D by Micron Technology

MT29F8G08ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADADAH4-IT:D by Micron Technology

MT29F8G16ADADAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3.3;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADBDAH4-IT:D by Micron Technology

MT29F8G16ADBDAH4-IT:D

Micron Technology

MT29F8G16ADBDAH4-IT:D by Micron is a 512MX16 SLC NAND flash memory with 1.8V supply, 85°C max temp, and 25ns access time. Ideal for industrial applications requiring fast, reliable data storage in a compact GRID ARRAY package.

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAH4-IT:DTR by Micron Technology

MT29F1G08ABBDAH4-IT:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

25 ns

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABBFAH4-IT:F by Micron Technology

MT29F2G08ABBFAH4-IT:F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F2G08ABBEAHC:ETR by Micron Technology

MT29F2G08ABBEAHC:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MTFC16GJVEC-4MIT by Micron Technology

MTFC16GJVEC-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

R-PBGA-B169

e1

18 mm

FLASH CARD

1

169

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

.8 mm

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

14 mm

MT29F1G08ABCHC:C by Micron Technology

MT29F1G08ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G08ABCHCET:C by Micron Technology

MT29F1G08ABCHCET:C

Micron Technology

Micron Technology's MT29F1G08ABCHCET:C is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it offers industrial-grade temperature range of -40 to 85 °C. With parallel interface and very thin profile, it suits applications requiring high-speed data storage in compact devices.

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHC:C by Micron Technology

MT29F1G16ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHCET:C by Micron Technology

MT29F1G16ABCHCET:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G08ABBDAH4-IT:D by Micron Technology

MT29F1G08ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MTFC16GJDEC-4MIT by Micron Technology

MTFC16GJDEC-4MIT

Micron Technology

Micron Technology's MTFC16GJDEC-4MIT is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 52MHz clock frequency. It features a very thin profile grid array package suitable for industrial applications requiring high-speed data storage and retrieval.

52 MHz

R-PBGA-B169

e1

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F16G08ADACAH4-IT:C by Micron Technology

MT29F16G08ADACAH4-IT:C

Micron Technology

MT29F16G08ADACAH4-IT:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

8

1

8K

63

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

4K

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAH4:E by Micron Technology

MT29F2G16ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAH4:ETR by Micron Technology

MT29F2G16ABBEAH4:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAH4-ITX:D by Micron Technology

MT29F1G08ABBDAH4-ITX:D

Micron Technology

Micron Technology's MT29F1G08ABBDAH4-ITX:D is a 128MX8 SLC NAND flash memory with 1.8V programming voltage, 1K sectors, and 100000 write/erase cycles. It operates in industrial temperature grades, has a package style of GRID ARRAY, and is suitable for applications requiring high endurance and reliability.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

HARDWARE

MX25U3235FBAI-10G by Macronix

MX25U3235FBAI-10G

Macronix

Macronix MX25U3235FBAI-10G is a 32Mb Flash Memory with 104MHz clock frequency, operating at -40 to 85°C. Ideal for industrial applications, it features a synchronous mode, 1.8V supply voltage, and serial interface in a compact grid array package.

ALSO IT CAN BE CONFIGURED AS 32M X 1 BIT

2

104 MHz

R-PBGA-B12

e1

33554432 bit

FLASH

4

3

1

12

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

1.8

.48 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MX30LF2G18AC-XKI by Macronix

MX30LF2G18AC-XKI

Macronix

Macronix's MX30LF2G18AC-XKI is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3V, it has an industrial temperature grade of -40 to 85°C. With a very thin profile and fine pitch grid array package, it is suitable for high-performance applications requiring reliable non-volatile memory storage.

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G01AAADDH4-IT:D by Micron Technology

MT29F1G01AAADDH4-IT:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:D is a 1GX1 SLC NAND Flash Memory with 1073741824 bit memory density. It operates at 3.3V, has a clock frequency of 50 MHz, and supports serial communication. This industrial-grade memory chip is ideal for applications requiring high-speed data storage in compact devices.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MTFC4GLDEA-0MWTTR by Micron Technology

MTFC4GLDEA-0MWTTR

Micron Technology

Micron Technology's MTFC4GLDEA-0MWTTR is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. With a compact rectangular package style and very thin profile, it is ideal for applications requiring high-speed synchronous operation in devices such as smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MT28EW256ABA1HPN-0SITTR by Micron Technology

MT28EW256ABA1HPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 9 mm; Nominal Supply Voltage / Vsup (V): 3;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

MT28EW256ABA1LPN-0SITTR by Micron Technology

MT28EW256ABA1LPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 7 mm; Maximum Standby Current: .000135 Amp;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

IS22TF32G-JCLA2 by Integrated Silicon Solution

IS22TF32G-JCLA2

Integrated Silicon Solution

IS22TF32G-JCLA2 by Integrated Silicon Solution is a 32GX8 TLC NAND flash memory with 3.3V programming voltage, 200 MHz clock frequency, and 105°C max operating temp. Ideal for applications requiring high-speed data storage in automotive electronics due to AEC-Q100 screening level and compact grid array package design.

200 MHz

R-PBGA-B153

13 mm

274877906944 bit

FLASH

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

3.3

AEC-Q100

1 mm

.00003 Amp

55 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

TLC NAND TYPE

11.5 mm

HARDWARE/SOFTWARE

MTFC8GAKAJCN-1MWT by Micron Technology

MTFC8GAKAJCN-1MWT

Micron Technology

MTFC8GAKAJCN-1MWT by Micron Technology is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates at 3.3V, has a temperature range of -25 to 85 °C, and uses synchronous mode. Ideal for applications requiring high memory capacity in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NO

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-1MWT by Micron Technology

MTFC4GACAJCN-1MWT

Micron Technology

MTFC4GACAJCN-1MWT by Micron Technology is a 4GX8 MLC NAND flash memory with 3.3V supply voltage, operating at -25 to 85 °C. It features a grid array package style, open-drain output, and very thin profile for applications requiring high-density storage in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MT29F16G16ADBCAH4-IT:C by Micron Technology

MT29F16G16ADBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

30 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

16

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

MLC NAND TYPE

9 mm

MT29F1G08ABAFAH4-ITE:F by Micron Technology

MT29F1G08ABAFAH4-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAH4-ITE:F is a 128MX8 SLC NAND flash memory with 1073741824 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABADAH4-IT:D by Micron Technology

MT29F1G08ABADAH4-IT:D

Micron Technology

MT29F1G08ABADAH4-IT:D by Micron Technology is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAH4:D by Micron Technology

MT29F1G08ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAHC-IT:D by Micron Technology

MT29F1G08ABBDAHC-IT:D

Micron Technology

MT29F1G08ABBDAHC-IT:D by Micron Technology is a 128MX8 SLC NAND flash memory with 1.8V supply, operating from -40 to 85 °C. It features a 2K word page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm