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TSOP1 Flash Memory 177

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT28F008B5VG-8B by Micron Technology

MT28F008B5VG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8TET by Micron Technology

MT28F008B5VG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 1M;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8T by Micron Technology

MT28F008B5VG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F800B5WG-8BET by Micron Technology

MT28F800B5WG-8BET

Micron Technology

MT28F800B5WG-8BET by Micron Technology is a NOR type Flash Memory with 512Kx16 organization, operating at 5V. It features 80ns max access time, 524288 words capacity, and industrial temperature grade. Ideal for applications requiring fast data access and reliable non-volatile memory storage in harsh environments.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8B by Micron Technology

MT28F800B5WG-8B

Micron Technology

MT28F800B5WG-8B by Micron Technology is a NOR flash memory with 512KX16 organization, operating at 5V. It features 524288 words, 8388608 bit memory density, and 0.000005 Amp standby current. Ideal for commercial applications requiring fast access time and parallel interface.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8TET by Micron Technology

MT28F800B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8T by Micron Technology

MT28F800B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

AT29C010A-12TC by Atmel

AT29C010A-12TC

Atmel

AT29C010A-12TC by Atmel is a NOR type flash memory with an organization of 128Kx8 and a memory density of 1,048,576 bits. It operates asynchronously at a nominal voltage of 5V and has a max access time of 120ns. This flash memory is commonly used in applications that require non-volatile storage for data or program code.

120 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

3

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C040A-12TC by Atmel

AT29C040A-12TC

Atmel

Atmel's AT29C040A-12TC is a 512Kx8 NOR flash memory with 256-word page size, operating at 5V. It features 3-state output and asynchronous mode, suitable for commercial applications requiring fast access time of 120ns and low standby current of 0.0001Amp.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

240

5

5

Not Qualified

1.2 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

MT28F400B5WG-8BET by Micron Technology

MT28F400B5WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8B by Micron Technology

MT28F400B5WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8TET by Micron Technology

MT28F400B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Command User Interface: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8T by Micron Technology

MT28F400B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

INPUTS & OUTPUTS FULLY TTL COMPATIBLE; CONFG 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

235

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

12 mm

AT49BV1614-90TI by Atmel

AT49BV1614-90TI

Atmel

AT49BV1614-90TI by Atmel is a 1MX16 NOR flash memory with 3V supply, operating at -40 to 85°C. It features asynchronous mode, 90ns access time, and 8K/32K/64K sector sizes. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact package.

90 ns

8

BOTTOM

YES

YES

R-PDSO-G48

e0

18.4 mm

16777216 bit

FLASH

16

1

8,2,30

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

3

Not Qualified

YES

1.2 mm

8K,32K,64K

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49F040-12TI by Atmel

AT49F040-12TI

Atmel

AT49F040-12TI by Atmel is a 512KX8 NOR flash memory with 3-STATE output, operating at 5V. It features industrial temperature grade, parallel interface, and bottom boot block. Ideal for applications requiring fast access time of 120ns, such as embedded systems and industrial automation.

120 ns

BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; 10000 WRITE CYCLES

BOTTOM

YES

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

1,1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

16K,496K

.0003 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M28W320CT90N6 by STMicroelectronics

M28W320CT90N6

STMicroelectronics

M28W320CT90N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 90 ns access time, operating b/w -40 °C to 85°C. It features an asynchronous mode and supports dual terminal positioning for efficient surface mounting. Ideal for industrial applications requiring reliable data storage.

90 ns

TOP BOOT BLOCK

TOP

YES

YES

NO

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3,3/3.3

3

Not Qualified

1.2 mm

4K,32K

.000005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M29W040B55N1 by STMicroelectronics

M29W040B55N1

STMicroelectronics

M29W040B55N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and 55 ns max access time. It supports up to 100K write/erase cycles, ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in designs.

55 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B70N1 by STMicroelectronics

M29W040B70N1

STMicroelectronics

M29W040B70N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports up to 100K write/erase cycles, making it ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B90N1 by STMicroelectronics

M29W040B90N1

STMicroelectronics

M29W040B90N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100K write/erase cycles, making it ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

MT28F004B5VG-8BET by Micron Technology

MT28F004B5VG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

80 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F004B5VG-8TET by Micron Technology

MT28F004B5VG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 8;

80 ns

TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

AT45DB642-TI by Atmel

AT45DB642-TI

Atmel

Atmel's AT45DB642-TI is a 64Mbit NOR Flash Memory with 3V nominal voltage. Operating in synchronous mode, it offers industrial temperature grade and parallel/serial interface. Ideal for applications requiring high memory density and reliable data storage in compact devices.

ORGANISED AS 8192 PAGES OF 1056 BYTES EACH

R-PDSO-G40

e0

18.4 mm

67108864 bit

FLASH

1

3

1

40

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL/SERIAL

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NOR TYPE

10 mm

M50FW040N1 by STMicroelectronics

M50FW040N1

STMicroelectronics

STMicroelectronics M50FW040N1 is a 512Kx8 NOR Flash Memory with 3.3V supply, operating at 0-70 °C. It features synchronous operation, parallel interface, and GULL WING terminals. Ideal for applications requiring fast access times and high memory density in compact designs.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

AT45DB081B-TC by Atmel

AT45DB081B-TC

Atmel

Atmel's AT45DB081B-TC is a 3V NOR Flash Memory with 1081344X8 organization, SPI serial bus type, and 20MHz clock frequency. Ideal for applications requiring high-speed data transfer and low power consumption in compact electronic devices.

ORGANIZED AS 4096 PAGES OF 264 BYTES EACH

20 MHz

R-PDSO-G28

e0

11.8 mm

8650752 bit

FLASH

8

3

1

28

1081344 words

1081344

SYNCHRONOUS

70 Cel

0 Cel

1081344X8

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

240

3/3.3

2.7

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.55 mm

DUAL

NOR TYPE

8 mm

HARDWARE

M50FW080N1 by STMicroelectronics

M50FW080N1

STMicroelectronics

STMicroelectronics M50FW080N1 is a 3.3V NOR Flash Memory with 1MX8 organization, 16 sectors of 64K words each, and operates synchronously at up to 70 °C. It is suitable for commercial applications requiring fast access times (11ns) and low standby current (0.0001A), with a compact rectangular package design for surface mounting.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FW080N5 by STMicroelectronics

M50FW080N5

STMicroelectronics

M50FW080N5 by STMicroelectronics is a 3.3V NOR Flash Memory with 1MX8 organization, 16 sectors of 64K words each, and operates synchronously at a max temperature of 85 °C. It is ideal for applications requiring fast access times, such as embedded systems and consumer electronics.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

TC58NVG3S0FTA00 by Toshiba

TC58NVG3S0FTA00

Toshiba

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 1GX8;

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

MT29F1G08ABADAWP:D by Micron Technology

MT29F1G08ABADAWP:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP:D is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in asynchronous mode. It features a page size of 2K words and sector size of 128K words, suitable for commercial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

1K

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

M29F016D70N6 by STMicroelectronics

M29F016D70N6

STMicroelectronics

M29F016D70N6 from STMicroelectronics is a 2M x 8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features a max access time of 70 ns and operates in asynchronous mode. With a temp range of -40 °C to 85°C, it's perfect for harsh environments.

70 ns

YES

YES

YES

R-PDSO-G40

e0

18.4 mm

16777216 bit

FLASH

8

1

32

40

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

10 mm

MT28F004B3VG-8B by Micron Technology

MT28F004B3VG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Boot Block: BOTTOM;

80 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F400B3WG-8BET by Micron Technology

MT28F400B3WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8B by Micron Technology

MT28F400B3WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8TET by Micron Technology

MT28F400B3WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP48,.8,20;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8T by Micron Technology

MT28F400B3WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M29F080D70N6 by STMicroelectronics

M29F080D70N6

STMicroelectronics

M29F080D70N6 from STMicroelectronics is a NOR flash memory with 1M x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85°C, making it ideal for industrial applications. Its compact SOIC package ensures efficient surface mounting.

70 ns

YES

YES

YES

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

10 mm

M29F800DB55N1 by STMicroelectronics

M29F800DB55N1

STMicroelectronics

M29F800DB55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB55N6 by STMicroelectronics

M29F800DB55N6

STMicroelectronics

M29F800DB55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N1 by STMicroelectronics

M29F800DB70N1

STMicroelectronics

M29F800DB70N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and a max access time of 70ns. It features an asynchronous operation mode, dual terminal position, and is ideal for embedded applications requiring reliable data storage. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N6 by STMicroelectronics

M29F800DB70N6

STMicroelectronics

M29F800DB70N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N1 by STMicroelectronics

M29F800DT55N1

STMicroelectronics

M29F800DT55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N6 by STMicroelectronics

M29F800DT55N6

STMicroelectronics

M29F800DT55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal configuration in a thin SO package, suitable for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in diverse environments.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70N1 by STMicroelectronics

M29F800DT70N1

STMicroelectronics

M29F800DT70N1 from STMicroelectronics is a 5V NOR flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates asynchronously, and supports data polling. Ideal for embedded applications requiring reliable storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV322AT-70TI by Atmel

AT49BV322AT-70TI

Atmel

Atmel's AT49BV322AT-70TI is a 2MX16 NOR flash memory with 8K,64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring fast data polling and common flash interface support.

70 ns

TOP/BOTTOM BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

3

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

45 mA

3.6 V

2.65 V

2.7

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

12 mm

AT29C010A-70TI by Atmel

AT29C010A-70TI

Atmel

Atmel's AT29C010A-70TI is a 128Kx8 NOR flash memory with 131,072 words. Operating at 5V, it offers fast access time of 70ns and toggle bit feature. Ideal for industrial applications, this CMOS technology-based memory has a compact form factor with gull wing terminals for easy integration in various devices.

70 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

3

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

M29F800DB70N6E by STMicroelectronics

M29F800DB70N6E

STMicroelectronics

M29F800DB70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and supports asynchronous mode for industrial applications. Ideal for embedded systems requiring reliable data storage.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70N6E by STMicroelectronics

M29F800DT70N6E

STMicroelectronics

M29F800DT70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and is ideal for industrial applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV162A-70TI by Atmel

AT49BV162A-70TI

Atmel

Atmel's AT49BV162A-70TI is a 1MX16 NOR flash memory with 8K,64K sector size. Operating at 3V, it offers fast access time of 70ns and low standby current of 0.000025A. Ideal for industrial applications requiring reliable non-volatile memory with parallel interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

16777216 bit

FLASH

16

3

1

8,31

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

45 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT28F128J3RG-12MET by Micron Technology

MT28F128J3RG-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

120 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm