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TSOP1 Flash Memory 177

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
AT29C040A-10TC by Atmel

AT29C040A-10TC

Atmel

Atmel's AT29C040A-10TC is a 512Kx8 NOR flash memory with 2K sectors, operating at 5V. It features a page size of 256 words, parallel interface, and fast access time of 100ns. Ideal for commercial applications requiring high-speed data storage in compact devices.

100 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

240

5

5

Not Qualified

1.2 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

MT28F128J3RP-12ET by Micron Technology

MT28F128J3RP-12ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: NOR TYPE;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F128J3RP-12MET by Micron Technology

MT28F128J3RP-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 16;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F800B3WP-9B by Micron Technology

MT28F800B3WP-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Additional Features: BOTTOM BOOT BLOCK;

90 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WP-9T by Micron Technology

MT28F800B3WP-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

90 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WP-8BET by Micron Technology

MT28F800B5WP-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WP-8B by Micron Technology

MT28F800B5WP-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WP-8T by Micron Technology

MT28F800B5WP-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F004B5VP-8T by Micron Technology

MT28F004B5VP-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Power Supplies (V): 5;

80 ns

TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e3

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F400B5WP-8B by Micron Technology

MT28F400B5WP-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e3

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WP-8TET by Micron Technology

MT28F400B5WP-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e3

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WP-8T by Micron Technology

MT28F400B5WP-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e3

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M50FLW040AN5G by STMicroelectronics

M50FLW040AN5G

STMicroelectronics

M50FLW040AN5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin SO package, ideal for compact applications. With 512Kx8 organization, it's perfect for embedded systems requiring reliable data storage.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW040BN5G by STMicroelectronics

M50FLW040BN5G

STMicroelectronics

M50FLW040BN5G from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin profile SO package, ideal for compact applications. With -20 °C to 85 °C temp range, it's perfect for various electronic devices.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW080AN5G by STMicroelectronics

M50FLW080AN5G

STMicroelectronics

M50FLW080AN5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a 3.3V supply, ideal for high-speed applications. It features an access time of 11 ns and operates in a temperature range of -20 °C to 85 °C. This compact, surface-mount device is perfect for embedded systems requiring reliable data storage.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

8388608 bit

FLASH

8

1

48,13

40

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

10 mm

M50FLW080ANB5G by STMicroelectronics

M50FLW080ANB5G

STMicroelectronics

M50FLW080ANB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW080BNB5G by STMicroelectronics

M50FLW080BNB5G

STMicroelectronics

M50FLW080BNB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

CAT28F512H-12 by Catalyst Semiconductor

CAT28F512H-12

Catalyst Semiconductor

CAT28F512H-12 by Catalyst Semiconductor is a 64KX8 NOR Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 120 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

2A

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

12

Not Qualified

1.2 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

8 mm

CAT28F512HI-90 by Catalyst Semiconductor

CAT28F512HI-90

Catalyst Semiconductor

CAT28F512HI-90 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 90ns. Ideal for industrial applications requiring reliable non-volatile memory solutions.

90 ns

YES

NO

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

2A

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

12

Not Qualified

1.2 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

8 mm

M50FW080N5G by STMicroelectronics

M50FW080N5G

STMicroelectronics

M50FW080N5G from STMicroelectronics is a 1Mx8 NOR Flash memory with a 3.3V supply, ideal for asynchronous applications. It features a max access time of 11 ns and operates b/w -20 °C to 85 °C. This compact SOIC package is perfect for space-constrained designs.

11 ns

YES

NO

R-PDSO-G40

e6

18.4 mm

8388608 bit

FLASH

8

3

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FW080NB5G by STMicroelectronics

M50FW080NB5G

STMicroelectronics

M50FW080NB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a compact SOIC package, operating at 3.3V. It features fast access times of 11 ns and supports asynchronous operation, making it ideal for embedded applications. With a wide temp range (-20 °C to 85 °C), it's perfect for diverse environments.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

AT45DB321C-TC by Atmel

AT45DB321C-TC

Atmel

Atmel's AT45DB321C-TC is a 32M NOR flash memory with 40MHz clock frequency, SPI serial bus, and hardware write protection. It operates at 3V, has 28 terminals in a small outline package, and is ideal for commercial applications requiring reliable non-volatile memory storage.

ORGANISED AS 8192 PAGES OF 528 BYTES EACH

40 MHz

R-PDSO-G28

e0

11.8 mm

33554432 bit

FLASH

1

3

1

28

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX1

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

1.2 mm

SPI

.000015 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.55 mm

DUAL

NOR TYPE

8 mm

HARDWARE

M50FW016N5G by STMicroelectronics

M50FW016N5G

STMicroelectronics

M50FW016N5G from STMicroelectronics is a 16Mb NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.0-3.6V, features a compact SOIC package, and is ideal for embedded applications requiring reliable data storage. Its dual terminal design ensures efficient surface mounting in space-constrained environments.

11 ns

R-PDSO-G40

e6

18.4 mm

16777216 bit

FLASH

8

3

1

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NOR TYPE

10 mm

M50FW040N5G by STMicroelectronics

M50FW040N5G

STMicroelectronics

M50FW040N5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC package, ideal for space-constrained applications. This versatile memory supports dual terminal positioning and operates b/w -20 °C to 85 °C.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

10 mm

M50FW040NB5G by STMicroelectronics

M50FW040NB5G

STMicroelectronics

M50FW040NB5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC-32 package, ideal for space-constrained applications. With a temp range of -20 °C to 85 °C, it's perfect for industrial use.

11 ns

YES

NO

R-PDSO-G32

e3/e6

14 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

LH28F160S5HT-TW by Sharp Corporation

LH28F160S5HT-TW

Sharp Corporation

LH28F160S5HT-TW by Sharp Corp is a 1MX16 NOR Flash Memory with 90ns access time, operating at -40 to 85°C. It features a supply voltage of 4.5-5.5V, parallel interface, and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices like smartphones and IoT gadgets.

90 ns

8

R-PDSO-G56

e6

18.4 mm

16777216 bit

FLASH

16

3

1

56

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

250

5

Not Qualified

1.19 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Bismuth (Sn/Bi)

GULL WING

.5 mm

DUAL

10

NOR TYPE

14 mm

LH28F320SKTD-ZR by Sharp Corporation

LH28F320SKTD-ZR

Sharp Corporation

LH28F320SKTD-ZR by Sharp Corp is a 32Mb NOR Flash Memory with 2Mx16 organization, operating at 3V. It features a fast access time of 120ns and operates in parallel mode. Ideal for commercial applications requiring high-speed data storage in compact devices.

120 ns

8

R-PDSO-G56

18.4 mm

33554432 bit

FLASH

16

1

56

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

Not Qualified

1.19 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOR TYPE

14 mm

AT29C040A-90TU by Atmel

AT29C040A-90TU

Atmel

Atmel's AT29C040A-90TU is a 512Kx8 NOR flash memory with 2K sectors and 256-word pages. Operating at 5V, it offers fast access time of 90ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in small outline packages.

90 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29LV020-10TU by Atmel

AT29LV020-10TU

Atmel

Atmel's AT29LV020-10TU is a 256Kx8 NOR flash memory with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 100ns access time, and 1K sectors. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in compact designs.

100 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

256

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

8 mm

20 ms

AT29LV512-12TU by Atmel

AT29LV512-12TU

Atmel

Atmel's AT29LV512-12TU is a 64KX8 NOR flash memory with 512 sectors, operating at 3.3V. It offers 10000 write/erase cycles, 120ns access time, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

120 ns

NO

YES

10000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

3

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

128

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

128

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

20 ms

AT29C020-70TU by Atmel

AT29C020-70TU

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Toggle Bit: YES;

70 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

M50LPW116N5G by STMicroelectronics

M50LPW116N5G

STMicroelectronics

M50LPW116N5G from STMicroelectronics is a 2M x 8 NOR Flash memory with a max access time of 11 ns and operates at a nominal voltage of 3.3V. It features a compact SOIC package, ideal for space-constrained applications. This synchronous device supports dual terminals and offers robust performance in various electronic systems.

11 ns

TOP

YES

NO

R-PDSO-G40

e3

18.4 mm

16777216 bit

FLASH

8

1

1,2,1,30,16

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,32K,64K,4K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT29F2G08AACWP:CTR by Micron Technology

MT29F2G08AACWP:CTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Qualification: Not Qualified;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

Not Qualified

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MX29LV400CBTI-70G by Macronix

MX29LV400CBTI-70G

Macronix

Macronix's MX29LV400CBTI-70G is a 48-terminal NOR flash memory with 4MX16 organization, operating at 3V. It offers fast access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring high-density parallel memory with common flash interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

3

1

1,2,1,7

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

W19B320ABT7H by Winbond Electronics

W19B320ABT7H

Winbond Electronics

W19B320ABT7H by Winbond Electronics is a NOR flash memory with 2MX16 organization and 8,63 sectors. It operates at a voltage of 3V and has a max access time of 70ns. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

3

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-20 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

OTHER

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT29F4G08BABWPET by Micron Technology

MT29F4G08BABWPET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

18 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

4294967296 bit

FLASH

8

1

4K

48

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

M29F040B70N6E by STMicroelectronics

M29F040B70N6E

STMicroelectronics

M29F040B70N6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous mode, operates b/w -40 °C to 85 °C, and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B70N6E by STMicroelectronics

M29W040B70N6E

STMicroelectronics

M29W040B70N6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous operating mode, 70 ns max access time, and supports up to 100K write/erase cycles. Its compact SOIC package ensures efficient space utilization in designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

MX29GL320EBTI-70G by Macronix

MX29GL320EBTI-70G

Macronix

Macronix's MX29GL320EBTI-70G is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and offers fast access time of 70ns. Ideal for applications requiring high-speed data storage in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.0001 Amp

Flash Memories

100 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MX30LF1G28AD-TI by Macronix

MX30LF1G28AD-TI

Macronix

The Macronix MX30LF1G28AD-TI is a 128Mx8 SLC NAND flash memory with 1K sectors and 2K word page size. Operating at 3V, it offers 60000 write/erase cycles and supports parallel interface. With a small outline package, it's ideal for applications requiring high endurance and fast data access in a compact form factor.

NO

NO

10

60000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

3

YES

1.2 mm

128K

.00005 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

.00002 ms

MT29F64G08AJABAWP-IT:BTR by Micron Technology

MT29F64G08AJABAWP-IT:BTR

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words: 8589934592 words; Peak Reflow Temperature (C): 260;

20 ns

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F8G08ABABAWP-AATX:B by Micron Technology

MT29F8G08ABABAWP-AATX:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

NOT SPECIFIED

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

SLC NAND TYPE

12 mm

MT29F16G08ABABAWP-AIT:B by Micron Technology

MT29F16G08ABABAWP-AIT:B

Micron Technology

Micron Technology's MT29F16G08ABABAWP-AIT:B is a 3.3V SLC NAND Flash Memory with 2GX8 organization, offering 4K page size and 100000 write/erase cycles endurance. Suitable for industrial applications, it operates in asynchronous mode with a temperature range of -40 to 85 °C.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

3

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

SLC NAND TYPE

12 mm

MX30LF1G18AC-TI by Macronix

MX30LF1G18AC-TI

Macronix

Macronix's MX30LF1G18AC-TI is a 3V SLC NAND flash memory with 128Kx8 organization. Operating in industrial temperature range (-40 to 85°C), it offers parallel interface, 131072 words capacity, and 0.5mm terminal pitch. Ideal for applications requiring high-speed data storage in compact devices.

R-PDSO-G48

e3

18.4 mm

1048576 bit

FLASH

8

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

W29N01GVSIAA by Winbond Electronics

W29N01GVSIAA

Winbond Electronics

W29N01GVSIAA by Winbond Electronics is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in industrial temperature range of -40 to 85°C. It features parallel interface, 48 terminals, and compact dimensions of 12mm width and 18.4mm length. Ideal for applications requiring high-density memory storage in harsh environments.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

SST39SF010A-70-4C-WHE-T by Microchip Technology

SST39SF010A-70-4C-WHE-T

Microchip Technology

SST39SF010A-70-4C-WHE-T by Microchip is a NOR flash memory with 128Kx8 organization, operating at 5V. It offers 100000 Write/Erase cycles, 70ns access time, and supports asynchronous mode. Ideal for applications requiring fast data access and reliable non-volatile storage in commercial temperature environments.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

1048576 bit

FLASH

8

1

1

32

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

MX60LF8G18AC-TI by Macronix

MX60LF8G18AC-TI

Macronix

Macronix's MX60LF8G18AC-TI is a 3V SLC NAND flash memory with 1GX8 organization, operating from -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and industrial temperature grade suitable for various embedded applications.

R-PDSO-G48

e3

18.4 mm

8589934592 bit

FLASH

8

3

1

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP-IT:C by Micron Technology

MT29F32G08AFACAWP-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm