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SOP Flash Memory 245

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
N25Q064A11ESEA0F by Micron Technology

N25Q064A11ESEA0F

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;

108 MHz

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

125 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.16 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.285 mm

N25Q128A13ESEH0E by Micron Technology

N25Q128A13ESEH0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Organization: 128MX1;

108 MHz

S-PDSO-G8

5.285 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

3

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.285 mm

N25Q128A13ESFH0E by Micron Technology

N25Q128A13ESFH0E

Micron Technology

Micron Technology's N25Q128A13ESFH0E is a 128M NOR flash memory with 108 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact devices.

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

1

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q256A73ESF40G by Micron Technology

N25Q256A73ESF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

108 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

1

1

16

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

M25P20-VMN6PBA by Micron Technology

M25P20-VMN6PBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2097152 bit

FLASH

8

1

8

2097152 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.000005 Amp

Flash Memories

15 mA

3.6 V

2.3 V

2.7

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

N25Q512A13GSFH0E by Micron Technology

N25Q512A13GSFH0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5 mm;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

M25P32-VMW3GB by Micron Technology

M25P32-VMW3GB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Organization: 4MX8;

75 MHz

S-PDSO-G8

5.285 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

260

2.7

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

30

5.285 mm

W25Q64FVSSIG by Winbond Electronics

W25Q64FVSSIG

Winbond Electronics

Winbond Electronics' W25Q64FVSSIG is an 8MX8 flash memory with SPI serial bus, operating at up to 104 MHz. It features a small outline package and can withstand industrial temperatures. Ideal for applications requiring high-speed data storage in compact devices.

1

104 MHz

20

S-PDSO-G8

e3

5.28 mm

67108864 bit

FLASH

8

3

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

Not Qualified

2.16 mm

SPI

.00005 Amp

3.6 V

3 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

5.28 mm

HARDWARE/SOFTWARE

M25P16-VMF6PBA by Micron Technology

M25P16-VMF6PBA

Micron Technology

M25P16-VMF6PBA by Micron Technology is a 2MX8 NOR type flash memory with 16777216 bit density. It operates at 75 MHz clock frequency, has 100000 write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring reliable data storage with low power consumption.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

16777216 bit

FLASH

8

1

16

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

2.7

Not Qualified

2.3 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

M25P16-VMN3YPB by Micron Technology

M25P16-VMN3YPB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P40-VMN6PBA by Micron Technology

M25P40-VMN6PBA

Micron Technology

M25P40-VMN6PBA by Micron Technology is a NOR type Flash Memory with 512Kx8 organization, SPI serial bus type, and 50 MHz clock frequency. It is used in industrial applications for storing data securely with 100000 write/erase cycles endurance.

50 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4194304 bit

FLASH

8

8

524288 words

512K

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

2.7

Not Qualified

SPI

.00001 Amp

Flash Memories

15 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

HARDWARE/SOFTWARE

MX66L51235FMI-10G by Macronix

MX66L51235FMI-10G

Macronix

Macronix MX66L51235FMI-10G is a 128MX4 NOR flash memory with 104 MHz clock frequency, SPI serial bus type, and 100K write/erase cycles. Ideal for industrial applications requiring high endurance and reliable data storage in a compact 10.3mm x 7.52mm package.

ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT

2

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.3 mm

536870912 bit

FLASH

4

3

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.65 mm

SPI

.00004 Amp

Flash Memories

40 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

7.52 mm

HARDWARE/SOFTWARE

M25P10-AVMN6PYA by Micron Technology

M25P10-AVMN6PYA

Micron Technology

Micron Technology's M25P10-AVMN6PYA is a 128Kx8 NOR Flash Memory with 1048576-bit memory density. Operating at up to 50MHz, it supports synchronous mode and has a programming voltage of 2.7V. Ideal for industrial applications requiring reliable data storage in temperatures ranging from -40°C to 85°C.

50 MHz

R-PDSO-G8

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.7

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

DUAL

30

NOR TYPE

W25Q16CVSSJG by Winbond Electronics

W25Q16CVSSJG

Winbond Electronics

W25Q16CVSSJG by Winbond Electronics is a 16Mb flash memory IC with 2Mx8 organization, operating at 3V. It features synchronous operation, AEC-Q100 screening level, and industrial temperature grade. Ideal for applications requiring small outline packages and serial interface communication.

S-PDSO-G8

5.23 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

105 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

2.7

AEC-Q100

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

5.23 mm

W25Q16DVSNIG by Winbond Electronics

W25Q16DVSNIG

Winbond Electronics

W25Q16DVSNIG by Winbond Electronics is a NOR flash memory with 2MX8 organization, 104 MHz clock frequency, and SPI serial bus type. It operates at temperatures ranging from -40 to 85 °C and has a max supply voltage of 3.6 V. Ideal for industrial applications requiring high endurance and fast data transfer speeds.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

5 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.000005 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

4 mm

HARDWARE/SOFTWARE

N25Q064A13ESEH0E by Micron Technology

N25Q064A13ESEH0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.285 mm

W25Q40CLSSIG by Winbond Electronics

W25Q40CLSSIG

Winbond Electronics

W25Q40CLSSIG by Winbond Electronics is a 4MX1 NOR flash memory with 104 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factors.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

4194304 bit

FLASH

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.5/3.3

3

Not Qualified

2.16 mm

SPI

.000005 Amp

Flash Memories

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

SST26WF016B-104I/SN by Microchip Technology

SST26WF016B-104I/SN

Microchip Technology

SST26WF016B-104I/SN by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 1.8V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BA-104I/SN by Microchip Technology

SST26WF016BA-104I/SN

Microchip Technology

SST26WF016BA-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance and 100000 write/erase cycles.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BAT-104I/SN by Microchip Technology

SST26WF016BAT-104I/SN

Microchip Technology

SST26WF016BAT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and operating temperature range of -40 to 85°C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BT-104I/SN by Microchip Technology

SST26WF016BT-104I/SN

Microchip Technology

SST26WF016BT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and low standby current of 0.000005Amp.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

W25Q64FWSSIG by Winbond Electronics

W25Q64FWSSIG

Winbond Electronics

W25Q64FWSSIG by Winbond Electronics is a 64M NOR Flash Memory with SPI interface. Features include 104 MHz clock frequency, 1.8V programming voltage, and 100K Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factors.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

e3

5.28 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

1.8

1.8

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

SST25WF080B-40I/SN by Microchip Technology

SST25WF080B-40I/SN

Microchip Technology

SST25WF080B-40I/SN by Microchip: 8MX1 organization, 40MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring 8388608-bit memory density and 100000 write/erase cycles endurance.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST25WF080BT-40I/SN by Microchip Technology

SST25WF080BT-40I/SN

Microchip Technology

SST25WF080BT-40I/SN by Microchip: 8MX1 flash memory with 8388608 bit density, operates at 40 MHz clock frequency. Ideal for industrial applications requiring 100000 Write/Erase cycles, SPI serial bus interface, and -40 to 85 °C temperature range.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

N25Q064A13ESF42G by Micron Technology

N25Q064A13ESF42G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

108 MHz

R-PDSO-G16

10.3 mm

67108864 bit

FLASH

1

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

M25P16-VMN6PBA by Micron Technology

M25P16-VMN6PBA

Micron Technology

M25P16-VMN6PBA by Micron Technology is a 2MX8 NOR type flash memory with 75 MHz clock frequency. It operates at -40 to 85 °C and has 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P16-VMN6YPBA by Micron Technology

M25P16-VMN6YPBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Serial Bus Type: SPI;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

N25Q512A81GSF40G by Micron Technology

N25Q512A81GSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Functions: 1;

108 MHz

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

1

1

16

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

MT28F800B3SG-9BET by Micron Technology

MT28F800B3SG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Memory Width: 16;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9B by Micron Technology

MT28F800B3SG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9TET by Micron Technology

MT28F800B3SG-9TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9T by Micron Technology

MT28F800B3SG-9T

Micron Technology

MT28F800B3SG-9T by Micron Technology is a 512KX16 NOR flash memory with 8388608 bit density. It operates at 3.3V, has 100000 Write/Erase Cycles endurance, and offers fast access time of 90 ns. Ideal for applications requiring high-speed data storage in small outline packages.

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5SG-8BET by Micron Technology

MT28F800B5SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5SG-8B by Micron Technology

MT28F800B5SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5SG-8TET by Micron Technology

MT28F800B5SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8BET by Micron Technology

MT28F400B5SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

235

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

30

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8B by Micron Technology

MT28F400B5SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

80 ns

ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8TET by Micron Technology

MT28F400B5SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8T by Micron Technology

MT28F400B5SG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Width: 12.6 mm;

80 ns

ALSO CONFG AS 256KX16; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MX29F800CBMI-70G by Macronix

MX29F800CBMI-70G

Macronix

Macronix's MX29F800CBMI-70G is a 512Kx16 NOR flash memory with 100,000 write/erase cycles. Operating at 5V, it offers fast access time of 70ns and endurance for industrial applications. With parallel interface and toggle bit support, it suits systems requiring reliable non-volatile memory storage.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

8388608 bit

FLASH

16

1

1,2,1,15

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.00005 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

LE25S81MCTWG by Onsemi

LE25S81MCTWG

Onsemi

LE25S81MCTWG by Onsemi is a 1MX8 Flash Memory with 40 MHz Clock Frequency. Operating at -40 to 90 °C, it's ideal for industrial applications requiring 8388608 bit memory density and 1.65-1.95 V supply voltage range.

40 MHz

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

90 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

1.75 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

LE25U81AMCTWG by Onsemi

LE25U81AMCTWG

Onsemi

The Onsemi LE25U81AMCTWG is a 1MX8 Flash Memory IC with 8388608 bit memory density. It operates in synchronous mode at up to 40 MHz clock frequency, suitable for industrial applications. With a small outline package style and Gull Wing terminals, it offers reliable performance in a compact form factor.

40 MHz

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

1.75 mm

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

N25Q064A13ESED0E by Micron Technology

N25Q064A13ESED0E

Micron Technology

N25Q064A13ESED0E by Micron Technology is a NOR flash memory with 64MX1 organization, operating at 108 MHz clock frequency. It offers 100000 Write/Erase cycles endurance and operates on a 3V supply voltage. Ideal for industrial applications requiring high-speed data storage in compact form factors.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q064A13ESED0G by Micron Technology

N25Q064A13ESED0G

Micron Technology

The Micron Technology N25Q064A13ESED0G is a NOR type Flash Memory with 64Mx1 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85°C and has a small outline package style. Ideal for industrial applications requiring high-speed data storage with up to 100,000 write/erase cycles.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

AT26DF161A-SSU by Atmel

AT26DF161A-SSU

Atmel

Atmel's AT26DF161A-SSU is a 16Mx1 NOR flash memory with 70MHz clock frequency, SPI serial bus, and 100K write/erase cycles. Ideal for industrial applications requiring reliable data storage in a compact 8-terminal package with hardware/software write protection.

70 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.925 mm

16777216 bit

FLASH

1

1

8

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.000015 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M29F200BB70M6E by STMicroelectronics

M29F200BB70M6E

STMicroelectronics

M29F200BB70M6E from STMicroelectronics is a 2Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with a temp range of -40 °C to 85°C and offers 100K write/erase cycles. This compact SOIC package ensures efficient data storage in embedded systems.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

2097152 bit

FLASH

16

1

1,2,1,3

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

M29F200BT70M6E by STMicroelectronics

M29F200BT70M6E

STMicroelectronics

M29F200BT70M6E from STMicroelectronics is a 2Mb NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in an industrial temp range (-40 °C to 85°C). Ideal for embedded applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

2097152 bit

FLASH

16

1

1,2,1,3

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

AT25DF321-SU by Atmel

AT25DF321-SU

Atmel

Atmel's AT25DF321-SU is a 32Mb NOR Flash Memory with SPI serial bus, operating at 70MHz. It offers 100K Write/Erase cycles, -40 to 85°C temp range, and supports hardware/software write protection. Ideal for industrial applications requiring high endurance and reliable data storage in compact designs.

70 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

5.29 mm

33554432 bit

FLASH

8

2

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.000025 Amp

Flash Memories

16 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.24 mm

HARDWARE/SOFTWARE