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N25Q128A13ESFH0E

Micron Technology

N25Q128A13ESFH0E by Micron Technology

Micron Technology's N25Q128A13ESFH0E is a 128M NOR flash memory with 108 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 23,200 parts In-Stock

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23,200

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Vyrian

USA . 8,691 parts In-Stock

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8,691

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Digiode

USA . 1,077 parts In-Stock

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1,077

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,128 parts In-Stock

1+ parts

$2.114

100+ parts

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3,128

$2.114

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$3.447

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164

$3.447

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AZTECH Wire

Italy . 197 parts In-Stock

1+ parts

$7.673

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197

$7.673

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Ampacity Inc.

Singapore . 1,062 parts In-Stock

1+ parts

$28.000

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1,062

$28.000

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Corphita

USA . 1,994 parts In-Stock

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1,994

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Continental Prestige Electronics

USA . 1,476 parts In-Stock

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1,476

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Argo Parts USA

USA . 1,301 parts In-Stock

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1,301

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Microchip USA

USA . 240 parts In-Stock

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240

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of cutting-edge technology with the N25Q128A13ESFH0E by Micron Technology. This high-quality Flash Memory device offers unparalleled reliability and speed, making it ideal for a wide range of applications. From industrial to consumer electronics, this product delivers exceptional performance and durability. With its advanced features and innovative design, the N25Q128A13ESFH0E provides customers with unbeatable value and peace of mind. Upgrade your devices today with Micron Technology's top-of-the-line Flash Memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Operating Mode: SYNCHRONOUS

Allows for faster data transfer and processing.

Nominal Supply Voltage / Vsup (V): 3

Optimal voltage for efficient performance and power consumption.

Write Protection: HARDWARE/SOFTWARE

Enhanced security features to prevent unauthorized data modification.

Memory Density: 134217728 bit

High memory density for storage of large amounts of data.

Serial Bus Type: SPI

Supports Serial Peripheral Interface for communication with other components.

Technical Specifications

Flash Memory N25Q128A13ESFH0E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13ESFH0E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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