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UCD3138064RGZR

Texas Instruments

UCD3138064RGZR by Texas Instruments

UCD3138064RGZR by Texas Instruments is a Power Management IC with 0.9mm max seated height, 7mm width, and 0.5mm terminal pitch. It is used in power supply management circuits with peak reflow temp of 260°C for 30s.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,114 parts In-Stock

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Digiode

USA . 4,512 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 19 parts In-Stock

1+ parts

$1.428

100+ parts

-

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$2.123

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19

$1.428

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$2.123

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Semicontronic

India . 877 parts In-Stock

1+ parts

$1.500

100+ parts

$1.462

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$1.455

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877

$1.500

$1.462

$1.455

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ChromeModa Solutions

Germany . 5,194 parts In-Stock

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$1.604

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$1.315

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$1.604

$1.315

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IDEA Electronic Components Group

UK . 653 parts In-Stock

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$1.604

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$1.444

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653

$1.604

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$1.444

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One Stop Electronics

USA . 179 parts In-Stock

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$3.500

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179

$3.500

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Ampacity Inc.

Singapore . 287 parts In-Stock

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$7.500

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287

$7.500

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AZTECH Wire

Italy . 382 parts In-Stock

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$17.169

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$17.169

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Corphita

USA . 2,554 parts In-Stock

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DigiPath Technology Company

USA . 2,138 parts In-Stock

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$1.446

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$1.446

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Microchip USA

USA . 229 parts In-Stock

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Corohmni

South Africa . 132 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the UCD3138064RGZR Power Management IC. Designed for power supply management circuits, this product offers unmatched performance and efficiency in a compact form factor. Perfect for a wide range of applications, this IC provides exceptional value and benefits to customers looking for reliable and high-quality power management solutions. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish provides excellent solderability and corrosion resistance, ensuring a reliable connection over time.

Maximum Seated Height: 0.9 mm

Low maximum seated height allows for a more compact design, saving valuable space in electronic devices.

Width (mm): 7 mm

The 7mm width allows for easy integration into various PCB layouts without taking up excessive space.

Other IC type: POWER SUPPLY MANAGEMENT CIRCUIT

Being a power supply management circuit IC, this product offers advanced control and monitoring features for efficient power management.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this IC can withstand the reflow process without any damage, ensuring reliability during assembly.

Peak Reflow Temperature °C: 260

Capable of withstanding a peak reflow temperature of 260°C, this IC can be used in various soldering processes without compromising its performance.

Length: 7 mm

The 7mm length complements the width specification, allowing for a compact and efficient layout on the PCB.

Terminal Pitch: 0.5 mm

The tight terminal pitch of 0.5mm enables high-density mounting, making it suitable for applications where space is limited.

Moisture Sensitivity Level (MSL): 3

Having a moisture sensitivity level of 3 indicates that this IC can withstand standard exposure to moisture during storage and handling, ensuring its reliability in various environments.

Technical Specifications

Power Management ICs UCD3138064RGZR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.9 mm

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Pitch:

.5 mm

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7 mm

Trade Compliance

UCD3138064RGZR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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