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TMS626402-10DGE

Texas Instruments

TMS626402-10DGE by Texas Instruments

TMS626402-10DGE by Texas Instruments is a 4MX4 Synchronous DRAM with 3.3V supply voltage, operating at temperatures from 0 to 70 °C. It features dual bank page burst access mode and self-refresh capability, suitable for applications requiring high memory density and fast data processing in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,160 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,160

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-

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Digiode

USA . 4,399 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,399

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,701 parts In-Stock

1+ parts

$3.341

100+ parts

-

1k+ parts

$3.866

10k+ parts

-

1,701

$3.341

-

$3.866

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DigiPath Technology Company

USA . 1,169 parts In-Stock

1+ parts

$3.679

100+ parts

$3.385

1k+ parts

-

10k+ parts

-

1,169

$3.679

$3.385

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ChromeModa Solutions

Germany . 6,158 parts In-Stock

1+ parts

$3.754

100+ parts

$3.078

1k+ parts

-

10k+ parts

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6,158

$3.754

$3.078

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IDEA Electronic Components Group

UK . 1,953 parts In-Stock

1+ parts

$3.754

100+ parts

-

1k+ parts

$3.379

10k+ parts

-

1,953

$3.754

-

$3.379

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One Stop Electronics

USA . 666 parts In-Stock

1+ parts

$7.000

100+ parts

-

1k+ parts

-

10k+ parts

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666

$7.000

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AZTECH Wire

Italy . 237 parts In-Stock

1+ parts

$18.245

100+ parts

-

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237

$18.245

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Corphita

USA . 1,162 parts In-Stock

1+ parts

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1,162

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Overview

Upgrade your electronic devices with the TMS626402-10DGE by Texas Instruments, a top-quality synchronous DRAM that offers reliability and high performance. Manufactured by Texas Instruments, a renowned leader in the industry, this memory IC is ideal for a wide range of applications. With its 3-STATE output characteristics and self-refresh feature, this product ensures seamless operation and efficient data processing. Experience the benefits of cutting-edge technology with the TMS626402-10DGE, providing customers with value, speed, and reliability in a compact and durable package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of the product onto circuit boards, saving time and labor costs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between the memory and the processor, improving overall system performance.

Nominal Supply Voltage: 3.3 V

The moderate supply voltage of 3.3 V strikes a balance between power consumption and performance, making it an energy-efficient choice.

No. of Terminals: 44

The ample number of terminals allows for easy integration and connectivity, providing flexibility in designing and implementing the product.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, the product can withstand extended use in demanding environments without overheating.

Technology: CMOS

Complementary metal-oxide-semiconductor (CMOS) technology offers low power consumption, high speed, and compatibility with a wide range of devices, enhancing the overall performance of the product.

Memory IC Type: SYNCHRONOUS DRAM

Synchronous dynamic random-access memory (SDRAM) offers fast data access speeds and high bandwidth, making it an excellent choice for applications requiring high-performance memory.

Technical Specifications

DRAM TMS626402-10DGE attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

CAS BEFORE RAS/SELF REFRESH

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

44

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

TMS626402-10DGE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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