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MT48LC16M16A2B4-7EIT:G

Micron Technology

MT48LC16M16A2B4-7EIT:G by Micron Technology

Micron Technology's MT48LC16M16A2B4-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.

Median Price

$12.485

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 941 parts In-Stock

1+ parts

$6.820

100+ parts

$6.070

1k+ parts

$5.670

10k+ parts

-

941

$6.820

$6.070

$5.670

-

Verical

USA . 941 parts In-Stock

1+ parts

$6.820

100+ parts

-

1k+ parts

-

10k+ parts

-

941

$6.820

-

-

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Mouser Electronics

USA . 1,705 parts In-Stock

1+ parts

$12.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,705

$12.050

-

-

-

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$12.920

100+ parts

$11.886

1k+ parts

$11.138

10k+ parts

-

450

$12.920

$11.886

$11.138

-

Newark

USA . 1,560 parts In-Stock

1+ parts

$16.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,560

$16.000

-

-

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Element14

Singapore . 1,591 parts In-Stock

1+ parts

$21.610

100+ parts

-

1k+ parts

-

10k+ parts

-

1,591

$21.610

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$6.312

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$6.312

-

-

-

Digiode

USA . 1,893 parts In-Stock

1+ parts

$7.585

100+ parts

-

1k+ parts

-

10k+ parts

-

1,893

$7.585

-

-

-

Chip Stock

USA . 5,298 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,298

-

-

-

-

Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,000

-

-

-

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Vyrian

USA . 754 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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754

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,584 parts In-Stock

1+ parts

$2.380

100+ parts

-

1k+ parts

-

10k+ parts

-

1,584

$2.380

-

-

-

Andel Nordic

Denmark . 5,454 parts In-Stock

1+ parts

$2.459

100+ parts

-

1k+ parts

$2.361

10k+ parts

$2.361

5,454

$2.459

-

$2.361

$2.361

Corohmni

South Africa . 114 parts In-Stock

1+ parts

$4.927

100+ parts

-

1k+ parts

-

10k+ parts

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114

$4.927

-

-

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Continental Prestige Electronics

USA . 4,072 parts In-Stock

1+ parts

$6.312

100+ parts

-

1k+ parts

-

10k+ parts

$6.186

4,072

$6.312

-

-

$6.186

Ampacity Inc.

Singapore . 914 parts In-Stock

1+ parts

$6.390

100+ parts

-

1k+ parts

-

10k+ parts

-

914

$6.390

-

-

-

Semicontronic

India . 678 parts In-Stock

1+ parts

$6.390

100+ parts

$6.230

1k+ parts

$6.198

10k+ parts

-

678

$6.390

$6.230

$6.198

-

Corphita

USA . 1,455 parts In-Stock

1+ parts

$7.186

100+ parts

-

1k+ parts

-

10k+ parts

-

1,455

$7.186

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-

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Perfect Parts

USA . 8,781 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,781

-

-

-

-

RC Electronics

USA . 8,657 parts In-Stock

1+ parts

-

100+ parts

$6.510

1k+ parts

$6.140

10k+ parts

$6.020

8,657

-

$6.510

$6.140

$6.020

A-Z Elektronik GmbH

Germany . 8,427 parts In-Stock

1+ parts

-

100+ parts

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8,427

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Argo Parts USA

USA . 4,902 parts In-Stock

1+ parts

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4,902

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Authorized Procurement Solutions

USA . 1,088 parts In-Stock

1+ parts

-

100+ parts

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1,088

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-

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Futuretech Components

Singapore . 996 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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996

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-

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GreenTree Electronics

Israel . 88 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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88

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-

-

Overview

Elevate your technology with Micron Technology's MT48LC16M16A2B4-7EIT:G. This high-quality DRAM offers exceptional performance, reliability, and versatility for a wide range of applications. With a nominal supply voltage of 3.3V and a maximum clock frequency of 143MHz, this memory module provides efficient operation and seamless integration. Whether you're designing cutting-edge electronics or upgrading existing systems, the MT48LC16M16A2B4-7EIT:G delivers unbeatable value, benefits, and advantages that will take your projects to the next level. Trust in Micron Technology to elevate your innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is cost-effective and provides good durability, making this product a budget-friendly and reliable choice.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for better timing and data throughput, making this product suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V ensures compatibility with a wide range of systems and reduces power consumption, making this product energy-efficient.

Maximum Clock Frequency (fCLK): 143 MHz

With a high clock frequency, this product offers fast data processing and improved performance in demanding tasks.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, this product provides efficient data transfer rates and is ideal for applications requiring high-speed memory access.

Technical Specifications

DRAM MT48LC16M16A2B4-7EIT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0025 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT48LC16M16A2B4-7EIT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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