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TMS626162-12

Texas Instruments

TMS626162-12 by Texas Instruments

TMS626162-12 by Texas Instruments is a 1MX16 Synchronous DRAM with 3.3V supply voltage, operating at temperatures from 0 to 70 °C. It features DUAL BANK PAGE BURST access mode, 4096 refresh cycles, and offers memory density of 16777216 bits. Ideal for applications requiring high-speed data storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,856 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,856

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-

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Digiode

USA . 3,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,055

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 746 parts In-Stock

1+ parts

$3.969

100+ parts

-

1k+ parts

$4.439

10k+ parts

-

746

$3.969

-

$4.439

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DigiPath Technology Company

USA . 1,581 parts In-Stock

1+ parts

$4.371

100+ parts

$4.021

1k+ parts

-

10k+ parts

-

1,581

$4.371

$4.021

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ChromeModa Solutions

Germany . 3,809 parts In-Stock

1+ parts

$4.460

100+ parts

$3.657

1k+ parts

-

10k+ parts

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3,809

$4.460

$3.657

-

-

IDEA Electronic Components Group

UK . 1,938 parts In-Stock

1+ parts

$4.460

100+ parts

-

1k+ parts

$4.014

10k+ parts

-

1,938

$4.460

-

$4.014

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AZTECH Wire

Italy . 484 parts In-Stock

1+ parts

$5.267

100+ parts

-

1k+ parts

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10k+ parts

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484

$5.267

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One Stop Electronics

USA . 1,387 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

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10k+ parts

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1,387

$10.000

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Corphita

USA . 2,313 parts In-Stock

1+ parts

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100+ parts

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2,313

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Overview

Experience the outstanding performance and reliability of the TMS626162-12 by Texas Instruments, a leading manufacturer known for producing top-quality DRAM products. Ideal for a wide range of applications, this synchronous memory module offers seamless operation, self-refresh capabilities, and 3-state output characteristics. With a compact design and dual bank page burst access mode, this memory IC provides customers with exceptional value and benefits in terms of speed, efficiency, and storage capacity. Upgrade your system with the TMS626162-12 and enjoy the advantages of cutting-edge technology from a trusted industry leader.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the product durable and lightweight, ideal for portable electronic devices.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards, saving space and simplifying the overall design.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures data is transferred at a consistent rate, improving overall performance and reliability of the product.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is a standard and widely supported voltage level, making it compatible with a wide range of electronic systems and applications.

Memory IC Type: SYNCHRONOUS DRAM

The use of synchronous DRAM technology enhances the speed and efficiency of data transfer, making this product suitable for high-performance computing applications.

Technical Specifications

DRAM TMS626162-12 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G50

Length:

20.95 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

TMS626162-12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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