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TMS626162-12A

Texas Instruments

TMS626162-12A by Texas Instruments

TMS626162-12A by Texas Instruments is a 1MX16 Synchronous DRAM with 1048576 words and 16-bit memory width. Operating at 3.3V, it features self-refresh and dual bank page burst access mode. Ideal for commercial applications requiring high memory density and fast data processing in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,847 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,847

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-

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Digiode

USA . 120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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120

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 987 parts In-Stock

1+ parts

$3.548

100+ parts

-

1k+ parts

$4.071

10k+ parts

-

987

$3.548

-

$4.071

-

ChromeModa Solutions

Germany . 6,985 parts In-Stock

1+ parts

$3.987

100+ parts

$3.269

1k+ parts

-

10k+ parts

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6,985

$3.987

$3.269

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IDEA Electronic Components Group

UK . 1,664 parts In-Stock

1+ parts

$3.987

100+ parts

-

1k+ parts

$3.588

10k+ parts

-

1,664

$3.987

-

$3.588

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AZTECH Wire

Italy . 813 parts In-Stock

1+ parts

$7.095

100+ parts

-

1k+ parts

-

10k+ parts

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813

$7.095

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-

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One Stop Electronics

USA . 1,225 parts In-Stock

1+ parts

$27.000

100+ parts

-

1k+ parts

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10k+ parts

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1,225

$27.000

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Corphita

USA . 3,729 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,729

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DigiPath Technology Company

USA . 1,012 parts In-Stock

1+ parts

-

100+ parts

$3.595

1k+ parts

-

10k+ parts

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1,012

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$3.595

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Overview

Experience the seamless performance and reliability of the TMS626162-12A by Texas Instruments, a leading manufacturer in the industry. This DRAM chip offers unparalleled value with its advanced technology and innovative design. Ideal for a wide range of applications, this product ensures optimal functionality and efficiency. Trust in Texas Instruments to deliver top-quality products that exceed expectations. Elevate your projects with the TMS626162-12A and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection to the DRAM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Surface mount capability makes it easy to integrate this DRAM into different electronic devices, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred efficiently and synchronized with the system clock, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V allows for compatibility with a wide range of systems while maintaining energy efficiency.

No. of Terminals: 50

With 50 terminals, this DRAM offers extensive connectivity options for seamless integration into complex circuit designs.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliability and stability even in demanding thermal environments.

Organization: 1MX16

The 1MX16 organization provides a large memory capacity and high data throughput, suitable for applications requiring substantial storage and processing capabilities.

Memory IC Type: SYNCHRONOUS DRAM

Being a Synchronous DRAM, this memory IC type offers improved performance and efficiency compared to asynchronous alternatives.

Technical Specifications

DRAM TMS626162-12A attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G50

Length:

20.95 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.63 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

TMS626162-12A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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