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TMS626162-15DGE

Texas Instruments

TMS626162-15DGE by Texas Instruments

TMS626162-15DGE by Texas Instruments is a 1MX16 Synchronous DRAM with 3.3V supply, operating at 66MHz clock frequency. It features dual bank page burst access mode and supports common I/O type. Ideal for applications requiring high-speed memory operations in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,727 parts In-Stock

1+ parts

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3,727

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-

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Digiode

USA . 3,607 parts In-Stock

1+ parts

-

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-

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3,607

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,228 parts In-Stock

1+ parts

$2.875

100+ parts

-

1k+ parts

$3.366

10k+ parts

-

2,228

$2.875

-

$3.366

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ChromeModa Solutions

Germany . 1,628 parts In-Stock

1+ parts

$3.230

100+ parts

$2.649

1k+ parts

-

10k+ parts

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1,628

$3.230

$2.649

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IDEA Electronic Components Group

UK . 1,077 parts In-Stock

1+ parts

$3.230

100+ parts

-

1k+ parts

$2.907

10k+ parts

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1,077

$3.230

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$2.907

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AZTECH Wire

Italy . 884 parts In-Stock

1+ parts

$7.392

100+ parts

-

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884

$7.392

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One Stop Electronics

USA . 731 parts In-Stock

1+ parts

$13.000

100+ parts

-

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731

$13.000

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Corphita

USA . 533 parts In-Stock

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533

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DigiPath Technology Company

USA . 44 parts In-Stock

1+ parts

-

100+ parts

$2.912

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44

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$2.912

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Overview

Enhance your electronic devices with the high-quality TMS626162-15DGE by Texas Instruments, a leading manufacturer in the industry. This DRAM chip offers exceptional performance and reliability for a wide range of applications. With its compact design and efficient power consumption, this synchronous memory module provides fast data access and seamless operation. Upgrade your products today and experience the value and benefits that Texas Instruments brings to your technology needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring the product's longevity.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving time and effort during production.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures data is transferred efficiently and accurately, making it suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is common in many electronic devices, making it compatible with a wide range of systems.

Maximum Clock Frequency (fCLK): 66 MHz

With a high maximum clock frequency of 66 MHz, this DRAM can handle demanding tasks and operations effectively.

Memory Density: 16777216 bit

The high memory density allows for storing a large amount of data in a compact space, making it suitable for memory-intensive applications.

Technology: CMOS

The CMOS technology used in this product ensures low power consumption and high speed, making it efficient and reliable for various applications.

Maximum Access Time: 12 ns

The low maximum access time of 12 ns ensures fast data retrieval and processing, improving overall system performance.

Technical Specifications

DRAM TMS626162-15DGE attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Access Time:

12 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

66 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G50

Length:

20.95 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP50,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

170 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

TMS626162-15DGE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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