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TMS626162-12DGER

Texas Instruments

TMS626162-12DGER by Texas Instruments

TMS626162-12DGER by Texas Instruments is a 1MX16 Synchronous DRAM with 1048576 words and 16-bit memory width. Operating at 3.3V, it offers dual bank page burst access mode and self-refresh capability. Ideal for commercial applications requiring fast data access with a max operating temperature of 70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,088 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,088

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-

-

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Digiode

USA . 4,447 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,447

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,323 parts In-Stock

1+ parts

$2.527

100+ parts

-

1k+ parts

$3.017

10k+ parts

-

1,323

$2.527

-

$3.017

-

DigiPath Technology Company

USA . 903 parts In-Stock

1+ parts

$2.782

100+ parts

-

1k+ parts

-

10k+ parts

-

903

$2.782

-

-

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ChromeModa Solutions

Germany . 5,016 parts In-Stock

1+ parts

$2.839

100+ parts

$2.328

1k+ parts

-

10k+ parts

-

5,016

$2.839

$2.328

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IDEA Electronic Components Group

UK . 1,958 parts In-Stock

1+ parts

$2.839

100+ parts

-

1k+ parts

$2.555

10k+ parts

-

1,958

$2.839

-

$2.555

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One Stop Electronics

USA . 618 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

-

10k+ parts

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618

$10.000

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AZTECH Wire

Italy . 285 parts In-Stock

1+ parts

$10.904

100+ parts

-

1k+ parts

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10k+ parts

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285

$10.904

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Corphita

USA . 4,284 parts In-Stock

1+ parts

-

100+ parts

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4,284

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Overview

Elevate your electronic devices with the TMS626162-12DGER by Texas Instruments, a high-quality synchronous DRAM that offers unparalleled performance and reliability. Designed by a trusted manufacturer in the industry, this memory module is perfect for a wide range of applications. Whether you're looking to enhance the speed and efficiency of your computer or boost the performance of your gaming console, this product delivers value, benefits, and advantages that will exceed your expectations. Upgrade to the TMS626162-12DGER today and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easier assembly and smaller footprint on PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and data transfer, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a low voltage of 3.3V helps in reducing power consumption.

Organization: 1MX16

The 1MX16 organization provides a high memory capacity and data processing capability.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, this product can function reliably in various environments.

Memory IC Type: SYNCHRONOUS DRAM

The use of synchronous DRAM technology ensures fast and accurate data access for efficient performance.

Maximum Access Time: 9 ns

The maximum access time of 9 nanoseconds allows for quick data retrieval and processing.

Technical Specifications

DRAM TMS626162-12DGER attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Access Time:

9 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G50

Length:

20.95 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

TMS626162-12DGER Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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