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TMS626162-15DGER

Texas Instruments

TMS626162-15DGER by Texas Instruments

TMS626162-15DGER by Texas Instruments is a 1MX16 Synchronous DRAM with 3.3V supply voltage, operating at temperatures from 0 to 70 °C. It features dual bank page burst access mode, self-refresh capability, and 1048576 words memory organization. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,506

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-

-

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Digiode

USA . 1,332 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,332

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 468 parts In-Stock

1+ parts

$3.156

100+ parts

-

1k+ parts

$3.675

10k+ parts

-

468

$3.156

-

$3.675

-

DigiPath Technology Company

USA . 246 parts In-Stock

1+ parts

$3.475

100+ parts

$3.197

1k+ parts

-

10k+ parts

-

246

$3.475

$3.197

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ChromeModa Solutions

Germany . 6,531 parts In-Stock

1+ parts

$3.546

100+ parts

$2.908

1k+ parts

-

10k+ parts

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6,531

$3.546

$2.908

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IDEA Electronic Components Group

UK . 810 parts In-Stock

1+ parts

$3.546

100+ parts

-

1k+ parts

$3.191

10k+ parts

-

810

$3.546

-

$3.191

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One Stop Electronics

USA . 656 parts In-Stock

1+ parts

$7.000

100+ parts

-

1k+ parts

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10k+ parts

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656

$7.000

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AZTECH Wire

Italy . 892 parts In-Stock

1+ parts

$19.641

100+ parts

-

1k+ parts

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10k+ parts

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892

$19.641

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Corphita

USA . 2,117 parts In-Stock

1+ parts

-

100+ parts

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2,117

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Overview

Unlock the power of cutting-edge technology with the TMS626162-15DGER by Texas Instruments. Designed to deliver superior performance and reliability, this SYNCHRONOUS DRAM is perfect for a wide range of applications. With a small outline, thin profile package and self-refresh capability, this memory IC offers unmatched convenience and efficiency. Trust in Texas Instruments' reputation for quality and innovation, and experience the benefits of fast access speeds and 3-state output characteristics. Upgrade your systems with the TMS626162-15DGER and stay ahead of the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the DRAM, making it reliable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between the DRAM and the system, leading to efficient performance.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage of 3.3V ensures consistent and reliable power delivery to the DRAM, optimizing its functionality.

No. of Terminals: 50

The ample number of terminals provides robust connectivity options, enabling seamless integration with other components in the system.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance of 70°C allows the DRAM to perform effectively even under demanding environmental conditions.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, this product offers synchronized data transfer with the system, enhancing overall efficiency and speed of data processing.

Technical Specifications

DRAM TMS626162-15DGER attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G50

Length:

20.95 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

TMS626162-15DGER Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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