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TM248CBK32-60L

Texas Instruments

TM248CBK32-60L by Texas Instruments

TM248CBK32-60L by Texas Instruments is a 2MX32 FAST PAGE DRAM MODULE with 67108864-bit memory density. It operates in ASYNCHRONOUS mode at 5V, with a max access time of 60ns. Ideal for applications requiring fast data retrieval and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,499

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-

-

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Digiode

USA . 3,393 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,393

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,351 parts In-Stock

1+ parts

$3.875

100+ parts

-

1k+ parts

$4.357

10k+ parts

-

1,351

$3.875

-

$4.357

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One Stop Electronics

USA . 1,161 parts In-Stock

1+ parts

$4.000

100+ parts

-

1k+ parts

-

10k+ parts

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1,161

$4.000

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-

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DigiPath Technology Company

USA . 806 parts In-Stock

1+ parts

$4.267

100+ parts

$3.926

1k+ parts

-

10k+ parts

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806

$4.267

$3.926

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IDEA Electronic Components Group

UK . 1,514 parts In-Stock

1+ parts

$4.354

100+ parts

-

1k+ parts

$3.919

10k+ parts

-

1,514

$4.354

-

$3.919

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ChromeModa Solutions

Germany . 290 parts In-Stock

1+ parts

$4.354

100+ parts

$3.570

1k+ parts

-

10k+ parts

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290

$4.354

$3.570

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AZTECH Wire

Italy . 768 parts In-Stock

1+ parts

$19.874

100+ parts

-

1k+ parts

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10k+ parts

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768

$19.874

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Corphita

USA . 2,683 parts In-Stock

1+ parts

-

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2,683

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Overview

Elevate your electronics with the TM248CBK32-60L by Texas Instruments, a top-of-the-line DRAM module designed for seamless performance and reliability. With Texas Instruments' reputation for quality and innovation, this module delivers unparalleled value and benefits to customers in need of fast and efficient memory solutions. Whether you're working on high-performance computing or data storage applications, this asynchronous DRAM module with 2MX32 organization and 60 ns maximum access time will elevate your projects to new heights. Upgrade to Texas Instruments for superior quality and performance today.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape makes the product easy to handle and install in various devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for more flexibility in accessing and transferring data, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures stability and reliability in performance.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style enables compact design and efficient use of space.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the product can withstand moderate heat environments.

Organization: 2MX32

The 2MX32 organization offers a balanced combination of memory capacity and data width.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures the product can function in diverse temperature conditions.

Technology: CMOS

CMOS technology provides low power consumption and high speed performance, making the product energy-efficient.

Memory Width: 32

A memory width of 32 bits allows for efficient data processing and handling.

Maximum Access Time: 60 ns

With a maximum access time of 60ns, the product delivers quick and responsive data access.

Technical Specifications

DRAM TM248CBK32-60L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM248CBK32-60L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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