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TM248CBJ32U-70

Texas Instruments

TM248CBJ32U-70 by Texas Instruments

TM248CBJ32U-70 by Texas Instruments is a 2MX32 DRAM module with 32-bit memory width. It operates asynchronously at 5V, with a max access time of 70ns. Ideal for applications requiring fast page access and high memory density in commercial temperature grades.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,547 parts In-Stock

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Digiode

USA . 4,817 parts In-Stock

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4,817

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Distributors (Availability)

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Parana Technologies

USA . 1,627 parts In-Stock

1+ parts

$3.637

100+ parts

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1k+ parts

$4.146

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1,627

$3.637

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$4.146

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DigiPath Technology Company

USA . 2,095 parts In-Stock

1+ parts

$4.004

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$4.004

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ChromeModa Solutions

Germany . 3,888 parts In-Stock

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$4.086

100+ parts

$3.351

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3,888

$4.086

$3.351

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IDEA Electronic Components Group

UK . 1,735 parts In-Stock

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$4.086

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$3.677

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1,735

$4.086

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$3.677

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One Stop Electronics

USA . 754 parts In-Stock

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$10.000

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754

$10.000

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AZTECH Wire

Italy . 232 parts In-Stock

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$15.416

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232

$15.416

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Corphita

USA . 2,683 parts In-Stock

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Overview

Upgrade your systems with the TM248CBJ32U-70 by Texas Instruments, a high-quality DRAM module that delivers reliability and performance. Manufactured by industry leader Texas Instruments, this asynchronous memory solution offers seamless operation in a variety of applications. With a wide operating temperature range and low power consumption, this product is designed to meet your needs while providing fast access times and ample memory density. Trust Texas Instruments for cutting-edge technology and elevate your projects with the TM248CBJ32U-70.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility and efficiency in data processing.

Input/Output Type: COMMON

Common input/output type simplifies connections and compatibility with other components.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, ensuring compatibility with most systems.

No. of Terminals: 72

Large number of terminals provide ample connectivity options.

Maximum Operating Temperature: 70 °C

Wide range of operating temperature allows for use in various environments.

Organization: 2MX32

High organization size allows for storing a large amount of data in a single module.

Output Characteristics: 3-STATE

3-state output allows for efficient sharing of data bus lines.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance in cold conditions.

Maximum Seated Height: 17.78 mm

Compact height allows for space-saving installation.

Minimum Supply Voltage (Vsup): 4.5 V

Allows operation at low supply voltage, conserving power.

Temperature Grade: COMMERCIAL

Commercial grade ensures reliability and compatibility with standard applications.

Access Mode: FAST PAGE

Fast page access mode enables rapid retrieval of data.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations.

Maximum Supply Current: 364 mA

Low supply current consumption for energy-efficient operation.

No. of Words: 2097152 words

Large memory capacity for storing extensive data.

Memory Width: 32

Wide memory width allows for efficient data processing.

Terminal Pitch: 1.27 mm

Compact terminal pitch enables high-density packaging.

No. of Words Code: 2M

Concise code system for easy identification of memory capacity.

Maximum Supply Voltage (Vsup): 5.5 V

Operates within safe voltage range for enhanced durability.

Memory Density: 67108864 bit

High memory density for efficient data storage.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module offers quick and reliable data access.

Maximum Standby Current: 0.004 Amp

Low standby current consumption for energy-saving operation.

Refresh Cycles: 1024

Sufficient refresh cycles to maintain data integrity.

Maximum Access Time: 70 ns

Fast access time ensures quick data retrieval.

Technical Specifications

DRAM TM248CBJ32U-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

364 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM248CBJ32U-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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