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TM248CBJ32F-70

Texas Instruments

TM248CBJ32F-70 by Texas Instruments

TM248CBJ32F-70 by Texas Instruments is a 2MX32 DRAM module with 67108864-bit memory density. It operates at 5V, has a max access time of 70ns, and uses FAST PAGE technology. Ideal for applications requiring high-speed data storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,569 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,569

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Digiode

USA . 498 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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498

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 283 parts In-Stock

1+ parts

$5.126

100+ parts

-

1k+ parts

$5.715

10k+ parts

-

283

$5.126

-

$5.715

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DigiPath Technology Company

USA . 1,797 parts In-Stock

1+ parts

$5.645

100+ parts

$5.193

1k+ parts

-

10k+ parts

-

1,797

$5.645

$5.193

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ChromeModa Solutions

Germany . 5,881 parts In-Stock

1+ parts

$5.760

100+ parts

$4.723

1k+ parts

-

10k+ parts

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5,881

$5.760

$4.723

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IDEA Electronic Components Group

UK . 1,351 parts In-Stock

1+ parts

$5.760

100+ parts

-

1k+ parts

$5.184

10k+ parts

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1,351

$5.760

-

$5.184

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One Stop Electronics

USA . 1,068 parts In-Stock

1+ parts

$12.000

100+ parts

-

1k+ parts

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10k+ parts

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1,068

$12.000

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AZTECH Wire

Italy . 761 parts In-Stock

1+ parts

$17.007

100+ parts

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761

$17.007

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Corphita

USA . 816 parts In-Stock

1+ parts

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816

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Overview

Elevate your electronic devices with the TM248CBJ32F-70 FAST PAGE DRAM MODULE by Texas Instruments, a cutting-edge memory solution that guarantees top-notch performance and reliability. With Texas Instruments' renowned reputation for excellence in semiconductor manufacturing, you can trust that this DRAM module delivers unparalleled quality and durability. Ideal for a wide range of applications, this product offers lightning-fast access times and a high memory density, providing exceptional value and benefits to customers seeking superior memory solutions. Upgrade your devices today with the TM248CBJ32F-70 and experience seamless performance like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient packing and easy integration into electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data transfer and better performance.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common power supplies and ensures reliable operation.

No. of Terminals: 72

High number of terminals provide flexibility in connecting the DRAM module to other components.

Maximum Operating Temperature: 70 °C

Can operate in high temperature environments without performance degradation.

Memory Width: 32

32-bit memory width allows for fast data processing and efficient operation.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module provides quick access to data and improves system performance.

Refresh Cycles: 1024

With 1024 refresh cycles, the DRAM module can maintain data integrity over extended periods of use.

Maximum Access Time: 70 ns

Low access time ensures quick retrieval of data and responsiveness in applications.

Technical Specifications

DRAM TM248CBJ32F-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

364 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM248CBJ32F-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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