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TM248CBJ32F-80

Texas Instruments

TM248CBJ32F-80 by Texas Instruments

TM248CBJ32F-80 by Texas Instruments is a 2MX32 DRAM module with 32-bit memory width. It operates asynchronously at 5V, offering fast page access mode with 80ns max access time. Ideal for commercial applications requiring high memory density and low standby current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,359 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,359

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-

-

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Vyrian

USA . 2,242 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,242

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 950 parts In-Stock

1+ parts

$2.595

100+ parts

-

1k+ parts

$3.086

10k+ parts

-

950

$2.595

-

$3.086

-

DigiPath Technology Company

USA . 183 parts In-Stock

1+ parts

$2.858

100+ parts

$2.629

1k+ parts

-

10k+ parts

-

183

$2.858

$2.629

-

-

ChromeModa Solutions

Germany . 2,089 parts In-Stock

1+ parts

$2.916

100+ parts

$2.391

1k+ parts

-

10k+ parts

-

2,089

$2.916

$2.391

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-

IDEA Electronic Components Group

UK . 2,078 parts In-Stock

1+ parts

$2.916

100+ parts

-

1k+ parts

$2.624

10k+ parts

-

2,078

$2.916

-

$2.624

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AZTECH Wire

Italy . 193 parts In-Stock

1+ parts

$10.460

100+ parts

-

1k+ parts

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10k+ parts

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193

$10.460

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One Stop Electronics

USA . 1,189 parts In-Stock

1+ parts

$12.000

100+ parts

-

1k+ parts

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10k+ parts

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1,189

$12.000

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Corphita

USA . 1,377 parts In-Stock

1+ parts

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100+ parts

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1,377

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Overview

Elevate your technology with the TM248CBJ32F-80 by Texas Instruments, a cutting-edge DRAM module that promises unparalleled performance and reliability. With a commitment to excellence, Texas Instruments delivers a product that exceeds industry standards, offering customers a seamless experience in various applications. Embrace the advantages of this high-quality microelectronic assembly, featuring fast page access mode and 3-state output characteristics. Trust in Texas Instruments to provide value and innovation, enhancing the efficiency of your projects with the TM248CBJ32F-80.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into electronic devices and circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation can lead to faster overall performance compared to synchronous operation in certain applications.

Input/Output Type: COMMON

Common input/output type simplifies connectivity and integration with other components.

Nominal Supply Voltage / Vsup (V): 5

Standard nominal supply voltage of 5V ensures compatibility with various systems and power sources.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module provides quick access to data, enhancing overall system performance.

Technical Specifications

DRAM TM248CBJ32F-80 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

344 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM248CBJ32F-80 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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