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TM248CBJ32U-70L

Texas Instruments

TM248CBJ32U-70L by Texas Instruments

TM248CBJ32U-70L by Texas Instruments is a 2MX32 CMOS DRAM module with 2097152 words memory width. It operates asynchronously at 5V, offering fast page access mode with 70ns max access time. Ideal for commercial applications requiring high memory density and speed in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,492 parts In-Stock

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6,492

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Digiode

USA . 3,678 parts In-Stock

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3,678

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,627 parts In-Stock

1+ parts

$2.366

100+ parts

-

1k+ parts

$2.864

10k+ parts

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1,627

$2.366

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$2.864

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DigiPath Technology Company

USA . 59 parts In-Stock

1+ parts

$2.605

100+ parts

$2.396

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-

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59

$2.605

$2.396

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ChromeModa Solutions

Germany . 2,095 parts In-Stock

1+ parts

$2.658

100+ parts

$2.180

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2,095

$2.658

$2.180

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IDEA Electronic Components Group

UK . 1,076 parts In-Stock

1+ parts

$2.658

100+ parts

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1k+ parts

$2.392

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1,076

$2.658

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$2.392

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AZTECH Wire

Italy . 299 parts In-Stock

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$5.192

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299

$5.192

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One Stop Electronics

USA . 1,154 parts In-Stock

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$7.000

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1,154

$7.000

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Corphita

USA . 3,804 parts In-Stock

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3,804

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Overview

Unlock the power of cutting-edge technology with the TM248CBJ32U-70L by Texas Instruments. As a leader in the industry, Texas Instruments brings you high-quality DRAM modules that offer unmatched performance and reliability. Whether you're looking to enhance your computer's speed or improve data processing capabilities, this product is the perfect solution for you. With its fast page access mode and impressive memory density, the TM248CBJ32U-70L is designed to meet all your memory needs. Trust Texas Instruments to deliver exceptional products that exceed your expectations. Elevate your experience with the TM248CBJ32U-70L today!

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient and standardized placement and installation in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data, improving overall performance and responsiveness.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this DRAM compatible with a wide range of electronic systems and power supplies.

No. of Terminals: 72

Having 72 terminals enables efficient data transfer and connectivity between the DRAM module and other components in the system.

Maximum Operating Temperature: 70 °C

The DRAM module can operate effectively at relatively high temperatures, ensuring reliability in various environmental conditions.

Organization: 2MX32

The organization of 2MX32 means the DRAM can store a large amount of data efficiently in a compact form factor.

Temperature Grade: COMMERCIAL

Being rated for commercial temperature grades indicates that this DRAM module can perform reliably in standard operating environments.

Technology: CMOS

Using CMOS technology provides low power consumption and high speed operation, making this DRAM efficient and fast.

No. of Words: 2097152 words

With a large number of words, this DRAM can store a vast amount of data for processing and retrieval.

Memory Width: 32

The memory width of 32 bits allows for efficient data transmission and processing, improving overall system performance.

Memory IC Type: FAST PAGE DRAM MODULE

The fast page design of this DRAM module enables quick access to data, reducing latency and improving system responsiveness.

Maximum Access Time: 70 ns

The quick maximum access time of 70 nanoseconds ensures fast data retrieval and processing, enhancing overall system speed.

Technical Specifications

DRAM TM248CBJ32U-70L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM248CBJ32U-70L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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