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TM248CBJ32F-60L

Texas Instruments

TM248CBJ32F-60L by Texas Instruments

TM248CBJ32F-60L by Texas Instruments is a 2MX32 CMOS DRAM module with 2097152 words memory width. It operates asynchronously at 5V, with a max access time of 60ns. Ideal for commercial applications requiring fast page access and high memory density.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,994 parts In-Stock

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4,994

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Digiode

USA . 3,891 parts In-Stock

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3,891

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 393 parts In-Stock

1+ parts

$2.920

100+ parts

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$3.419

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393

$2.920

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$3.419

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DigiPath Technology Company

USA . 185 parts In-Stock

1+ parts

$3.215

100+ parts

$2.958

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185

$3.215

$2.958

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IDEA Electronic Components Group

UK . 1,682 parts In-Stock

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$3.281

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$2.953

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1,682

$3.281

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$2.953

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ChromeModa Solutions

Germany . 901 parts In-Stock

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$3.281

100+ parts

$2.690

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901

$3.281

$2.690

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One Stop Electronics

USA . 1,087 parts In-Stock

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$15.000

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1,087

$15.000

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AZTECH Wire

Italy . 780 parts In-Stock

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$17.683

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780

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Corphita

USA . 4,061 parts In-Stock

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Overview

Enhance your electronic devices with the TM248CBJ32F-60L by Texas Instruments, a top-quality FAST PAGE DRAM MODULE designed for optimal performance and reliability. Texas Instruments, known for their cutting-edge technology, delivers a product that exceeds expectations in terms of memory density, speed, and efficiency. Ideal for a wide range of applications, this DRAM module offers customers value through its fast access time, large memory capacity, and reliable operation. Upgrade your devices today with the TM248CBJ32F-60L and experience seamless performance like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement and organization in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in data transfer, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a higher supply voltage of 5V provides stable performance and reliability.

No. of Terminals: 72

The high number of terminals allows for sufficient connectivity and data transfer capabilities.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly ensures compactness and efficiency in space utilization.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows for reliable performance in various environmental conditions.

Organization: 2MX32

The 2MX32 organization offers a balanced combination of storage capacity and data transfer speed.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures functionality even in colder environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection processes.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V ensures efficient power usage and extends the product's lifespan.

Temperature Grade: COMMERCIAL

Commercial temperature grade indicates suitability for standard consumer electronic devices.

Access Mode: FAST PAGE

Fast page access mode enables quick retrieval and storage of data, enhancing overall system performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it an energy-efficient choice.

Terminal Form: NO LEAD

No lead terminal form enhances reliability and reduces the risk of environmental contamination.

No. of Words: 2097152 words

The high number of words provides ample storage capacity for data-intensive applications.

Memory Width: 32

A memory width of 32 bits allows for efficient data processing and transfer.

No. of Words Code: 2M

The code '2M' indicates a memory capacity of 2 million words, suitable for demanding storage requirements.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a safe operating range and safeguards the product from voltage spikes.

Memory Density: 67108864 bit

High memory density of 67108864 bits enables efficient storage and retrieval of large volumes of data.

Memory IC Type: FAST PAGE DRAM MODULE

The fast page DRAM module offers quick access times and low latency, ideal for high-performance computing tasks.

Maximum Access Time: 60 ns

The maximum access time of 60 nanoseconds ensures swift data retrieval and processing speeds.

Technical Specifications

DRAM TM248CBJ32F-60L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM248CBJ32F-60L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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