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TM248CBK32-70L

Texas Instruments

TM248CBK32-70L by Texas Instruments

TM248CBK32-70L by Texas Instruments is a 2MX32 CMOS DRAM module with 2097152 words memory capacity. It operates asynchronously at 5V, with a memory width of 32 bits and max access time of 70ns. Ideal for commercial applications requiring fast page access in microelectronic assemblies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,880 parts In-Stock

1+ parts

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100+ parts

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4,880

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Digiode

USA . 3,336 parts In-Stock

1+ parts

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3,336

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 369 parts In-Stock

1+ parts

$3.623

100+ parts

-

1k+ parts

$4.136

10k+ parts

-

369

$3.623

-

$4.136

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DigiPath Technology Company

USA . 1,607 parts In-Stock

1+ parts

$3.990

100+ parts

$3.670

1k+ parts

-

10k+ parts

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1,607

$3.990

$3.670

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ChromeModa Solutions

Germany . 6,047 parts In-Stock

1+ parts

$4.071

100+ parts

$3.338

1k+ parts

-

10k+ parts

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6,047

$4.071

$3.338

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IDEA Electronic Components Group

UK . 2,297 parts In-Stock

1+ parts

$4.071

100+ parts

-

1k+ parts

$3.664

10k+ parts

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2,297

$4.071

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$3.664

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AZTECH Wire

Italy . 581 parts In-Stock

1+ parts

$13.386

100+ parts

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581

$13.386

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One Stop Electronics

USA . 1,446 parts In-Stock

1+ parts

$29.000

100+ parts

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1,446

$29.000

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Corphita

USA . 283 parts In-Stock

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283

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Overview

Enhance your electronic devices with the TM248CBK32-70L by Texas Instruments, a top-tier manufacturer known for delivering quality products. This DRAM module offers unmatched reliability and efficiency, perfect for a wide range of applications. With a high memory density of 67108864 bits and an operating temperature range of 0 to 70°C, this product provides exceptional performance in demanding environments. Upgrade your system with this cutting-edge technology and experience seamless operation and increased productivity. Unlock the full potential of your devices with Texas Instruments TM248CBK32-70L.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and easy integration into electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for fast and independent read and write access to memory cells, improving overall performance.

Nominal Supply Voltage (Vsup): 5V

The 5V supply voltage provides stable power to the DRAM module, ensuring reliable operation.

No. of Terminals: 72

The high number of terminals allows for complex data transfer and connectivity, enhancing the module's capabilities.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the DRAM module can function effectively in various environmental conditions.

Organization: 2MX32

The 2MX32 organization provides a high memory density and efficient data storage capacity.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in cooler environments.

Minimum Supply Voltage (Vsup): 4.5V

The 4.5V minimum supply voltage ensures that the DRAM module operates within safe and efficient power parameters.

Temperature Grade: COMMERCIAL

The commercial temperature grade indicates that the DRAM module is suitable for standard commercial applications.

Access Mode: FAST PAGE

Fast page access mode allows for quick and efficient retrieval of data, improving overall system performance.

Technology: CMOS

The CMOS technology used in the DRAM module ensures low power consumption and high speed operation.

Terminal Form: NO LEAD

The no lead terminal form simplifies installation and enhances reliability of the DRAM module.

Memory Density: 67108864 bit

The high memory density of 67108864 bits allows for efficient storage and retrieval of large amounts of data.

Maximum Access Time: 70 ns

The maximum access time of 70 nanoseconds ensures fast data access and improved system responsiveness.

Technical Specifications

DRAM TM248CBK32-70L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM248CBK32-70L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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