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TM248CBJ32F-60

Texas Instruments

TM248CBJ32F-60 by Texas Instruments

TM248CBJ32F-60 by Texas Instruments is a 2MX32 DRAM module with 32-bit memory width. It operates asynchronously at 5V, with a max access time of 60ns. Ideal for applications requiring fast page access and high memory density in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,606 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,606

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-

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Digiode

USA . 825 parts In-Stock

1+ parts

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-

1k+ parts

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825

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,206 parts In-Stock

1+ parts

$2.926

100+ parts

-

1k+ parts

$3.425

10k+ parts

-

2,206

$2.926

-

$3.425

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DigiPath Technology Company

USA . 943 parts In-Stock

1+ parts

$3.222

100+ parts

$2.964

1k+ parts

-

10k+ parts

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943

$3.222

$2.964

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ChromeModa Solutions

Germany . 1,197 parts In-Stock

1+ parts

$3.288

100+ parts

$2.696

1k+ parts

-

10k+ parts

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1,197

$3.288

$2.696

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IDEA Electronic Components Group

UK . 687 parts In-Stock

1+ parts

$3.288

100+ parts

-

1k+ parts

$2.959

10k+ parts

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687

$3.288

-

$2.959

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AZTECH Wire

Italy . 679 parts In-Stock

1+ parts

$17.767

100+ parts

-

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10k+ parts

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679

$17.767

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One Stop Electronics

USA . 462 parts In-Stock

1+ parts

$27.000

100+ parts

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462

$27.000

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Corphita

USA . 4,653 parts In-Stock

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4,653

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Overview

Unlock seamless performance and reliability with the TM248CBJ32F-60 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality products that exceed expectations. This DRAM module is perfect for a wide range of applications, offering fast page access mode and 2MX32 organization. With a nominal supply voltage of 5V and a memory density of 67108864 bits, this product provides exceptional value and benefits to customers looking for high-performance solutions. Upgrade your system today with the TM248CBJ32F-60 and experience unmatched efficiency and speed.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices and ensures compatibility with standard packaging designs.

Input/Output Type: COMMON

Common input/output type simplifies circuit design and integration, making it easier for developers to use this product in their projects.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V ensures compatibility with most electronic systems, making it a versatile choice for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of applications, making this product a reliable and efficient choice for memory needs.

Memory Density: 67108864 bit

High memory density allows for storage of a large amount of data in a compact form factor, making this product suitable for applications that require high storage capacity.

Refresh Cycles: 1024

With a high number of refresh cycles, this product ensures data integrity and reliability over extended periods of use, making it a dependable choice for critical applications.

Maximum Access Time: 60 ns

Fast access time ensures quick retrieval of data, reducing latency and improving overall system performance, making this product suitable for high-speed applications.

Technical Specifications

DRAM TM248CBJ32F-60 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

384 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM248CBJ32F-60 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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