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TM248CBK32-70

Texas Instruments

TM248CBK32-70 by Texas Instruments

TM248CBK32-70 by Texas Instruments is a 2MX32 DRAM module with 32-bit memory width. Operating at 5V, it offers a max access time of 70ns and refresh cycles of 1024. Ideal for fast page applications in commercial temperature grades, this asynchronous memory IC has a package style of MICROELECTRONIC ASSEMBLY.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,567 parts In-Stock

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Digiode

USA . 107 parts In-Stock

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PAR Electronics

UK . 22 parts In-Stock

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One Stop Electronics

USA . 1,070 parts In-Stock

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$1.000

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$1.000

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Parana Technologies

USA . 351 parts In-Stock

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$4.242

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$4.676

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351

$4.242

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ChromeModa Solutions

Germany . 2,760 parts In-Stock

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$4.766

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$3.908

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2,760

$4.766

$3.908

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IDEA Electronic Components Group

UK . 1,183 parts In-Stock

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$4.766

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$4.289

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$4.766

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$4.289

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AZTECH Wire

Italy . 752 parts In-Stock

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$13.324

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Corphita

USA . 1,659 parts In-Stock

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DigiPath Technology Company

USA . 432 parts In-Stock

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$4.297

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Overview

Experience lightning-fast data processing with the TM248CBK32-70 by Texas Instruments, a top-tier manufacturer known for delivering cutting-edge technology. This DRAM module offers seamless performance and reliability, making it ideal for a wide range of applications. With a high memory density of 67108864 bits, this module ensures your systems run smoothly and efficiently. Say goodbye to lag times and hello to enhanced productivity with the TM248CBK32-70.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various system designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible data access and processing.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with common power systems.

No. of Terminals: 72

Ample number of terminals for efficient data transfer and connectivity.

Maximum Operating Temperature: 70 °C

High operating temperature range ensures reliability under various conditions.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance.

Memory Density: 67108864 bit

High memory density enables storage of large amounts of data.

Refresh Cycles: 1024

Efficient refresh cycles ensure data integrity and reliability.

Maximum Access Time: 70 ns

Fast access time for quick data retrieval and processing.

Technical Specifications

DRAM TM248CBK32-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

25.527 mm

Self Refresh:

NO

Maximum Standby Current:

.016 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

1440 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM248CBK32-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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