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TGS8706-SCC

Texas Instruments

TGS8706-SCC by Texas Instruments

TGS8706-SCC by Texas Instruments is a GAAS SPDT RF switch with 33.01 dBm CW power, 1.1 VSWR, and 0.7 dB insertion loss. Operating from 0-8000 MHz, it's ideal for reflective port termination applications in RF/Microwave systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,382 parts In-Stock

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Digiode

USA . 1,825 parts In-Stock

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1,825

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Distributors (Availability)

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Parana Technologies

USA . 320 parts In-Stock

1+ parts

$1.133

100+ parts

$105.213

1k+ parts

$1.020

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320

$1.133

$105.213

$1.020

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DigiPath Technology Company

USA . 1,550 parts In-Stock

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$1.248

100+ parts

$1.148

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$1.248

$1.148

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IDEA Electronic Components Group

UK . 940 parts In-Stock

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$1.273

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$1.146

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940

$1.273

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$1.146

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ChromeModa Solutions

Germany . 797 parts In-Stock

1+ parts

$1.273

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$1.044

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797

$1.273

$1.044

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AZTECH Wire

Italy . 512 parts In-Stock

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$15.693

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512

$15.693

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Semicontronic

India . 1,022 parts In-Stock

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$20.000

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$19.500

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$19.400

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One Stop Electronics

USA . 665 parts In-Stock

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$21.000

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665

$21.000

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Ampacity Inc.

Singapore . 1,065 parts In-Stock

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$33.000

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Corphita

USA . 540 parts In-Stock

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Corohmni

South Africa . 193 parts In-Stock

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Overview

Elevate your RF/Microwave systems with the TGS8706-SCC by Texas Instruments. Known for their superior quality and innovation, Texas Instruments delivers top-notch RF/Microwave Switches that offer unmatched performance and reliability. The TGS8706-SCC is perfect for a variety of applications, providing seamless switching capabilities without compromising on signal integrity. Experience the value and benefits of this state-of-the-art SPDT switch, designed to optimize your system's efficiency and functionality. Trust in Texas Instruments to elevate your RF/Microwave experience.

Feature Benefit Bullets

Maximum Input Power (CW): 33.01 dBm

The high maximum input power capability ensures that the switch can handle strong signals without being damaged, making it a reliable choice for high-power applications.

Maximum Voltage Standing Wave Ratio: 1.1

With a low VSWR of 1.1, this switch provides excellent impedance matching and reduces signal reflections, resulting in superior signal quality and reliability.

Maximum Insertion Loss: 0.7 dB

The low insertion loss of 0.7 dB minimizes signal loss when the switch is engaged, ensuring efficient and accurate signal transmission.

Technology: GAAS

Utilizing Gallium Arsenide technology ensures high performance, reliability, and efficiency in RF/microwave applications.

RF or Microwave Device Type: SPDT

Being a Single-Pole Double-Throw switch allows for versatile signal routing options, making it suitable for a variety of RF/microwave systems.

Minimum Operating Frequency: 0 MHz

The wide frequency range starting from 0 MHz makes this switch versatile and suitable for a wide range of RF/microwave applications.

Maximum Operating Frequency: 8000 MHz

With a high maximum operating frequency of 8000 MHz, this switch can handle high-frequency signals, making it ideal for a range of RF/microwave systems.

Port Termination: REFLECTIVE

The reflective port termination helps in minimizing signal reflections and maintaining signal integrity, ensuring reliable performance in RF/microwave systems.

Technical Specifications

RF/Microwave Switches TGS8706-SCC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Maximum Input Power (CW):

33.01 dBm

Maximum Insertion Loss:

.7 dB

No. of Functions:

1

Maximum Operating Frequency:

8000 MHz

Minimum Operating Frequency:

0 MHz

Package Equivalence Code:

DIE OR CHIP

Port Termination:

REFLECTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.1

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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