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TGS8122XCMX

Texas Instruments

TGS8122XCMX by Texas Instruments

TGS8122XCMX by Texas Instruments is an RF/Microwave SPDT switch with max input power of 34.77 dBm, VSWR of 1.2, and insertion loss of 1.4 dB. Ideal for applications requiring frequency range from 8-11 GHz due to its high performance and reliability in RF systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,837 parts In-Stock

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Digiode

USA . 3,150 parts In-Stock

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3,150

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Parana Technologies

USA . 664 parts In-Stock

1+ parts

$1.110

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-

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$1.942

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664

$1.110

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$1.942

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DigiPath Technology Company

USA . 741 parts In-Stock

1+ parts

$1.222

100+ parts

$1.124

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-

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741

$1.222

$1.124

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ChromeModa Solutions

Germany . 3,420 parts In-Stock

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$1.247

100+ parts

$1.023

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3,420

$1.247

$1.023

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IDEA Electronic Components Group

UK . 88 parts In-Stock

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$1.247

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$1.122

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88

$1.247

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$1.122

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One Stop Electronics

USA . 1,076 parts In-Stock

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$4.000

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1,076

$4.000

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Ampacity Inc.

Singapore . 532 parts In-Stock

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$8.000

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532

$8.000

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AZTECH Wire

Italy . 891 parts In-Stock

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$10.117

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891

$10.117

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Semicontronic

India . 492 parts In-Stock

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$24.000

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$23.400

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$23.280

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492

$24.000

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$23.280

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Corphita

USA . 4,453 parts In-Stock

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Corohmni

South Africa . 57 parts In-Stock

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Overview

Unleash the power of seamless connectivity with the TGS8122XCMX by Texas Instruments. Crafted with precision and expertise, this RF/Microwave Switch offers unparalleled performance, reliability, and versatility. Whether you're optimizing network efficiency or enhancing communication systems, this SPDT switch ensures smooth operation with minimal insertion loss and maximum input power. Elevate your projects and exceed expectations with the superior quality and innovation that Texas Instruments is known for. Experience seamless integration and unlock endless possibilities with the TGS8122XCMX.

Feature Benefit Bullets

Maximum Input Power (CW) 34.77 dBm

With a high maximum input power rating, this switch can handle high power levels without degradation, making it suitable for demanding applications.

Maximum Voltage Standing Wave Ratio 1.2

A low VSWR of 1.2 indicates good impedance matching and minimal signal reflection, ensuring efficient power transfer and signal integrity.

Construction

Being a component-level switch allows for flexibility in integration and customization within RF/Microwave systems to meet specific requirements.

Maximum Insertion Loss 1.4 dB

With a low insertion loss, this switch minimizes signal attenuation and maintains signal strength, crucial for maintaining system performance.

RF or Microwave Device Type SPDT

As a Single-Pole Double-Throw (SPDT) switch, it provides switching between two paths, offering design versatility and signal routing capabilities.

Minimum Operating Frequency 8000 MHz

With a low minimum operating frequency of 8000 MHz, this switch is suitable for a wide range of RF/Microwave applications, including high-frequency systems.

Maximum Operating Frequency 11000 MHz

The high maximum operating frequency of 11000 MHz makes this switch ideal for high-frequency RF/Microwave applications, providing reliable performance in such systems.

Technical Specifications

RF/Microwave Switches TGS8122XCMX attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Construction:

COMPONENT

Maximum Input Power (CW):

34.77 dBm

Maximum Insertion Loss:

1.4 dB

Maximum Operating Frequency:

11000 MHz

Minimum Operating Frequency:

8000 MHz

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.2

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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