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TGS8630-SCC

Texas Instruments

TGS8630-SCC by Texas Instruments

TGS8630-SCC by Texas Instruments is a GAAS SPDT RF switch with 15 dBm compression point, 12V power supply, and 0.014 us nominal on time. It operates up to 12 GHz and features reflective port termination, suitable for high-frequency RF/microwave applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,902 parts In-Stock

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5,902

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Digiode

USA . 75 parts In-Stock

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75

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Distributors (Availability)

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Parana Technologies

USA . 1,099 parts In-Stock

1+ parts

$0.795

100+ parts

-

1k+ parts

$1.777

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1,099

$0.795

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$1.777

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DigiPath Technology Company

USA . 1,596 parts In-Stock

1+ parts

$0.875

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1,596

$0.875

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ChromeModa Solutions

Germany . 939 parts In-Stock

1+ parts

$0.893

100+ parts

$0.732

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939

$0.893

$0.732

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IDEA Electronic Components Group

UK . 900 parts In-Stock

1+ parts

$0.893

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$0.804

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900

$0.893

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$0.804

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Semicontronic

India . 1,125 parts In-Stock

1+ parts

$3.000

100+ parts

$2.925

1k+ parts

$2.910

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1,125

$3.000

$2.925

$2.910

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One Stop Electronics

USA . 665 parts In-Stock

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$19.000

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665

$19.000

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AZTECH Wire

Italy . 280 parts In-Stock

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$19.333

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280

$19.333

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Ampacity Inc.

Singapore . 328 parts In-Stock

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$27.000

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$27.000

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Corphita

USA . 2,570 parts In-Stock

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Corohmni

South Africa . 428 parts In-Stock

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Overview

Experience seamless performance and superior quality with the TGS8630-SCC by Texas Instruments. As a leader in RF/Microwave Switches, Texas Instruments delivers unmatched reliability and precision. This product offers unparalleled value to customers seeking high-performance solutions for their applications. With a compression point of 15 dBm and a maximum operating frequency of 12 GHz, the TGS8630-SCC ensures optimal functionality and efficiency. Trust Texas Instruments to provide cutting-edge technology for all your RF/Microwave needs.

Feature Benefit Bullets

Compression Point (1 dB): 15 dBm

The high compression point of 15 dBm ensures that the switch can handle high power levels without deteriorating performance, making it suitable for demanding RF/microwave applications.

Power Supplies (V): 12

Operating at a standard 12V power supply simplifies integration into existing systems and ensures compatibility with common power sources.

Nominal On Time: 0.014 us

With a fast switching time of 0.014 microseconds, this switch can quickly respond to changes in RF/microwave signals, enabling seamless signal switching in high-speed applications.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology enhances the switch's performance, providing high-frequency capability and low noise figure for superior RF/microwave signal handling.

RF or Microwave Device Type: SPDT

Being a Single Pole Double Throw (SPDT) switch allows for switching between two signal paths, providing flexibility in signal routing and enabling various RF/microwave configurations.

Maximum Operating Frequency: 12000000 MHz

Supporting a high operating frequency of 12 GHz makes this switch suitable for a wide range of RF/microwave applications, including high-frequency communication systems and radar systems.

Port Termination: REFLECTIVE

The reflective port termination minimizes signal loss and ensures efficient signal reflection, maintaining signal integrity in RF/microwave systems and applications.

Technical Specifications

RF/Microwave Switches TGS8630-SCC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Compression Point (1 dB):

15 dBm

No. of Functions:

1

Nominal On Time:

.014 us

Maximum Operating Frequency:

12000000 MHz

Package Equivalence Code:

DIE OR CHIP

Port Termination:

REFLECTIVE

Power Supplies (V):

12

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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