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TGS8250XCCX

Texas Instruments

TGS8250XCCX by Texas Instruments

TGS8250XCCX by Texas Instruments is an RF/Microwave SPDT switch with 30 dBm CW power, 1.5 VSWR, and 2.7 dB insertion loss. Ideal for applications requiring frequency range of 0-18000 MHz, such as telecommunications and radar systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,219 parts In-Stock

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7,219

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Digiode

USA . 1,496 parts In-Stock

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1,496

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 245 parts In-Stock

1+ parts

$1.237

100+ parts

-

1k+ parts

$2.016

10k+ parts

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245

$1.237

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$2.016

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DigiPath Technology Company

USA . 1,149 parts In-Stock

1+ parts

$1.362

100+ parts

$1.253

1k+ parts

-

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1,149

$1.362

$1.253

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IDEA Electronic Components Group

UK . 1,677 parts In-Stock

1+ parts

$1.390

100+ parts

-

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$1.251

10k+ parts

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1,677

$1.390

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$1.251

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ChromeModa Solutions

Germany . 1,624 parts In-Stock

1+ parts

$1.390

100+ parts

$1.140

1k+ parts

-

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1,624

$1.390

$1.140

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Semicontronic

India . 1,133 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

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1,133

$2.000

$1.950

$1.940

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Ampacity Inc.

Singapore . 418 parts In-Stock

1+ parts

$7.000

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418

$7.000

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AZTECH Wire

Italy . 518 parts In-Stock

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$8.648

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518

$8.648

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One Stop Electronics

USA . 322 parts In-Stock

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$16.000

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322

$16.000

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Corphita

USA . 1,297 parts In-Stock

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1,297

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Corohmni

South Africa . 361 parts In-Stock

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361

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Overview

Elevate your RF/Microwave applications with the TGS8250XCCX by Texas Instruments. Crafted with precision and quality, this SPDT switch offers a maximum input power of 30 dBm and a low insertion loss of 2.7 dB. Perfect for a wide range of frequency bands, from 0 MHz to 18000 MHz, this component guarantees reliable performance. Whether you're in the aerospace, defense, or telecommunications industry, this versatile switch provides exceptional value and benefits for your projects. Upgrade your systems today with Texas Instruments' trusted technology.

Feature Benefit Bullets

Maximum Input Power (CW): 30 dBm

With a maximum input power of 30 dBm, this RF/Microwave switch can handle high power levels without any risk of damage, making it a reliable choice for demanding applications.

Maximum Voltage Standing Wave Ratio: 1.5

The low maximum VSWR of 1.5 indicates excellent impedance matching and signal transfer efficiency, ensuring minimal signal loss and high performance of the switch.

Construction: COMPONENT

Being constructed as a component indicates high quality and reliability, making this RF/Microwave switch a durable and long-lasting choice for various applications.

Maximum Insertion Loss: 2.7 dB

With a low maximum insertion loss of 2.7 dB, this switch ensures minimal signal attenuation and maximum signal integrity, resulting in high performance and accuracy.

RF or Microwave Device Type: SPDT

The SPDT configuration of this switch allows for single-pole double-throw operation, offering versatility and flexibility in signal routing and switching, making it suitable for a wide range of applications.

Minimum Operating Frequency: 0 MHz

With a starting frequency of 0 MHz, this RF/Microwave switch can handle a wide range of frequencies, making it suitable for diverse applications and signal types.

Maximum Operating Frequency: 18000 MHz

With a high maximum operating frequency of 18000 MHz, this switch can accommodate a broad spectrum of RF and microwave signals, making it versatile and adaptable for various communication and testing needs.

Technical Specifications

RF/Microwave Switches TGS8250XCCX attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

2.7 dB

Maximum Operating Frequency:

18000 MHz

Minimum Operating Frequency:

0 MHz

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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