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TGS8250-SCC

Texas Instruments

TGS8250-SCC by Texas Instruments

TGS8250-SCC by Texas Instruments is a GAAS SPDT RF switch with 30 dBm CW power handling, VSWR of 1.5, and frequency range up to 18 GHz. Ideal for reflective port termination applications in RF/Microwave systems, operating b/w 0°C to 70°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,146 parts In-Stock

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Digiode

USA . 514 parts In-Stock

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514

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Parana Technologies

USA . 2,021 parts In-Stock

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$1.771

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$2.337

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2,021

$1.771

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$2.337

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ChromeModa Solutions

Germany . 1,205 parts In-Stock

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$1.990

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$1.632

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$1.990

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IDEA Electronic Components Group

UK . 735 parts In-Stock

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$1.990

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$1.791

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735

$1.990

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Ampacity Inc.

Singapore . 1,400 parts In-Stock

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$7.000

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$7.000

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AZTECH Wire

Italy . 773 parts In-Stock

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$8.907

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773

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Semicontronic

India . 1,989 parts In-Stock

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$20.000

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$19.500

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$19.400

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One Stop Electronics

USA . 556 parts In-Stock

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$38.000

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DigiPath Technology Company

USA . 1,618 parts In-Stock

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$1.794

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Corphita

USA . 427 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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Overview

Unleash the power of seamless connectivity with the TGS8250-SCC RF/Microwave Switch from Texas Instruments. Known for their unparalleled quality and innovative technology, Texas Instruments delivers a cutting-edge solution designed to meet your communication needs. Whether you're in need of reliable signal switching for test and measurement applications or seeking to enhance your wireless communication systems, this SPDT switch offers unmatched performance and precision. Elevate your projects with the TGS8250-SCC and experience the value and benefits of top-notch engineering at your fingertips.

Feature Benefit Bullets

Maximum Input Power (CW): 30 dBm

With a high maximum input power handling capability of 30 dBm, this RF/Microwave switch is suitable for applications where there is a need to handle moderate power levels without experiencing damage.

Maximum Voltage Standing Wave Ratio: 1.5

The low maximum VSWR of 1.5 indicates good impedance matching and signal transfer efficiency, ensuring minimal signal reflections and loss, making it a reliable choice for high-performance RF and microwave systems.

Construction: COMPONENT

Being a component-level RF/Microwave switch, it allows for easy integration into existing systems or circuit designs, providing flexibility and customization options for specific application requirements.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this RF/Microwave switch can withstand elevated temperatures without compromising performance, making it suitable for a wide range of operating environments.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0°C ensures reliable operation even in cold conditions, adding to the versatility and durability of this RF/Microwave switch.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology, this RF/Microwave switch offers high performance, low noise figure, and excellent linearity, making it a preferred choice for demanding RF and microwave applications.

RF or Microwave Device Type: SPDT

As a Single-Pole Double-Throw (SPDT) switch, this device provides versatility in routing signals between two different paths, offering flexibility and control in signal switching applications.

Minimum Operating Frequency: 0 MHz

With a minimum operating frequency of 0 MHz, this RF/Microwave switch can handle a wide range of frequency signals, making it suitable for diverse RF and microwave applications.

Maximum Operating Frequency: 18000 MHz

The high maximum operating frequency of 18000 MHz allows this RF/Microwave switch to support a broad range of RF and microwave signals, making it versatile for various communication and wireless systems.

Port Termination: REFLECTIVE

Featuring reflective port termination, this RF/Microwave switch enables signal reflection back to the source, enhancing signal integrity, isolation, and system performance in high-frequency applications.

Technical Specifications

RF/Microwave Switches TGS8250-SCC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

No. of Functions:

1

Maximum Operating Frequency:

18000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Equivalence Code:

DIE OR CHIP

Port Termination:

REFLECTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.5

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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